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Advanced Power Electron...
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| Part No. |
AP6N090K
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| OCR Text |
...in-source leakage current v ds =48v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =3a - 10 16 nc q gs gate-source charge v ds =48v - 1.5 - nc q gd gate-drain ("miller") charge v g... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
109.17K /
6 Page |
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it Online |
Download Datasheet
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Advanced Power Electron...
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| Part No. |
AP6N100J
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| OCR Text |
...in-source leakage current v ds =48v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =5a - 10 16 nc q gs gate-source charge v ds =48v - 1.5 - nc q gd gate-drain ("miller") charge v g... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
70.02K /
6 Page |
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it Online |
Download Datasheet |
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International Rectifier
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| Part No. |
IRHY593034CM IRHY597034CM IRHY597034CM-15
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| OCR Text |
...DS = -25V, IDS = -12.5A A VDS= -48V ,VGS=0V VDS = -48V, VGS = 0V, TJ =125C VGS = -20V VGS = 20V VGS =-12V, ID = -18A VDS = -30V VDD = -30V, ID = -18A, VGS =-12V, RG = 7.5,
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-So... |
| Description |
18 A, 60 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Simple Drive Requirements
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| File Size |
201.61K /
8 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHM8054 IRHM4054 IRHM3054 IRHM7054
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| OCR Text |
...0mA VDS > 15V, IDS = 30A A VDS= 48V ,VGS=0V VDS = 48V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 35A VDS = 30V VDD =30V, ID = 35A VGS =12V, RG = 2.35
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Lea... |
| Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
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| File Size |
163.63K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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