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Advanced Power Electronics Corp.
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Part No. |
AP9579GJ-HF AP9579GJ-HF14
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OCR Text |
..., i d =-20a - - 25 m ? v gs =-4.5v, i d =-15a - - 30 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-20a - 36 - s i dss drain-source leakage current v ds =-48v, v gs =0v... |
Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance 45 A, 60 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
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File Size |
90.61K /
4 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
AOD200
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OCR Text |
5v) < 11m w symbol v ds v v 20 gate-source voltage drain-source voltage 30 the aod200 uses trench mosfet technology that is uniquely optimiz...20a gate source charge gate drain charge total gate charge reverse transfer capacitance switching pa... |
Description |
30V N-Channel MOSFET
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File Size |
298.46K /
6 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
AOL1426
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OCR Text |
... r ds(on) < 13.5m (v gs = 4.5v) the aol1426 uses advanced trench technology to provide excellent r ds(on) , low gate charge.this device ...20a v gs =10v v gs =4.5 5 10 15 20 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source ... |
Description |
N-Channel Enhancement Mode Field
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File Size |
533.23K /
6 Page |
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Alpha
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Part No. |
AOL1424
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OCR Text |
...v) r ds(on) < 8m ? (v gs = 4.5v) esd protected uis tested! ...20a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v ... |
Description |
N-Channel Enhancement Mode Field Effect Transistor N沟道增强型场效应
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File Size |
117.09K /
5 Page |
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Alpha
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Part No. |
AOL1420L
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OCR Text |
... r ds(on) < 5.5m ? (v gs = 4.5v) general description the aol1420 uses advanced trench technology to provide excellent r ds(on) , low gat...20a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v ... |
Description |
N-Channel Enhancement Mode Field Effect Transistor N沟道增强型场效应
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File Size |
118.44K /
5 Page |
View
it Online |
Download Datasheet
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Price and Availability
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