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SAMSUNG[Samsung semiconductor]
Samsung Electronics
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| Part No. |
K5D5657DCM-F015 K5D5657DCM-F0CL
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| OCR Text |
...banks. In 256Mbit NAND Flash, a 528-byte page program can be typically achieved within 200us and an 16K-Byte block erase can be typically achieved within 2ms. In serial read operation, a byte can be read by 50ns. DQ pins serve as the ports ... |
| Description |
MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM
MCP / 256Mb NAND and 256Mb Mobile SDRAM
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| File Size |
1,288.81K /
74 Page |
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it Online |
Download Datasheet
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Atmel
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| Part No. |
AT45BR3214B
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| OCR Text |
...rase and program) ? 8192 pages (528 bytes/page) main memory supports page and block erase operations two 528-byte sram data buffers ? allows receiving of data while reprogramming of nonvolatile memory continuous read capability throu... |
| Description |
32MB DataFlash 4MB SRAM Stack Memory.
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| File Size |
274.95K /
40 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
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| Part No. |
K9K1208U0M-YIB0 K9K1208U0M-YCB0
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| OCR Text |
... program operation programs the 528- byte page in typically 200 m s and an erase operation can be per- formed in typically 2ms on a 16k-byte block. data in the page can be read out at 60ns cycle time per byte. the i/o pins serve as the port... |
| Description |
64M x 8 Bit NAND Flash Memory 6400 × 8位NAND闪存
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| File Size |
357.11K /
26 Page |
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it Online |
Download Datasheet |
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Price and Availability
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