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				Sunon, Inc. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4R441869A K4R271669A-NMCG6 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NBMCCG6
OCR Text	... * DQA8/DQB8 are just used for 144mb RDRAM. These two pins are NC(No Connection) in 128Mb RDRAM. b. Top marking example of mirrored package SAMSUNG 001 K4Rxxxx69A-Mxxx M A B C D E F G H J For mirrored...
Description	256K x 16/18 bit x 216 Dependent Banks Direct RDRAMTM 256 × 16/18位2 16属银行直接RDRAMTM
File Size	4,066.36K / 64 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	KM416RD8ACD-RK70 KM416RD8ACD-RK80 KM418RD8ACD-RK70 KM418RD8ACD-RK80 KM418RD2D KM416RD2C KM418RD4C KM416RD8D KM418RD4D KM416RD4D KM418RD2C KM416RD2D KM416RD8C KM418RD8C KM418RD8D KM418RD2AC KM418RD8ACD-RG60 KM416RD8ACDB-RCG60
OCR Text	... * DQA8/DQB8 are just used for 144mb RDRAM. These two pins are NC(No Connection) in 128Mb RDRAM. b. Top marking example of mirrored package SEC KOREA KM4xxRD8AD M A B C D E F G H J For mirrored packag...
Description	128/144mbit RDRAM 256K x 16/18 bit x 216 Dependent Banks Direct RDRAMTM 128/144mbit RDRAM56 × 16/18位2 16属银行直接RDRAMTM 24.9K 1% 1/4W -200 TO 500 PPM/C MF 128/144mbit RDRAM56 × 16/18位2 * 16属银行直接RDRAMTM BACKSHELL CLAMP
File Size	4,061.75K / 64 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation http://
Part No.	R1Q4A3636BBG-60R R1Q4A3618BBG-60R
OCR Text	...igher density SRAMs (i.e. 72Mb 144mb 288Mb): (9A 3A 10A) 2A 7A 5B. REJ03C0343-0003 Rev.0.03 Apr.11, 2008 page 3 of 24 R1Q4A3636B/R1Q4A3618B Pin Description Name I/O type Descriptions Synchronous address inputs: These inputs ...
Description	36-Mbit DDRII SRAM 2-word Burst
File Size	224.83K / 26 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation http://
Part No.	R1Q5A3636BBG-60R R1Q5A3618BBG-60R
OCR Text	...igher density SRAMs (i.e. 72Mb 144mb 288Mb): (9A 3A 10A) 2A 7A 5B. REJ03C0344-0003 Rev.0.03 Apr.11, 2008 page 3 of 23 R1Q5A3636B/R1Q5A3618B Pin Description Name SAx I/O type Input Descriptions Synchronous address in...
Description	36-Mbit DDRII SRAM 4-word Burst
File Size	336.60K / 25 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K7I163682B06 K7I161882B
OCR Text	... for 32Mb, 10A for 72Mb, 2A for 144mb . 2. BW0 controls write to DQ0:DQ8, BW1 controls write to DQ9:DQ17, BW2 controls write to DQ18:DQ26 and BW3 controls write to DQ27:DQ35. PIN NAME SYMBOL K, K C, C CQ, CQ Doff SA0 SA DQ0-35 PIN NUMBE...
Description	512Kx36 & 1Mx18 DDRII CIO b2 SRAM
File Size	411.65K / 18 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K7I643682M07 K7I641882M
OCR Text	...er density address, i.e. 2A for 144mb. 2. BW0 controls write to DQ0:DQ8, BW1 controls write to DQ9:DQ17, BW2 controls write to DQ18:DQ26 and BW3 controls write to DQ27:DQ35. PIN NAME SYMBOL K, K C, C CQ, CQ Doff SA0 SA DQ0-35 PIN NUMBER...
Description	2Mx36 & 4Mx18 DDRII CIO b2 SRAM
File Size	413.02K / 18 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K7J643682M07 K7J641882M
OCR Text	...r density address, i.e. 10A for 144mb and 2A for 288Mb. 2. BW0 controls write to D0:D8, BW1 controls write to D9:D17, BW2 controls write to D18:D26 and BW3 controls write to D27:D35. PIN NAME SYMBOL K, K C, C CQ, CQ Doff SA D0-35 PIN NU...
Description	2Mx36 & 4Mx18 DDR II SIO b2 SRAM
File Size	429.81K / 18 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K7R643682M07 K7R640982M K7R643682M-FI160 K7R643682M-EC160 K7R643682M-FC160 K7R643682M-EC250 K7R643682M-FI250 K7R643682M-FC20T
OCR Text	...r density address, i.e. 10A for 144mb and 2A for 288Mb. 2. BW0 controls write to D0:D8, BW1 controls write to D9:D17, BW2 controls write to D18:D26 and BW3 controls write to D27:D35. PIN NAME SYMBOL K, K C, C CQ, CQ Doff SA D0-35 PIN NU...
Description	2Mx36 & 4Mx18 & 8Mx9 QDR II b2 SRAM 2M X 36 QDR SRAM, 0.5 ns, PBGA165 2M X 36 QDR SRAM, 0.45 ns, PBGA165
File Size	457.02K / 20 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K7R643684M07 K7R641884M K7R641884M-FC200 K7R641884M-FI250
OCR Text	...r density address, i.e. 10A for 144mb and 2A for 288Mb. 2. BW0 controls write to D0:D8, BW1 controls write to D9:D17, BW2 controls write to D18:D26 and BW3 controls write to D27:D35. PIN NAME SYMBOL K, K C, C CQ, CQ Doff SA D0-35 PIN NU...
Description	2Mx36 & 4Mx18 QDR II b4 SRAM 4M X 18 QDR SRAM, 0.45 ns, PBGA165
File Size	446.19K / 19 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K7S3236T4C08 K7S3218T4C
OCR Text	...ress, i.e. 3A for 72Mb, 10A for 144mb and 2A for 288Mb. 2. BW0 controls write to D0:D8, BW1 controls write to D9:D17, BW2 controls write to D18:D26 and BW3 controls write to D27:D35. PIN NAME SYMBOL K, K QVLD CQ, CQ Doff SA D0-35 PIN NU...
Description	1Mx36 & 2Mx18 QDR II b4 SRAM
File Size	440.83K / 20 Page	View it Online	Download Datasheet

For 144mb Found Datasheets File :: 296 Search Time::2.203ms
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