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  1000-4000a Datasheet PDF File

For 1000-4000a Found Datasheets File :: 181    Search Time::2.797ms    
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    GP400LSS18

Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. GP400LSS18
OCR Text ... Tcase = 25C 1500 td(off) 1000 td(on) 500 0 0 tr 50 100 150 200 250 300 Collector current, IC - (A) 350 400 Fig.9 Typical diode reverse recovery charge vs collector current Fig.10 Typical switching characteristics 6/11 ...
Description Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 47uF; Voltage: 160V; Case Size: 16x15 mm; Packaging: Bulk
Single Switch IGBT Module

File Size 139.76K  /  11 Page

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    GP1200FSS18

DYNEX[Dynex Semiconductor]
Part No. GP1200FSS18
OCR Text ...IC - (A) 1800 1600 1400 1200 1000 800 600 400 200 Vge = 10V 1600 1400 1200 1000 800 600 400 200 0 0 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) 6.0 7.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Collector-emitter vol...
Description Single Switch IGBT Module

File Size 132.25K  /  10 Page

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    GP1200FSM18

DYNEX[Dynex Semiconductor]
Part No. GP1200FSM18
OCR Text ...IC - (A) 1800 1600 1400 1200 1000 800 600 400 200 Vge = 10V 1600 1400 1200 1000 800 600 400 200 0 0 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) 6.0 7.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Collector-emitter vol...
Description Hi-Reliability Single Switch IGBT Module

File Size 125.25K  /  9 Page

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    WESTCODE SEMICONDUCTORS LTD
Part No. WESTCODESEMICONDUCTORSLTD-N1063DZ57 N1063DZ53KOO N1063CZ65 N1063DH61JOO N1063DH61KOO N1063DH61GOO
OCR Text ... rise of off-state voltage. 200 1000 2000 v d =80% v drm . v/ s i drm peak off-state current. - - 200 rated v drm , note 2. ma i rrm peak reverse current. - - 200 rated v rrm , note 2. ma v gt gate trigger voltage - - 2.0 t j =25c. v i gt ...
Description 3930 A, 5300 V, SCR
3930 A, 6500 V, SCR
3930 A, 6100 V, SCR

File Size 85.16K  /  8 Page

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    Advanced Power Technology Ltd.
Part No. APTDF400AK20
OCR Text ... v r = 200v t j = 125c 1000 a c t junction capacitance v r = 200v 1600 pf dynamic characteristics symbol character...4000a/s t j = 125c 176 a thermal and package characteristics symbol characteristic mi...
Description Dual diodes Power Module

File Size 235.91K  /  4 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APTDF400AK60G
OCR Text ... 1.6 2.0 1.3 Max 2.0 Unit V 750 1000 760 A pF Dynamic Characteristics Symbol Characteristic trr trr Qrr IRRM trr Qrr IRRM Reverse Recove...4000A/s Min Typ 34 160 220 1.16 6.12 20 52 100 11.6 176 Max Unit ns ns C A ns C A IF...
Description Diode Phase leg Power Module

File Size 212.37K  /  4 Page

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    Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. TA449XXW TA44910W TA44912W TA44914W TA449W
OCR Text ...-state Voltage VDRM V 1400 1200 1000 Repetitive Peak Reverse Voltage VRRM V 10 10 10 Outline type code: MU86. See Package Details for further information. TA449 14 W TA449 12 W TA449 10 W Lower voltage grades available. CURRENT AND...
Description Asymmetric Thyristor

File Size 145.91K  /  12 Page

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    MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
Part No. APTDF400AK20
OCR Text ... 1.0 1.4 0.9 Max 1.1 Unit V 750 1000 1600 A pF Dynamic Characteristics Symbol Characteristic trr trr Qrr IRRM trr Qrr IRRM Reverse Recov...4000A/s Min Typ 39 60 110 800 3360 24 60 80 7.64 176 Max Unit ns ns nC A ns C A IF =...
Description 500 A, 200 V, SILICON, RECTIFIER DIODE
Dual diodes Power Module

File Size 235.91K  /  4 Page

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    Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
Part No. APTGT450A60G
OCR Text ...60G Typical Performance Curve 1000 800 T J=125C Output Characteristics (V GE=15V) T J=25C Output Characteristics 1000 TJ = 150C 800 VGE=19V VGE=13V VGE =15V VGE =9V IC (A) 400 200 0 0 0.5 T J=25C IC (A) 600 ...
Description Phase leg Trench Field Stop IGBT Power Module 550 A, 600 V, N-CHANNEL IGBT

File Size 241.14K  /  5 Page

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