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WTE[Won-Top Electronics]
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| Part No. |
BAS70WS-T1 BAS40WS BAS40WS-T1 BAS70WS
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| OCR Text |
...on @ IR = 10A @ IF = 1.0mA, t < 300s @ IF = 10mA, t < 300s @ IF = 15mA, t < 300s @ VR = 50V, t < 300s VR = 0V, f = 1.0MHz IF = 10mA through IR = 10mA to IR = 1.0mA, RL = 100
Note: 1. Device on fiberglass substrate.
BAS70WS
1 of 3
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| Description |
SURFACE MOUNT SCHOTTKY BARRIER DIODE
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| File Size |
33.31K /
3 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDFC2P100
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| OCR Text |
...5V VGS = -2.0V PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX
-ID, DRAIN CURRENT (A)
5 4 3 2 1 0 0.0
VGS = -3.5V VGS = -3.0V
VGS = -2.5V
VGS = -2.0V PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX
0.5
1.0
1.5
2.0
2.5
5... |
| Description |
Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3A, 150mohm
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| File Size |
289.26K /
6 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDFS6N754
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| OCR Text |
...er 2: Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
3 FDFS6N754 Rev. A
www.fairchildsemi.com
FDFS6N754 Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode
Typical Characteristics TJ
20
ID, DRAIN CURRENT (A)
VGS... |
| Description |
Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 4A, 56mOHM
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| File Size |
323.42K /
7 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDM3300NZ_07 FDM3300NZ
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| OCR Text |
...
2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%.
FDM3300NZ Rev.F
2
www.fairchildsemi.com
FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwi... |
| Description |
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 10A, 23mヘ
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| File Size |
188.85K /
6 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDM6296_07 FDM6296
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| OCR Text |
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2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%.
FDM6296 Rev.E
2
www.fairchildsemi.com
FDM6296 Single N-Channel Logic-Level PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
VGS = 10V VGS ... |
| Description |
Single N-Channel Logic-Level PowerTrench㈢ MOSFET 30V,11.5A, 10.5mヘ
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| File Size |
182.83K /
6 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDMC5614P
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| OCR Text |
...
2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%.
FDMC5614P Rev.C
2
www.fairchildsemi.com
FDMC5614P P-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
NORMALIZED DRAIN TO SOURCE ON... |
| Description |
P-Channel PowerTrench MOSFET
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| File Size |
214.26K /
7 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDMS2572 FDMS257207
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| OCR Text |
...
2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%.
FDMS2572 Rev.C2
2
www.fairchildsemi.com
FDMS2572 N-Channel UltraFET Trench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
35
ID, DRAIN CURRENT (A)
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| Description |
N-Channel UltraFET Trench? MOSFET 150V, 27A, 47m
N-Channel UltraFET Trench㈢ MOSFET 150V, 27A, 47mз
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| File Size |
499.37K /
7 Page |
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it Online |
Download Datasheet |
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