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  25.600mhz Datasheet PDF File

For 25.600mhz Found Datasheets File :: 408    Search Time::2.734ms    
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NEC[NEC]
NEC Corp.
NEC, Corp.
Part No. MC-4R64CPE6C-845 MC-4R64CPE6C MC-4R64CPE6C-653 MC-4R64CPE6C-745
OCR Text ...f sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes). The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed memory transactions. The separate con...
Description DRAGONBALL MXL DIE SALE
Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT 直接Rambus的内存RIMM400模块技2M的字x 16

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NEC[NEC]
NEC Corp.
Part No. MC-4R96CEE6C-845 MC-4R96CEE6B MC-4R96CEE6B-653 MC-4R96CEE6B-745 MC-4R96CEE6B-845 MC-4R96CEE6C MC-4R96CEE6C-653 MC-4R96CEE6C-745
OCR Text ...f sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes). The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed memory transactions. The separate con...
Description Direct Rambus DRAM RIMM Module 96M-BYTE 48M-WORD x 16-BIT

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NEC[NEC]
NEC Corp.
NEC, Corp.
Part No. MC-4R96CPE6C-845 MC-4R96CPE6C MC-4R96CPE6C-653 MC-4R96CPE6C-745 NECCORP.-MC-4R96CPE6C-745
OCR Text ...f sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes). The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed memory transactions. The separate con...
Description Direct Rambus DRAM RIMM Module 96M-BYTE 48M-WORD x 16-BIT 直接Rambus的内存模9600 RIMM的技800字16
Direct Rambus DRAM RIMM Module 96M-BYTE 48M-WORD x 16-BIT 直接Rambus的内存模600 RIMM的技800字16

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    INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. HA7-2840883 FN3594 HA1-2840_883 HA1-2840883 HA7-2840_883 HA-2840883 HA-2840 HA-2840_883 HA-2840/883 HA1-2840/883 HA7-2840/883
OCR Text ...ils 1 mils 1650 x 1310 x 483m 25.4m METALLIZATION: Type: Al, 1% Cu Thickness: 16kA 2kA GLASSIVATION: Type: Nitride over Silox Silox Thickness: 12kA 2kA Nitride Thickness: 3.5kA 1.5kA WORST CASE CURRENT DENSITY: 1.3 x 105 A/cm2 at 3.4mA...
Description From old datasheet system
Very High Slew Rate Wideband Operational Amplifier
Very High Slew Rate/ Wideband Operational Amplifier
Very High Slew Rate, Wideband Operational Amplifier(高转换率、宽带运算放大器)
Very High Slew Rate, Wideband Operational Amplifier 甚高摆率,宽带运算放大器
Very High Slew Rate, Wideband Operational Amplifier OP-AMP, 6000 uV OFFSET-MAX, 500 MHz BAND WIDTH, CDIP14

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    HFA1112A HFA1112AIB HFA11XXEVAL HFA1112 HFA1112IB HFA1112IP

INTERSIL[Intersil Corporation]
Part No. HFA1112A HFA1112AIB HFA11XXEVAL HFA1112 HFA1112IB HFA1112IP
OCR Text ... TEMP (oC) MIN TYP MAX UNITS 25 Full 39 35 25 240 2.5 0.980 0.975 1.96 1.95 3.0 2.5 50 35 4.5 - 8 10 45 9 37 25 50 300 2 2.8 0.990 ...600MHz TRANSIENT CHARACTERISTICS Rise Time (VOUT = 0.5V Step, Note 2) AV = -1 AV = +1 AV = +2 25 25 ...
Description 850MHz. Low Distortion Programmable Gain Buffer Amplifier
850MHz, Low Distortion Programmable Gain Buffer Amplifiers
Buffer, Closed Loop, Programmable Gain ( /-1, 2), 850MHz, Video/RF, Optimized for Gain of 1

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    KSC2786 KSC2786OBU KSC2786YTA KSC2786OTA KSC2786RBU KSC2786RTA KSC2786YBU

FAIRCHILD[Fairchild Semiconductor]
Part No. KSC2786 KSC2786OBU KSC2786YTA KSC2786OTA KSC2786RBU KSC2786RTA KSC2786YBU
OCR Text ...fe - f Figure 16. yoe - f 25 100 GPE 20 VCE = 6 V f = 100 MHz VCE = 6 V IC = 1 mA gie [ms], CONDUCTANCE bie [ms], SUSCEPTANCE NF [dB], NOISE FIGURE GPE [dB], POWER GAIN 10 15 bie 10 1 gie 5 N...
Description NPN Epitaxial Silicon Transistor
TV PIF Amplifier/ FM Tuner RF Amplifier/ Mixer/ Oscillator
TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator

File Size 72.41K  /  7 Page

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    CXA2697ER

Sony Corporation
Sony Electronics
Part No. CXA2697ER
OCR Text ... 26 OUTENREF R FREQ1 16 25 VBG 17 LDOUT2 18 VCC2 19 VCC1 20 IIN5 21 IIN4 22 IIN3 23 IIN2 24 IIN1 -2- CXA2697ER Pin Description Pin No. 1 2 27 28 29 30 31 32 3 Symbol xOUTEN2 OUTEN2 xOUTEN5 OU...
Description 5-Channel 2-LD Driver For Optical Disc Drive

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    K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K4R271669B-NCK8 K4R441869B-NCK8 K4R271669B K4R271669B-MCG6 K4R271669B-MCK7 K4R271669B-MCK8 K4R441869B-MCG6 K4R441869B-MCK7 K4R441869B-MCK8 K4R441869B-NCG6 K4R441869B-NCK7 K4R441869B-NMCG6 K4R271869B-MCK8 K4R271869B-NCG6
OCR Text ...f sustained data transfers at 1.25 ns per two bytes (10ns per sixteen bytes). The architecture of the Direct RDRAMs allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. The separate contr...
Description 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.

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    KSC1674 KSC1674COTA KSC1674CYBU KSC1674CYTA KSC1674OTA KSC1674OBU KSC1674RBU KSC1674RTA KSC1674YBU KSC1674YTA

Fairchild Semiconductor, Corp.
Part No. KSC1674 KSC1674COTA KSC1674CYBU KSC1674CYTA KSC1674OTA KSC1674OBU KSC1674RBU KSC1674RTA KSC1674YBU KSC1674YTA
OCR Text ...nsions TO-92 4.58 -0.15 +0.25 0.46 14.47 0.40 0.10 4.58 0.20 1.27TYP [1.27 0.20] 3.60 0.20 1.27TYP [1.27 0.20] 0.38 -0.05 +0.10 3.86MAX 1.02 0.10 0.38 -0.05 +0.10 (R2.29) (0.25) Dimensions ...
Description NPN Epitaxial Silicon Transistor
TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92

File Size 39.88K  /  4 Page

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