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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TIM5359-45SL
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| OCR Text |
...e Carrier Level HIGH POWER P1dB=46.5dBm at 5.3GHz to 5.9GHz HIGH GAIN G1dB=9.0dB at 5.3GHz to 5.9GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS Output Power at 1dB Gain Co... |
| Description |
MICROWAVE SEMICONDUCTOR
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| File Size |
110.62K /
4 Page |
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it Online |
Download Datasheet
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TIM6472-45SL
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| OCR Text |
...ERMETICALLY SEALED PACKAGE P1dB=46.5dBm at 6.4GHz to 7.2GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power ... |
| Description |
MICROWAVE POWER GaAs FET
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| File Size |
506.76K /
4 Page |
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it Online |
Download Datasheet |
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Intel
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| Part No. |
MA80C196KB MQ80C196KB
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| OCR Text |
... hs0.3 44 hs0.2 45 t2up-dn/p2.6 46 p1.7 pga signal 47 p1.6 48 p1.5 49 hso.1 50 hso.0 51 hso.5/hsi.3 52 hso.4/hsi.2 53 hsi.1 54 hsi.0 55 p1.4 56 p1.3 57 p1.2 58 p1.1 59 p1.0 60 txd/p2.0 61 rxd/p2.1 62 reset 63 extint/p2.2 64 v ss 65 v ref 66... |
| Description |
16-bit high performance CHMOS microcontroller
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| File Size |
389.26K /
30 Page |
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it Online |
Download Datasheet |
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Price and Availability
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