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SIEMENS AG
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| Part No. |
HYS72V16220GU HYS64V16220GU HYS64V8300GU HYS72V8300GU
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| OCR Text |
1 12.99 hys 64/72v8300/16220gu sdram-modules 3.3 v 8m 64/72-bit 1 bank sdram module 3.3 v 16m 64/72-bit 2 bank sdram module 168-pin unbuffered dimm modules the hys 64(72)v8300gu and hys 64(72)v16220gu are industry-standard 168-pin 8-... |
| Description |
3.3 V 16M × 64-Bit × 2 Bank同步动态DRAM Module(3.3 V 16M × 64-× 2列同步动态RAM模块)
3.3 V 16M × 72-Bit × 2 Bank同步动态DRAM Module(3.3 V 16M × 72-× 2列同步动态RAM模块)
3.3 V 8M × 64-Bit × 1 Bank同步动态DRAM Module(3.3 V 8M × 64-× 1列同步动态RAM模块) 3.3800万64位1行同步动态内存（3.38米64 -位1列同步动态内存模块）
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| File Size |
118.31K /
17 Page |
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SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
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| Part No. |
HYM72V8010GS-60 HYM72V8010GS-50 HYM72V8000GS-60 HYM72V8000GS-50 Q67100-Q2085 Q67100-Q2086 HYM72V8000GS-50-
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| OCR Text |
...* * *
Semiconductor Group
1
115.95
HYM72V8000/10GS-50/-60 8M x 72-ECC Module
The HYM 72V8000/10GS-50/-60 is a 64 MByte DRAM module organized as 8 388 608 words by 72bit in a 168-pin, dual read-out, single-in-line package comp... |
| Description |
8M x 72 Bit ECC FPM DRAM Module buffered
8M x 72-Bit Dynamic RAM Module (ECC - Module)
8M x 72-Bit Dynamic RAM Module 8米72位动态随机存储器模块
8M x 72-Bit Dynamic RAM Module 8M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
Connector; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes 8M X 72 FAST PAGE DRAM MODULE, 50 ns, DMA168
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| File Size |
84.49K /
11 Page |
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Infineon
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| Part No. |
HYS64V4000GD-10 HYS64V8000GD-10 HYS64V1600GCD-10 HYS64V1620GCD-10
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| OCR Text |
...0(2)0GCD in COB techniques with 1" height only * This SDRAM product familiy is intended to be fully pin and architecture compatible with the...8M x 8 12 BA0,BA1 9 4k Period 64 ms 64 ms 64 ms 64 ms 64 ms
2M x 64 4M x 64 8M x 64 16M x 64 16M ... |
| Description |
32 MB PC66 2-2-2 SO-DIMM Module
64 MB PC66 2-2-2 SO-DIMM Module
128 MB PC66 2-2-2 SO-DIMM Module
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| File Size |
217.20K /
19 Page |
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NEC, Corp.
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| Part No. |
PD23C128040L
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| OCR Text |
... a3 a2 a1 a0 /ce gnd gnd o15, a-1 o7 o14 o6 o13 o5 o12 o4 v cc v cc a22 o11 o3 o10 o2 o9 o1 o8 o0 /oe, oe, dc gnd gnd 1 2 3 4 5 6 7 8 9 10 1...8m-word by 16-bit) low level : byte mode (16m-word by 8-bit) a0 to a22 (address inputs) address b... |
| Description |
128M Bits Mask-Programmable ROM.(128M位掩膜可选ROM) 128兆位掩模可编程ROM中。（128兆位掩膜可选光盘）
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| File Size |
99.49K /
16 Page |
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NEC, Corp.
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| Part No. |
PD23C128000L
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| OCR Text |
... a3 a2 a1 a0 /ce gnd gnd o15, a-1 o7 o14 o6 o13 o5 o12 o4 v cc v cc a22 o11 o3 o10 o2 o9 o1 o8 o0 /oe, oe, dc gnd gnd 1 2 3 4 5 6 7 8 9 10 1...8m-word by 16-bit) low level : byte mode (16m-word by 8-bit) a0 to a22 (address inputs) address b... |
| Description |
128M-Bit Mask-Programmable ROM(128M位掩膜可选ROM) 128M的位掩码，可编程ROM28兆位掩膜可选光盘）
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| File Size |
94.32K /
16 Page |
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it Online |
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Macronix International Co., Ltd.
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| Part No. |
27C8100-12
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| OCR Text |
...2.4, nov. 19, 2002 p/n: pm0261 1 general description the mx27c8100 is a 5v only, 8m-bit, one time program- mable read only memory. it is organized as 1m x 8 or 512k x 16, operates from a single + 5 volt supply, has a static standby mod... |
| Description |
8M-BIT [1M x8/512K x16] CMOS OTP ROM 800万位[100万x8/512K x16]检察官办公室的CMOS光盘
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| File Size |
528.07K /
15 Page |
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it Online |
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Price and Availability
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