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  0108.25 Datasheet PDF File

For 0108.25 Found Datasheets File :: 2247    Search Time::1.719ms    
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    2SK1195

Shindengen Electric Mfg.Co.Ltd
Part No. 2SK1195
OCR Text ...*oeAbsolute Maximum Ratings * = 25*Z*j Tc i Item Symbol Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current* DC*j i ID Continuous Drain Current* Peak) i IDP Continuous...
Description VR Series Power MOSFET(230V 1.5A)

File Size 373.63K  /  10 Page

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    2SK1318

Hitachi Semiconductor
Part No. 2SK1318
OCR Text ...his Area Limited by RDS (on) 25 ) C ) Ta = 25C 0.1 0 50 100 Case Temperature TC (C) 150 1 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 20 10 V Drain Current ID (A) 16 4V 3V Pulse Tes...
Description From old datasheet system
Silicon N Channel MOS FET High Speed Power Switching

File Size 51.20K  /  10 Page

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    2SK1808

Hitachi,Ltd.
Hitachi Semiconductor
Part No. 2SK1808
OCR Text ...uty cycle 1 % 2. Value at Tc = 25 C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 900 30 4 10 4 35 150 -55 to +150 Unit V V A A A W C C 2 2SK1808 Electrical Characteristics (Ta = 25C) Item Drain to source br...
Description Silicon N-Channel MOS FET 硅N沟道场效应晶体管
Silicon N Channel MOS FET

File Size 32.61K  /  6 Page

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    2SK1817 2SK1817-M

Fuji Electric
Part No. 2SK1817 2SK1817-M
OCR Text ...1MHz VCC=30V ID=20A VGS=10V RGS=25 IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C ID=10A Min. 100 1,0 Typ. 1,5 10 0,2 10 0,070 0,053 20 1850 400 120 5 50 350 100 1,22 70 Max. 2,5 500 1,0 100 0,120 0,080 2780 600 180 8...
Description N-channel MOS-FET

File Size 184.19K  /  2 Page

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    2SK2516-01L 2SK2516-01S

FUJI ELECTRIC HOLDINGS CO., LTD.
Part No. 2SK2516-01L 2SK2516-01S
OCR Text ...5 3500 1650 830 15 65 190 140 1,25 60 Max. 2,0 500 1,0 100 22 13 5250 2480 1250 25 100 290 210 1,80 17 50 70 Unit V V A mA nA m m S pF pF pF ns ns ns ns A V ns C Symbol R th(ch-a) R th(ch-c) Test conditions channel to a...
Description N-channel MOS-FET

File Size 216.10K  /  2 Page

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    2SK2518-01MR

Fuji Electric
Part No. 2SK2518-01MR
OCR Text ...5 500 1,0 100 0,13 2700 480 120 25 90 100 90 1,59 7,0 20,0 Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air cha...
Description N-channel MOS-FET

File Size 153.79K  /  2 Page

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    2SK2552C

NEC Corp.
Part No. 2SK2552C
OCR Text ...PATION 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 1000 800 600 400 200 0 0 2 4 6 8 10 VGS = 0.2 V -0.2 V -0.3 V 0.1 V dT - Derating Factor - % ID - Drain Current - A 0V -0.1 V ...
Description JUNCTION FIELD EFFECT TRANSISTOR

File Size 122.99K  /  5 Page

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    2SK2554

Hitachi Semiconductor
Part No. 2SK2554
OCR Text ... 50 100 150 Tc (C) 200 0.5 Ta = 25 C 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) Operation in this area is limited by R DS(on) C D Maximum Safe Operation Area 10 PW = 10 0 s s 150 1 10 m s m (1 s Ch...
Description Silicon N-Channel MOS FET

File Size 50.50K  /  10 Page

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    2SK2618ALS

Sanyo Semicon Device
Part No. 2SK2618ALS
OCR Text ....0 0.95 700 250 120 20 20 20 50 25 1.2 1.25 5.5 typ max Unit V mA nA V S pF pF pF nC ns ns ns ns V Package Dimensions unit : mm (typ) 7509-002 Switching Time Test Circuit VDD=200V 10.0 3.2 4.5 2.8 PW=1s D.C.0.5% VGS=15V 3....
Description N-Channel Silicon MOSFET General-Purpose Switching Device

File Size 43.70K  /  4 Page

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    2SK3504-01

Fuji Electric
Part No. 2SK3504-01
OCR Text .... 500 3.0 Typ. Max. 5.0 25 250 100 0.46 Units V V A nA S pF 7 10 0.35 14 1600 2400 160 240 7 10.5 18 27 16 24 35 50 8 15 33 50 12.5 19 10.5 16 1.00 0.65 6.0 ns nC 16 1.50 A V s C Thermalcharacteristics Ite...
Description N-CHANNEL SILICON POWER MOSFET

File Size 97.34K  /  4 Page

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