|
|
 |
ST Microelectronics SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V.
|
Part No. |
STW5NA100 5367 STH5NA100FI STH5NA100
|
OCR Text |
...Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Cu...362 0.217 0.118 0.144 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.4... |
Description |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTORS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS From old datasheet system N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式快速功率MOS晶体 N沟道增强模式功率MOS晶体管(不适用沟道增强模式快速功率马鞍山晶体管)
|
File Size |
98.06K /
6 Page |
View
it Online |
Download Datasheet
|