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Hamamatsu Photonics HAMAMATSU[Hamamatsu Corporation]
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Part No. |
J5022-16 J5022-19 J5022-01 J5022-09 J5022-11 J5022-21
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OCR Text |
... 1.0 1.0 0.4 1.0 1.0 1.0
L/D 83 167 40 100 40 50
HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205, Telex: 422... |
Description |
CAPILLARY PLATE
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File Size |
27.28K /
1 Page |
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Advanced Power Electron...
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Part No. |
AP85T10AGP-HF-16
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OCR Text |
... - ns t f fall time v gs =10v - 83 - ns c iss input capacitance v gs =0v - 6900 11040 pf c oss output capacitance v ds =25v - 650 - pf c rss...16 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 9.0v 8.0v 7.0v v g =... |
Description |
Fast Switching Characteristic
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File Size |
53.32K /
5 Page |
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it Online |
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ST Microelectronics
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Part No. |
SD1407-16
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OCR Text |
...64 24.89 0.970 0.980 g 12.57 12.83 0.495 0.505 h 0.08 0.18 0.003 0.007 i 2.29 2.79 0.090 0.110 j 4.06 4.45 0.160 0.175 k 7.11 0.280 l 26.67 1.050
sd1407 6/7 revision history table 8. revision history date revision description of changes o... |
Description |
HF SSB APPLICATIONS RF & MICROWAVE TRANSISTORS
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File Size |
100.72K /
7 Page |
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it Online |
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Advanced Power Electron...
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Part No. |
AP94T07GP-HF-16
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OCR Text |
... recovery charge di/dt=100a/s - 83 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.package limitation curren...16.0 20.0 24.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 9.0v 8.0... |
Description |
Fast Switching Characteristic
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File Size |
48.17K /
5 Page |
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Minmax Technology Co., ...
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Part No. |
MAU300-16
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OCR Text |
... 39 0# 7 7 mau 306 12 83 1.5 504 7 7 9 mau 307 1 5 66 1 501 7 79 mau 3 11 12 (10.8 ~ 13.2) 3.3 50 0 10 185 30 8 470 74 mau 3 12 5 40 0 8 212 8 78 mau 313 12 165 ... |
Description |
DC/DC CONVERTER 2W, SIP-Package
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File Size |
565.18K /
4 Page |
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Infineon Technologies A...
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Part No. |
IPD50R800CE-16
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OCR Text |
...e energy, single pulse e as - - 83 mj i d =1.9a; v dd = 50v avalanche energy, repetitive e ar - - 0.13 mj i d =1.9a; v dd = 50v avalanch...16 18 20 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs typ.out... |
Description |
500V CoolMOSa CE Power Transistor
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File Size |
1,180.94K /
13 Page |
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it Online |
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Price and Availability
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