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For 0.55h Found Datasheets File :: 684 Search Time::1.484ms
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				Dallas Semiconductor Corp
Part No.	DS2430AP DS2430A
OCR Text	...egister bits are initialized to 0. Then starting with the least significant bit of the family code, one bit at a time is shifted in. After t...55h] After the data stored in the scratchpad has been verified the master may send the Copy Scratch...
Description	SERIAL EEPROM,32X8,SOC,6PIN,PLASTIC SERIAL EEPROM,32X8,SIP,3PIN,PLASTIC From old datasheet system
File Size	318.95K / 16 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TC58FVM5B2 TC58FVM5B3 TC58FVM5T2AFT65 TC58FVM5B2AFT65 TC58FVM5B2AXB65 TC58FVM5T3AXB65 TC58FVM5B3AFT65 TC58FVM5B3AXB65 TC58FVM5T2AXB65 TC58FVM5T3AFT65
OCR Text	...2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4194304 words x 8 bits or as ...55h 555h AAAh BK (3) F0h RA (1) RD (2) + + 90h IA (4) 55h 555h 2AAh 555h 2...
Description	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
File Size	785.68K / 63 Page	View it Online	Download Datasheet

				http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	M5M29GB160BVP M5M29GB160BVP-80 M5M29GT160BVP M5M29GT160BVP-80 E99001_A M5M29GB160BWG M5M29WB160BVP M5M29WT160BVP M5M29GB161BVP M5M29WT161BWG M5M29GB161BWG M5M29GT160BWG M5M29GT161BVP M5M29GT161BWG M5M29WB160BWG M5M29WB161BVP M5M29WB161BWG M5M29WT160BWG M5M29WT161BVP
OCR Text	................. 80ns (Vcc=3.3V+/-0.3V) 90ns (Vcc=2.7~3.6V) Power Dissipation ................................. 54 mW (Max. at 5MHz) Read ...55H) Loaded data to the page buffer is cleared by writing the Clear Page Buffer command of 55H follo...
Description	16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY From old datasheet system 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
File Size	226.99K / 25 Page	View it Online	Download Datasheet

				http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	M5M29GB M5M29GB161BWG M5M29GT161BWG E99002_A M5M29WT161BWG M5M29GB160BVP M5M29GB160BWG M5M29GB161BVP M5M29GT160BVP M5M29GT160BWG M5M29GT161BVP M5M29WB160BVP M5M29WB160BWG M5M29WB161BVP M5M29WB161BWG M5M29WT160BVP M5M29WT160BWG M5M29WT161BVP M5M29T161BWG
OCR Text	...are available in 6x8-balls CSP (0.75mm ball pitch) . FEATURES Organization .................................1048,576 word x 16bit (M...55H) Loaded data to the page buffer is cleared by writing the Clear Page Buffer command of 55H follo...
Description	16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory From old datasheet system 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY CMOS 3.3V-only block erase flash memory
File Size	198.45K / 23 Page	View it Online	Download Datasheet

				Fujitsu
Part No.	MBM29SL800BD-12 MBM29SL800BD-10 MBM29SL800TD-12 MBM29SL800TD-10
OCR Text	...stem with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can als...55h 55h 55h 55h 55h 555h AAAh 555h AAAh 555h AAAh 555h AAAh 555h AAAh F0h 90h A0h 80h 80h RA PA ...
Description	Flash Memory - Super Low Voltage Single 2V
File Size	289.88K / 57 Page	View it Online	Download Datasheet

				MCNIX[Macronix International]
Part No.	MX29LV008BTC-70 MX29LV008BTC-90 MX29LV008BTI-70 MX29LV008BTI-90 MX29LV008T MX29LV008TTC-70 MX29LV008TTC-90 MX29LV008TTI-70 MX29LV008TTI-90 MX29LV008B
OCR Text	...- 20mA maximum active current - 0.2uA typical standby current * Command register architecture - Byte Programming (7us typical) - Sector Eras...55H 55H 55H 555H 555H 555H 90H ADI 90H ADI 90H (SA) x02H DDI DDI 00H 01H PD 2AAH 55H 2AAH 55H 555H 1...
Description	8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
File Size	468.88K / 52 Page	View it Online	Download Datasheet

				MCNIX[Macronix International]
Part No.	MX29LV081 MX29LV081TC-70 MX29LV081TC-90 MX29LV081TI-70 MX29LV081TI-90
OCR Text	...- 20mA maximum active current - 0.2uA typical standby current * Command register architecture - Byte/word Programming (7us/12us typical) - S...55H 55H 55H XXXH XXXH XXXH 90H X00H C2H 90H ADI 90H (SA) x02H XXXH AAH XXXH XXXH AAH XXXH AAAH AAH 5...
Description	8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY
File Size	463.39K / 51 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	M6MGT162S2BVP
OCR Text	...ackage : 48-pin TSOP (Type-I) , 0.4mm lead pitch technology for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the ...55H) Loaded data to the page buffer is cleared by writing the Clear Page Buffer command of 55H follo...
Description	CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
File Size	229.04K / 28 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	M6MGT162S4BVP M6MGB162S4BVP
OCR Text	...ackage : 48-pin TSOP (Type-I) , 0.4mm lead pitch bit-line NOR) architecture for the memory cell. 4M-bits SRAM is a 262144words unsynchronous...55H) Loaded data to the page buffer is cleared by writing the Clear Page Buffer command of 55H follo...
Description	CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
File Size	232.77K / 28 Page	View it Online	Download Datasheet

For 0.55h Found Datasheets File :: 684 Search Time::1.484ms
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