64m bit 2 7-volt page mode fla pdf Datasheet P9 Description --- IC-ON-LINE


	Part Number	Hot Search : RF1304 PC3500 ST72324 87FE52AE STI5107 SML60H20 XC2765X LM321
	Product Description
	Full Text Search

64m bit 2 7-volt page mode fla Datasheet PDF File

For 64m bit 2 7-volt page mode fla Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |

				SPANSION
Part No.	S29PL129N70FFW002 S29PL127N65GFIW02
Description	256/128/128 Mb (16/8/8 M x 16-bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, page-mode flash Memory
File Size	985.63K / 85 Page	View it Online	Download Datasheet

				AMD Inc
Part No.	AM41PDS3228D
Description	32 Mbit (2 M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Operation page mode flash Memory and 8 Mbit From old datasheet system
File Size	547.29K / 58 Page	View it Online	Download Datasheet

				SPANSION
Part No.	S29PL129N70GAIW02 S29PL129N80FAIW03 S29PL129N80FAWW03 S29PL129N80FFI003 S29PL129N80FFWW03 S29PL129N80FAIW02 S29PL129N80FAWW02 S29PL129N80FFI002 S29PL129N80FFWW02
Description	256/128/128 Mb (16/8/8 M x 16-bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, page-mode flash Memory 256/128/128 Mb (16/8/8 M x 16-bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, page-mode flash Memory
File Size	1,002.33K / 85 Page	View it Online	Download Datasheet

				SPANSION
Part No.	29PL256N S29PL127N65GAW003 S29PL127N65GAWW00 S29PL127N65GAWW02 S29PL127N65GAWW03 S29PL127N65GFW003 S29PL129N S29PL256N65GFW000 S29PL127N70GFW002
Description	256/128/128 Mb (16/8/8 M x 16-bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, page-mode flash Memory 256/128/128 Mb (16/8/8 M x 16-bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, page-mode flash Memory
File Size	2,005.68K / 74 Page	View it Online	Download Datasheet

				SPANSION[SPANSION] AMD[Advanced Micro Devices]
Part No.	AM29PDL129H5VKI AM29PDL129H8VKI AM29PDL129H6VKI PD129H88VI AM29PDL129H PD129H53VI PD129H63VI PD129H68VI AM29PDL129H63VKI AM29PDL129H63 AM29PDL129H63VKIN AM29PDL129H68 AM29PDL129H68VKI AM29PDL129H68VKIN AM29PDL129H53 AM29PDL129H53VKI AM29PDL129H53VKIN AM29PDL129H88VKIN AM29PDL129H88 AM29PDL129H88VKI
Description	128 Megabit (8 M x 16-bit) CMOS 3.0 Volt-only, page mode Simultaneous Read/Write flash Memory with Enhanced VersatileIO Control and Dual chip Enable
File Size	345.49K / 49 Page	View it Online	Download Datasheet

				Spansion Inc. Spansion, Inc. SPANSION LLC
Part No.	S29GL064m90FBIR00 S29GL064m90FCIR02 S29GL064m90FCIR03 S29GL064m90FCIR10 S29GL064m90FCIR12 S29GL064m90FCIR13 S29GL064m90FCIR20 S29GL256M10TAIR13 S29GL064m90TDIR13 S29GL064m90TDIR00 S29GL064m90TDIR02 S29GL064m90TDIR03 S29GL064m90TDIR10 S29GL064m90TDIR12 S29GL064m90FDIR33 S29GL064m90TBIR33 S29GL064m90TBIR32 S29GL064m90TFIR23 S29GL256M10TFIR23 S29GL064m90BCIR13 S29GL064m90BDIR10 S29GL064m90BDIR12 S29GL064m90FBIR20 S29GL064m90BDIR22 S29GL064m90FBIR22 S29GL064m90FDIR03 S29GL064m90BDIR33 S29GL064m90BDIR02 S29GL064m90BDIR32 S29GL064m90BDIR23 S29GL064m90TBIR22 S29GL064m90TBIR23 S29GL064m90TCIR20 S29GL064m90TBIR10 S29GL064m90BFIR10 S29GL064m90BFIR20 S29GL128M90TDIR82 S29GL064m90FAIR12 S29GL064m90FAIR10 S29GL128M90TFIR82 S29GL256M10TAIR20 S29GL128M90TAIR13 S29GL128M90TDIR12 S29GL128M90TAIR10 S29GL128M90FDIR22 S29GL064m90BCIR23 S29GL064m90FBIR03 S29GL256M10TFIR20 S29GL064m90BFIR00 S29GL064m90BDIR13 S29GL064m90TDIR22 SPANSIONINC.-S29GL064m90BFIR10 SPANSIONLLC-S29GL064m90TBIR20 S29GL064m90FFIR23 SPANSIONLLC-S29GL064m90FFIR32
Description	MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2) MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L) MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P 3.0 Volt-only page mode flash Memory featuring 0.23 um Mirrorbit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的Mirrorbit 3.0 Volt-only page mode flash Memory featuring 0.23 um Mirrorbit process technology 4M X 16 flaSH 3V PROM, 90 ns, PDSO48 3.0 Volt-only page mode flash Memory featuring 0.23 um Mirrorbit process technology 4M X 16 flaSH 3V PROM, 90 ns, PBGA64 3.0 Volt-only page mode flash Memory featuring 0.23 um Mirrorbit process technology 16M X 16 flaSH 3V PROM, 100 ns, PDSO56 3.0 Volt-only page mode flash Memory featuring 0.23 um Mirrorbit process technology 8M X 16 flaSH 3V PROM, 90 ns, PDSO56 3.0 Volt-only page mode flash Memory featuring 0.23 um Mirrorbit process technology 8M X 8 flaSH 3V PROM, 90 ns, PBGA63 MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
File Size	2,173.74K / 160 Page	View it Online	Download Datasheet

				Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
Part No.	SST29EE020-120-4C-WH SST29LE020-250-4C-U2 SST29VE020-250-4C-U2 SST29EE020-150-4C-U2 SST29EF010-200-4C-EH SST29LE020-200-4C-EH SST29VF010-200-4C-EH SST29VE020-200-4I-WH SST29VF010-200-4I-PH SST29LF010-200-4I-WH SST29LF010-200-4C-EH SST29VF010-200-4C-NH SST29LF010-200-4I-PH SST29EF010-200-4I-WH SST29EF010-200-4C-NH SST29VE020-200-4C-EH SST29VF010-200-4C-PH SST29LF010-200-4I-EH SST29VF010-200-4I-EH SST29EF010-200-4I-PH SST29EF010-200-4C-PH SST29LF010-200-4C-PH SST29LF010-200-4C-NH SST29VF010-200-4I-WH SST29EF010-200-4I-EH SST29LF010-250-4I-PH SST29LF010-150-4I-PH SST29VF010-250-4I-PH SST29EF010-150-4I-PH SST29VF010-150-4I-PH SST29EF010-250-4I-PH SST29VF010-120-4I-NH SST29LF010-120-4C-WH SST29EF010-120-4I-NH SST29VF010-120-4C-EH SST29VF010-120-4I-PH SST29EF010-120-4C-EH SST29EE020-120-4I-NH SST29LF010-120-4I-NH SST29LF010-120-4C-PH SST29EF010-120-4C-WH SST29VF010-120-4C-WH SST29LF010-120-4C-EH SST29LF010-120-4I-PH SST29VF010-120-4C-PH SST29LF010-120-4I-WH SST29EF010-120-4I-PH SST29VF010-120-4I-WH SST29EF010-120-4I-WH SST29EF010-150-4C-EH SST29LF010-150-4C-EH SST29EF010-250-4C-EH SST29LF010-250-4C-EH SST29EF010-150-4I-EH SST29EF010-250-4I-EH SST29LF010-150-4I-EH SST29LF010-250-4C-PH SST
Description	7.3728MHZ CRYSTAL -40/85''C FLUKE-741B 120 REFURBISHED BY NEWARK KJA 79C 79#22 PIN RECP 128Kx8 EEPROM PSoC® Mixed-Signal Array 2 Mbit (256K x8) page-mode EEPROM 2兆位256K × 8）页模式的EEPROM 2 Mbit (256K x8) page-mode EEPROM 2兆位256K × 8）页模式EEPROM DSUB 13X3 F PCR/A G 50OHM T 2兆位56K × 8）页模式的EEPROM IC SMD AN2135SC CONTROLLER USB 256K X 8 EEPROM 5V, 120 ns, PDSO32 2 Mbit (256K x8) page-mode EEPROM 2兆位56K × 8）页模式的EEPROM 2 Mbit (256K x8) page-mode EEPROM 2兆位56K × 8）页模式EEPROM
File Size	315.19K / 26 Page	View it Online	Download Datasheet

				Winbond
Part No.	W29GL064CL7S W29GL064CH7S
Description	64m-bit 3.0-VOLT PARALLEL flaSH MEMORY WITH page mode
File Size	847.55K / 68 Page	View it Online	Download Datasheet

				Winbond
Part No.	W29GL032CH7S
Description	32M-bit 3.0-VOLT PARALLEL flaSH MEMORY WITH page mode
File Size	660.76K / 68 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	M5M44400AWJ M5M44400ATP M5M44400ART M5M44400AL M5M44400A M5M44400A-6 M5M44400A-6L M5M44400A-7 M5M44400A-7L M5M44400A-8 M5M44400A-8L M5M44400AJ
Description	FAST page mode 4194304 bit DYNAMIC RAM 快速页面模194304位动态随机存储器 From old datasheet system (J/L/TP/RT) Fast page mode 4Mbit DRAM
File Size	1,341.49K / 20 Page	View it Online	Download Datasheet

For 64m bit 2 7-volt page mode fla Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |

▲Up To Search▲

Price and Availability