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  0.033 Datasheet PDF File

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    APT5014B2LC APT5014LLC APT5014

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
Part No. APT5014B2LC APT5014LLC APT5014
OCR Text 0.140W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lowe...033) 1.30 (.051) 2.79 (.110) 2.59 (.102) 3.18 (.125) 3.00 (.118) 5.45 (.215) BSC 2-Plcs. 050-5919...
Description POWER MOS VI 500V 37A 0.140 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET

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    APT5014LVR

ADPOW[Advanced Power Technology]
Part No. APT5014LVR
OCR Text 0.140 POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology m...033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Pl...
Description POWER MOS V 500V 37A 0.140 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT50GF120B2R APT50GF120LR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT50GF120B2R APT50GF120LR
OCR Text ... Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES RBVCES VGE(TH) VCE(ON) Chara...033) 1.30 (.051) 2.79 (.110) 2.59 (.102) 3.18 (.125) 3.00 (.118) 5.45 (.215) BSC 2-Plcs. Dimensio...
Description The Fast IGBT is a new generation of high voltage power IGBTs. 该快速IGBT是一种高压IGBT的新一代
Fast IGBT 1200V 80A

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    APT50GF120JRD

ADPOW[Advanced Power Technology]
Part No. APT50GF120JRD
OCR Text ... Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. M 1200 4.5 5.5 2.9 3.5 6.5 3.4 4.1 1.0 2 Volts Collector-Emitter O...033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 1.95 ...
Description Fast IGBT & FRED 1200V 75A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.

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    APT50M38JFLL

ADPOW[Advanced Power Technology]
Part No. APT50M38JFLL
OCR Text 0.038W S POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFE...033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) 050-7030 Rev - 3-2001 14....
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    APT50M38JLL

Advanced Power Technology
Part No. APT50M38JLL
OCR Text 0.038 W S G D S POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Bo...033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) 050-7020 Rev - 1-2001 14....
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL

ADPOW[Advanced Power Technology]
Part No. APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL
OCR Text 0.050W S POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFE...033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) 050-7117 Rev - 9-2001 14....
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    APT50M50JLC APT5010JLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT50M50JLC APT5010JLC
OCR Text 0.050 W S G D S POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOS...033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) 050-5932 Rev - 12-99 14.9...
Description POWER MOS VI 500V 77A 0.050 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

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    APT50M50JVFR

ADPOW[Advanced Power Technology]
Part No. APT50M50JVFR
OCR Text 0.050 S G D S POWER MOS V (R) FREDFET Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs....033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1....
Description POWER MOS V 500V 77A 0.050 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT50M50JVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT50M50JVR
OCR Text 0.050 S G D S POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new tec...033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1....
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 77A 0.050 Ohm

File Size 70.86K  /  4 Page

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