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  318e-04 Datasheet PDF File

For 318e-04 Found Datasheets File :: 270    Search Time::0.953ms    
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    ONSEMI[ON Semiconductor]
Part No. NJT4030P07 NJT4030PT3G NJT4030P NJT4030PT1G
OCR Text ...MARKING DIAGRAM SOT-223 CASE 318E STYLE 1 1 A Y W 4030P G AYW 4030PG = Assembly Location Year = Work Week = Specific Device Code = ...04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 0.001 0.01 0.1 1 10 IB, BASE CURRENT (...
Description Bipolar Power Transistors

File Size 126.27K  /  6 Page

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    NTF6P02T3-D10 NTF6P02T3 NTF6P02T3G

ON Semiconductor
Part No. NTF6P02T3-D10 NTF6P02T3 NTF6P02T3G
OCR Text ...PD TJ, Tstg EAS SOT-223 CASE 318E STYLE 3 RqJL RqJA RqJA TL 15 71.4 160 260 C/W C A = Assembly Location Y = Year W = Work ...04 0.03 0.02 VGS = -4.5 V VGS = -2.5 V 0.15 ID = -6.0 A TJ = 25C 0.1 0.05 0 0 1...
Description Power MOSFET -10 Amps, -20 Volts P−Channel SOT−223

File Size 131.16K  /  6 Page

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    NCV8450 NCV8450STT3G

ON Semiconductor
Part No. NCV8450 NCV8450STT3G
OCR Text ...Device SOT-223 (TO-261) CASE 318E A Y W G = Assembly Location = Year = Work Week = Pb-Free Package (Note: Microdot may be in either...04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 1E+03 0.001 1E-06 PULSE TIME (s) Figure 21. Transien...
Description Self-Protected High Side Driver with Temperature and Current Limit

File Size 140.97K  /  9 Page

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    NSV60600MZ4T1G NSV60600MZ4T3G

ON Semiconductor
Part No. NSV60600MZ4T1G NSV60600MZ4T3G
OCR Text ...r ds(on) 50 m sot ? 223 case 318e style 1 marking diagram c 2, 4 b 1 e 3 top view pinout c ce b 4 123 pin assignment 1 60600 ayw a = as...04 0.01 0.1 10 10 1 0.1 0.01 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 1.2 h fe , dc current gain h fe , dc cu...
Description 60 V, 6.0 A, Low VCE(sat) PNP Transistor

File Size 128.59K  /  6 Page

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    MMFT2406T1 MMFT2406T MMFT2406T1_D ON2217

Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MMFT2406T1 MMFT2406T MMFT2406T1_D ON2217
OCR Text ... (R) 4 1 2 3 G S CASE 318e-04, STYLE 3 TO-261AA MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage -- Continuous Drain Current Total Power Dissipation @ TA = 25C(1) Derate a...
Description MEDIUM POWER TMOS FET 700 mA 240 VOLTS 0.7 A, 240 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
N-hannel Enhancement-ode Logic Level SOT23
From old datasheet system

File Size 87.87K  /  6 Page

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    BF721T1

Motorola Inc
Motorola, Inc
Part No. BF721T1
OCR Text ...c Watts C C 1 2 3 4 CASE 318e-04, STYLE 1 SOT-223 (TO-261AA) DEVICE MARKING DF THERMAL CHARACTERISTICS Characteristic Thermal Resistance from Junction to Ambient(1) Symbol RJA Max 83.3 Unit C/W ELECTRICAL CHARACTERISTICS (...
Description PNP SILICON TRANSISTOR SURFACE MOUNT

File Size 75.38K  /  4 Page

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    BF721T1 BF721T1_D ON0211

ON Semiconductor
Part No. BF721T1 BF721T1_D ON0211
OCR Text ...c Watts C C 1 2 3 4 CASE 318e-04, STYLE 1 SOT-223 (TO-261AA) DEVICE MARKING DF THERMAL CHARACTERISTICS Characteristic Thermal Resistance from Junction to Ambient(1) Symbol RJA Max 83.3 Unit C/W ELECTRICAL CHARACTERISTICS (...
Description From old datasheet system
PNP SILICON TRANSISTOR SURFACE MOUNT

File Size 104.33K  /  6 Page

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    ON Semi
Part No. BSP16T1_D ON0219
OCR Text ...c Watts C C 1 2 3 CASE 318e-04, STYLE 1 TO-261AA DEVICE MARKING BT2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Symbol RqJA Max 83.3 Unit C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless...
Description SOT-223 PACKAGE NPN SILICON
From old datasheet system

File Size 97.97K  /  6 Page

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    NVF6P02T3G

ON Semiconductor
Part No. NVF6P02T3G
OCR Text ...ring information sot ? 223 case 318e style 3 marking diagram & pin assignment http://onsemi.com ?for information on tape and reel specificat...04 410 8 6 0.03 1.0 t j = 100 c t j = 25 c i d = ? 6.0 a t j = 25 c v ds ? 10 v v gs =...
Description Power MOSFET -10 Amps, -20 Volts

File Size 109.19K  /  6 Page

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For 318e-04 Found Datasheets File :: 270    Search Time::0.953ms    
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