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  -80v Datasheet PDF File

For -80v Found Datasheets File :: 7844    Search Time::1.672ms    
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    MP1906

Monolithic Power Systems
Part No. MP1906
OCR Text 80v, half-bridge, gate driver mp1906 rev. 1.0 www.monolithicpower.com 1 1/3/2013 mps proprietary information. patent protec ted. unauthorized photocopy and duplication prohibited. ? 2013 mps. all rights reserved. the future...
Description 80V, Half-Bridge, Gate Driver

File Size 315.26K  /  11 Page

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    IRFB4110QPBF

International Rectifier
Part No. IRFB4110QPBF
OCR Text ... = 1.0MHz VGS = 0V, VDS = 0V to 80V VGS = 0V, VDS = 0V to 80V g j h D Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Adi Diode Forw...
Description HEXFET Power MOSFET

File Size 303.59K  /  8 Page

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    FDPF3860T

FAIRCHILD SEMICONDUCTOR CORP
Part No. FDPF3860T
OCR Text ... 250A, Referenced to 25oC VDS = 80V, VGS = 0V VDS = 48V, TC = 150oC VGS = 20V, VDS = 0V 100 0.1 1 500 100 V V/oC A nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconduc...
Description 100V N-Channel PowerTrench MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail
N-Channel PowerTrench㈢ MOSFET 100V, 20A, 38.2mヘ
N-Channel PowerTrench? MOSFET 100V, 20A, 38.2mΩ

File Size 509.57K  /  8 Page

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    TN5D01A

Sanyo Semicon Device
Part No. TN5D01A
OCR Text ...., Ltd. 100H Component 4A 1200F/80V 1200F/80V 1200F/80V 2200F/80V 0.1F/100V Specification Littelfuse Nippon Chemi-Con Corp. Nippon Chemi-Con Corp. Nippon Chemi-Con Corp. SANYO Electronic Co., Ltd. Matsushita Electronic Components Corp. Make...
Description Separately-Excited Step-Down Switching Regulator

File Size 486.40K  /  11 Page

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    LT4356-3 LT4356IDE-3 LT4356IDE-3PBF LT4356IDE-3TR LT4356IDE-3TRPBF LT4356IMS-3 LT4356IMS-3PBF LT4356IMS-3TR LT4356IMS-3T

Linear Technology
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Part No. LT4356-3 LT4356IDE-3 LT4356IDE-3PBF LT4356IDE-3TR LT4356IDE-3TRPBF LT4356IMS-3 LT4356IMS-3PBF LT4356IMS-3TR LT4356IMS-3TRPBF LT4356IS-3 LT4356IS-3PBF LT4356IS-3TRPBF LT4356CDE-3 LT4356CDE-3PBF LT4356CDE-3TR LT4356CDE-3TRPBF LT4356CMS-3 LT4356CMS-3PBF LT4356CMS-3TR LT4356CMS-3TRPBF LT4356CS-3 LT4356CS-3PBF LT4356CS-3TR LT4356CS-3TRPBF
OCR Text ...ion Wide Operation Range: 4V to 80V Reverse Input Protection to -60V Low 7A Shutdown Current Adjustable Latchoff Fault Timer Controls N-channel MOSFET Shutdown Pin Withstands -60V to 100V Fault Output Indication Spare Amplifier for Level De...
Description Surge Stopper with Fault Latchoff

File Size 217.96K  /  24 Page

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    M63850P M63850FP

Mitsubishi Electric Semiconductor
Part No. M63850P M63850FP
OCR Text ...OS High breakdown voltage (VDS 80V) High-current driving (IDS(max) = 1.5A) With clamping diodes Drain-source on-state low resistance (RON = 0.72, @ = 1.25A) Wide operating temperature range (Ta = -40 to +85C) IN2 6 NC 7 O2 8 11 IN3 1...
Description 4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE

File Size 48.14K  /  5 Page

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    XTV12850

CSB Battery Co., Ltd.
Part No. XTV12850
OCR Text ...s. 6 12 85 Ah @ 10hr-rate to 1.80V per cell @25 (77 Approx. 31.2 kg(68.78 lbs) 800A(5sec) Approx. 6.5m Discharge: -20 ~50 (-4 ~122 ) (-4 ~122 ) Charge: -20 ~50 (5 ~104 ) Storage: -15 ~40 25 3 (77 5) 13.5 to 13.8 VDC/unit Average at 25 (77 ...
Description general battery up to 12years

File Size 503.15K  /  2 Page

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    SSG8N10

SeCoS Halbleitertechnologie GmbH
Part No. SSG8N10
OCR Text ...= 20v t j =25c - - 1 v ds =80v, v gs =0 drain-source leakage current t j =55c i dss - - 10 a v ds =80v, v gs =0 - - 48 v gs =10v, i d =8a static drain-source on-resistance 2 r ds(on) - - 50 m v gs =4.5v, i d...
Description N-Ch Enhancement Mode Power MOSFET

File Size 453.31K  /  4 Page

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