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FJX3004R A143F AN316 1SM5925B VDP31XXB DL6144 54840 MN3209
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  15.000001 Datasheet PDF File

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    NSV60101DMTWTBG

ON Semiconductor
Part No. NSV60101DMTWTBG
OCR Text ...) 7 5 3 1 0 40 120 240 30 25 20 15 10 5 0 0 5 15 20 30 35 figure 11. f t , current gain bandwidth product figure 12. power derating i c , co...000001 0.1 1 10 100 r(t), effective transient thermal resistance ( c/w) 0.00001 0.0001 0.001 0.01 0...
Description 60 V, 1 A, Low VCE(sat) NPN Transistors

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    NGTB15N120FLWG

ON Semiconductor
Part No. NGTB15N120FLWG
OCR Text ... = 25 c @ t c = 100 c i c 30 15 a pulsed collector current, t pulse limited by t jmax i cm 120 a diode forward current @ t c = 25 c @ ...000001 0.001 0.01 1 thermal response (z jc ) figure 20. diode transient thermal impedance 1 0.0000...
Description IGBT

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    AO4476A

Alpha & Omega Semiconductors
Part No. AO4476A
OCR Text ...drain-source voltage 30 v a i d 15 12 110 mj avalanche current c 36 a 27 t a =25c t a =70c power dissipation b p d avalanche energy l=0.1m...000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure 9: s...
Description 30V N-Channel MOSFET

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    NGTB25N120LWG

ON Semiconductor
Part No. NGTB25N120LWG
OCR Text ...circuit withstand time v ge = 15 v, v ce = 600 v, t j 150 c t sc 5 s operating junction temperature range t j ? 55 to +150 c stor...000001 0.001 0.1 1 10 thermal response (z jc ) 1 0.00001 50% duty cycle 20% 10% 5% 2% 1% single pu...
Description Incorporated into the device is a rugged co?packaged free wheeling diode with a low forward voltage.
   IGBT

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    NGTB25N120IHLWG

ON Semiconductor
Part No. NGTB25N120IHLWG
OCR Text ...tter saturation voltage v ge = 15 v, i c = 25 a v ge = 15 v, i c = 25 a, t j = 150 c v cesat ? ? 1.85 2.1 2.3 ? v gate ? emitter thr...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 figure 18. igbt transient thermal impedance pulse...
Description Incorporated into the device is a rugged co?packaged free wheeling diode with a low forward voltage.

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    NGTB25N120FLWG

ON Semiconductor
Part No. NGTB25N120FLWG
OCR Text ... circuit withstand time v ge = 15 v, v ce = 500 v, t j 150 c t sc 10 s operating junction temperature range t j ? 55 to +150 c sto...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 50% duty cycle 20% 10% 5% 2% 1% single pulse r ...
Description IGBT

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOT5N100
OCR Text ...gate-source voltage t c =100c a 15 pulsed drain current c continuous drain current t c =25c i d 4 2.5 4* 2.5* 42 0.3 2.8 c/w units a c mj w...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance ...
Description 1000V,4A N-Channel MOSFET

File Size 392.38K  /  6 Page

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    MBRF2045CT MBRF2045CTG MBR2045CT

ON Semiconductor
Part No. MBRF2045CT MBRF2045CTG MBR2045CT
OCR Text ...t j = 25 c) i r ? ? 10.4 0.02 15 0.1 ma 2. pulse test: pulse width = 300 s, duty cycle 2.0%. device ordering information device order...000001 d = 0.5 0.1 0.05 0.01 single pulse 0.2 0.02 1.0 0.01 0.01 0.001 0.0001 0.00001 10 r(t), trans...
Description SWITCHMODE Power Rectifier

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    MBR30H100CT

ON Semiconductor
Part No. MBR30H100CT
OCR Text ...ction temperature ? 30 a total (15 a per diode leg) ? guard?ring for stress protection ? pb?free package is available applications ? power ...000001 0.1 10 100 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 r(t...
Description SWITCHMODE Power Rectifier 100 V, 30 A(100V,30A开关模式功率整流器) 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB

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    MBR30H100CTG

ON Semiconductor
Part No. MBR30H100CTG
OCR Text ...ction temperature ? 30 a total (15 a per diode leg) ? pb?free package is available applications ? power supply ? output rectification ? pow...000001 0.1 10 100 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 r(t...
Description SWITCHMODE Power Rectifier 100 V, 30 A 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB

File Size 67.78K  /  6 Page

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