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hitachi
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| Part No. |
2SC2620
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| OCR Text |
... --
1
Typ -- -- -- -- -- -- 0.17 0.72 940 0.9
Max -- -- -- 0.5 0.5 200 -- -- -- --
Unit V V V A A
Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 10 V, IC = 0 VEB = 2 V, IC = 0 VCE = 6 V, IC = 1 m... |
| Description |
Silicon NPN Epitaxial Planar
From old datasheet system
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| File Size |
15.73K /
4 Page |
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it Online |
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panasonic
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| Part No. |
2SC3314
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| OCR Text |
...00.2
s Features
q q q q
(0.8) 3.00.2
Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT.
s Absolute Maximum Ratings
Parameter C... |
| Description |
NS-A1
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| File Size |
57.03K /
4 Page |
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NEC[NEC]
NEC Corp.
NEC, Corp.
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| Part No. |
2SC3585 2SC3585-T1B 2SC3585R43 2SC3585R45 2SC3585R44 2SC3585Q 2SC3585S 2SC3585-L 2SC3585-T2B
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| OCR Text |
...MENSIONS (Units: mm)
2.80.2
0.4 -0.05
+0.1
1.5
0.65 -0.15
+0.1
0.95 0.95
FEATURES
* NF * Ga 1.8 dB TYP. 9 dB TYP. @f = 2.0 GHz @f = 2.0 GHz
2.90.2
2
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Vol... |
| Description |
For amplify microwave and low noise.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 10V的五（巴西）总裁| 35MA一（c）|的SOT - 346
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 35MA I(C) | SOT-346 晶体管|晶体管|叩| 10V的五（巴西）总裁| 35MA一（c）|的SOT - 346
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| File Size |
101.86K /
8 Page |
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it Online |
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Sanyo
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| Part No. |
2SC3595
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| OCR Text |
...T VCE(sat) VBE(sat) VCB=20V, IE=0 VEB=2V VCE=5V, IC=50mA VCE=5V, IC=500mA VCE=5V, IC=100mA IC=300mA, IB=30mA IC=300mA, IB=30mA 40* 20 2.0 0.25 0.92 0.6 1.2 GHz V V Conditions Ratings min typ max 0.1 5.0 200* Unit A A
* : The 2SC3595 is c... |
| Description |
NPN Epitaxial Planar Silicon Transistor Ultrahigh-Definition CRT Display Video Output Applications
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| File Size |
90.02K /
3 Page |
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it Online |
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Sanyo
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| Part No. |
2SC3771
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| OCR Text |
...igh power gain : PG=10dB typ (f=0.9GHz). PG=16dB typ (f=0.4GHz). * Small noise figure : NF=3.5dB typ (f=0.9GHz). * High cutoff frequency : fT=2.2GHz typ.
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base V... |
| Description |
NPN Epitaxial Planar Silicon Transistor UHF, VHF Oscillator Mixer, HF Amplifier Applications
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| File Size |
136.33K /
5 Page |
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Sanyo
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| Part No. |
2SC3914 2SA1520
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| OCR Text |
...e current capacity : IC=500mA.
0.5
0.4 3
0.16 0 to 0.1
1 0.95 0.95 2 1.9 2.9
0.8 1.1
0.5
1.5 2.5
( ) : 2SA1520
1 : Base 2 : Emitter 3 : Collector SANYO : CP
Specifications
Absolute Maximum Ratings at Ta = 25C
P... |
| Description |
NPN Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance)
PNP Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance)
PNP/NPN Epitaxial Planar Silicon Transistors
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| File Size |
28.84K /
3 Page |
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it Online |
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hitachi
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| Part No. |
2SC4046
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| OCR Text |
...Tj Tstg
1
Ratings 120 120 5 0.2 8 150 -55 to +150
Unit V V V A W C C
2SC4046
Electrical Characteristics (Ta = 25C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 5 --
1
Typ -- -- -- -- -- -- -- 350 3.5
... |
| Description |
Silicon NPN Epitaxial
From old datasheet system
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| File Size |
35.06K /
5 Page |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
2SC4367
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| OCR Text |
...- -- -- 1000 1.3 Max -- -- -- 1.0 -- 1.0 -- -- V MHz pF Unit V V V A Test conditions I C = 10 A, IE = 0 I C = 3 mA, RBE = I E = 10 A, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA I C = 20 mA, IB = 4 mA VCE = 10 V, IC = 10 mA VCB = 10 V... |
| Description |
Silicon NPN Epitaxial
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| File Size |
28.78K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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