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NEC Corp. NEC[NEC]
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Part No. |
2SC5180
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OCR Text |
...E DIMENSIONS
(Units : mm) 2.1 0.2 1.25 0.1
* Supper Mini-Mold package
S21e 2 = 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
0.3 ...148 0.155 0.162 0.173 S12 ANG 57.5 55.0 54.0 57.7 56.5 55.9 57.4 55.7 53.0 MAG 0.729 0.614 0.527 0.4... |
Description |
ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
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File Size |
52.07K /
8 Page |
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DATA DEVICE CORP
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Part No. |
SDC-630-ST-I-3
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OCR Text |
... 8.5 minutes 14 bit: 4 minutes, 0.9 lsb or 2.6 minutes (high accuracy) options (consult factory): velocity input bit: built-in-test 16-bi...148 k ? min 148 k ? min 19 k ? min 148 k ? min 42 k ? min 19 k ? min 123 k ? 123 k ? 52 k ? ? ? 70 k... |
Description |
SYNCHRO OR RESOLVER TO DIGITAL CONVERTER, DMA27
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File Size |
96.18K /
8 Page |
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HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
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Part No. |
2SC5773
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OCR Text |
...minium ceramic board (25 x 60 x 0.7 mm)
Electrical Characteristics (Ta = 25C)
Item Collector to base breakdown voltage Collector cutoff ...148 0.161 0.174 0.188 0.201 0.215 0.227 0.242 0.255 0.268 0.281 0.292 ANG 60.3 51.4 51.7 53.9 56.1 5... |
Description |
Silicon NPN Transistor Silicon NPN Epitaxial UHF / VHF wide band amplifier npn型硅外延超高甚高频宽带放大器
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File Size |
86.41K /
13 Page |
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Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
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Part No. |
APT10021JFLL_04 APT10021JFLL APT10021JFLL04
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OCR Text |
0.210
POWER MOS 7
(R)
R
FREDFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement...148 30 40 694 5.56 -55 to 150 300 37 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Tra... |
Description |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
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File Size |
151.86K /
5 Page |
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Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
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Part No. |
APT10021JLL_04 APT10021JLL APT10021JLL04
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OCR Text |
0.210
POWER MOS 7
(R)
R
MOSFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement ...148 30 40 694 5.56 -55 to 150 300 37 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Tra... |
Description |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
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File Size |
151.08K /
5 Page |
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it Online |
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Price and Availability
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