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  1.2ghz Datasheet PDF File

For 1.2ghz Found Datasheets File :: 323    Search Time::3.328ms    
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    INFINEON[Infineon Technologies AG]
Part No. CFH120-10 CFH120 CFH120-06 CFH120-08
OCR Text ...nt Noise and gain circles at 12GHz gain_circles noise_circles Sopt freq=12GHz noise circles: 0.52dB, 0.55dB,0.6dB gain circles: 12dB, 13dB, 14dB freq (2.000GHz to 14.00GHz) cir_pts (0.000 to 51.000) Infineon Technologie...
Description Preliminary Datasheet

File Size 242.24K  /  20 Page

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    United Monolithic Semicondu...
UMS[United Monolithic Semiconductors]
United Monolithic Semiconductors GmbH
Part No. CHA2066-99F_00 CHA2066
OCR Text ...-12 -10 -8 -6 -4 Pin ( dBm ) at 12GHz 20 18 16 14 12 10 8 6 4 2 0 -2 0 -16 -14 -12 -10 -8 -6 -4 Pin ( dBm ) at 16GHz Pout Gain Pout Gain -2 -2 0 Typical Output Power measurements in test-jig. Ref. : DSCHA20661257 -14-Se...
Description 10-16GHz Low Noise Amplifier 10 - 16GHz的低噪声放大

File Size 126.72K  /  8 Page

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    United Monolithic Semiconductors GmbH
UMS[United Monolithic Semiconductors]
Part No. CHA2291-99F_00 CHA2291 CHA2291-99F/00
OCR Text ...0 -2 -4 -6 -1,4 Gain (dB) 12GHz 16GHz 20GHz 14GHz 18GHz -1,2 -1 -0,8 -0,6 -0,4 -0,2 0 Vc (V) 0,2 0,4 0,6 0,8 1 1,2 1,4 Gain versus Vc 28 27 26 25 Gain (dB) 24 23 22 21 20 19 18 -4 -2 0 ...
Description 10-18GHz Low Noise, Variable Gain Amplifier 10 - 18GHz低噪声,可变增益放大

File Size 134.80K  /  6 Page

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    UMS[United Monolithic Semiconductors]
Part No. CHM1291-99F_00 CHM1291 CHM1291-99F/00
OCR Text ...al combiner P LO = +5dBm F LO = 12GHz Down-Conversion mode with external combiner P LO = +5dBm F LO = 14GHz -6 -8 -10 -12 -6 -8 -10 -12 Conversion Loss (dB) Conversion Loss (dB) -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 -14 -...
Description 25-32GHz Single Side Band Mixer

File Size 128.75K  /  6 Page

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    EFA018A-70

List of Unclassifed Manufacturers
ETC[ETC]
Excelics Semiconductor
Part No. EFA018A-70
OCR Text ...ER 10.5dB TYPICAL POWER GAIN AT 12GHz TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND...
Description Low Distortion GaAs Power FET

File Size 19.06K  /  2 Page

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    EFA025A-70

List of Unclassifed Manufacturers
ETC[ETC]
Excelics Semiconductor
Part No. EFA025A-70
OCR Text ...ER 10.0dB TYPICAL POWER GAIN AT 12GHz TYPICAL 1.5dB NOISE FIGURE AND 10dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND R...
Description Low Distortion GaAs Power FET

File Size 31.33K  /  2 Page

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    EFA025AL

Excelics Semiconductor, Inc.
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. EFA025AL
OCR Text 12GHz 0.3 X 250 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 5mA PER BIN RANGE EFA025AL High Gain GaAs Power FET 420 50 104...
Description High Gain GaAs Power FET 高增益GaAs功率场效应管

File Size 20.54K  /  2 Page

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    EFA040A-70

Electronic Theatre Controls, Inc.
Excelics Semiconductor, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. EFA040A-70
OCR Text ...WER 8.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 400 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY 20 D S S 40 G All Dimensions In ...
Description Low Distortion GaAs Power FET 低失真GaAs功率场效应管

File Size 18.75K  /  2 Page

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    EFA060B-70

Excelics Semiconductor, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. EFA060B-70
OCR Text ...ER 7.5 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 600 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY 20 D S S 40 G All Dimensions In ...
Description Low Distortion GaAs Power FET
From old datasheet system

File Size 18.75K  /  2 Page

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    EFC060B

Excelics Semiconductor, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. EFC060B
OCR Text 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 600 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 10mA PER BIN RANGE EFC060B Low Distortio...
Description Low Distortion GaAs Power FET

File Size 20.98K  /  2 Page

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For 1.2ghz Found Datasheets File :: 323    Search Time::3.328ms    
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