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19625 Datasheet PDF File

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				ITT CANNON
Part No.	A51-428-3875220
OCR Text	...e straight right angle rg178/u, 196/u 1.25 + .02f 1.25 + .03f 1.20 + .02f 1.20 + .03f rg188/u, 316/u 1.30 + .02f 1.30 + .03f 1.25 + .03f 1.30 + .02f ssmb: initial = 26.7 n (6 lbs.) max. engagement and 8.9 n(2 lbs.) minimum disengagement. a...
Description	CABLE TERMINATED, FEMALE, SSMB CONNECTOR, CRIMP, PLUG
File Size	74.36K / 6 Page	View it Online	Download Datasheet

				HolyStone International
Part No.	RDH
OCR Text	...ucture & dimension 0.6 0.1 [0.196] 25.0+3/-1 [0.984] 5.0 1 [0.196] 4.0 [0.157] 8.0 [0.314] 7.5 [0.294] fd 0.6 0.1 [0.196] 25.0+3/-1 [0.984] 5.0 1 [0.196] 4.0 [0.157] 7.0 [0.275] 5.5 [0.216] ed 0.6 0.1 [0.196] 25.0+3/-1 [0.984] 6.54...
Description	Radial Dipped Ceramic Capacitors
File Size	548.38K / 4 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	GM71VS65163CL
OCR Text	196,304 WORDS x 16 BIT MOS DYNAMIC RAM Description The GM71V(S)65163C/CL is the new generation dynamic RAM organized 4,196,304 words by ...25 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 VSS IO15 IO14 IO13 IO1...
Description	(GM71VS65163CL / GM71V65163C) 4M x 16-Bit MOS DRAM
File Size	133.33K / 10 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	GM71VS65163AL
OCR Text	196,304 WORDS x 16 BIT CMOS DYNAMIC RAM Description The GM71V(S)65163A/AL is the new generation dynamic RAM organized 4,196,304 words by...25 50 49 48 47 46 45 44 43 42 41 40 39 38 VSS IO15 IO14 IO13 IO12 VSS IO11 IO10 IO9 IO8 NC VSS /LCAS...
Description	(GM71VS65163AL / GM71V65163A) 4M x 16-Bit CMOS DRAM
File Size	284.04K / 24 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	GM71V65163C
OCR Text	196,304 words x 16 bit mos dynamic ram description features * 4,196,304 words x 16 bit * extended data out (edo) mode capability * fa...25 30 90 110 20 25 13 15 t cac ( top view) 1 vcc 2 io0 3 io1 io2 4 5 io3 6 7 12 vcc 13 / we...
Description	(GM71VS65163CL / GM71V65163C) 4M x 16-Bit MOS DRAM
File Size	135.54K / 10 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology]
Part No.	APT6011B2VFR04 APT6011LVFR APT6011B2VFR
OCR Text	..._LVFR UNIT Volts Amps 600 49 196 30 40 625 5.00 -55 to 150 300 49 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current ...25, Peak IL = 49A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	145.86K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology]
Part No.	APT6011B2VR04 APT6011LVR APT6011B2VR
OCR Text	...R_LVR UNIT Volts Amps 600 49 196 30 40 625 5.00 -55 to 150 300 49 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current ...25 250 100 2 4 (VGS = 10V, ID = 24.5A) Ohms A nA Volts 5-2004 050-8059 Rev A Zero Gate Vol...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	144.08K / 4 Page	View it Online	Download Datasheet

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