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  lm358 u003d lm358 Datasheet PDF File

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    IRFP264 IRFP264PBF

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFP264 IRFP264PBF
Description 250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=250V, Rds(on)=0.075ohm, Id=38A) 功率MOSFET(减振钢板基本\u003d 250V,的Rdson)\u003d 0.075ohm,身份证\u003d 38A条)

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    IRFP354

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFP354
Description 450V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=450V, Rds(on)=0.35ohm, Id=14A) 功率MOSFET(减振钢板基本\u003d 450V,的Rdson)\u003d 0.35ohm,身份证\u003d 14A条)

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    International Rectifier, Corp.
Part No. IRFZ44ZLPBF
Description HEXFETPower MOSFET ( VDSS = 55V , RDS(on) = 13.9m, ID = 51A ) ㈢的HEXFET功率MOSFET(减振钢板基本\u003d 55V的,的RDS(on)\u003d十三点九米ヘ,身份证\u003d 51A条)

File Size 286.19K  /  13 Page

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    NXP Semiconductors N.V.
Part No. BGV503
Description Negative Voltage Generator IC. Vout = -2.1 ... -5 V. Iout.max = 5 mA. TSSOP-10 ?负电压发生器芯片。输出电压\u003d -2.1 ... -5五,输出电流。最大值\u003d 5毫安。采用TSSOP - 10

File Size 103.28K  /  11 Page

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    International Rectifier, Corp.
Part No. IRFR9024PBF IRFU9024PBF
Description HEXFET POWER MOSFET ( VDSS = -60V , RDS(on) = 0.28, ID = -8.8A ) HEXFET功率MOSFET(减振钢板基本\u003d - 60V的,的RDS(on)\u003d 0.28ヘ,身份证\u003d - 8.8A
HEXFET POWER MOSFET ( VDSS = -60V , RDS(on) = 0.28, ID = -8.8A ) HEXFET功率MOSFET(减振钢板基本\u003d - 60V的,RDS(on)\u003d 0.28ヘ,身份证\u003d - 8.8A

File Size 1,177.09K  /  10 Page

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    IRFP254

International Rectifier, Corp.
Samsung semiconductor
Part No. IRFP254
Description Power MOSFET(Vdss = 250 V, Rds(on)=0.14ohm, Id=23A) 功率MOSFET(减振钢板基本\u003d 250伏,的Rdson)\u003d 0.14ohm,身份证\u003d 23A条)
HEXFET? Power MOSFET
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package

File Size 161.68K  /  6 Page

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    IRG4BC10S IRG4BC10SPBF

International Rectifier, Corp.
Part No. IRG4BC10S IRG4BC10SPBF
Description INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A) 绝缘栅双极晶体管IGBT的标准速度VCES和\u003d 600V电压的Vce(on)typ.1.10V @和VGE \u003d 15V的,集成电路\u003d 2.0安培
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package

File Size 150.49K  /  8 Page

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    IRFP32N50K IRFP32N50 IRFP32N50KPBF

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFP32N50K IRFP32N50 IRFP32N50KPBF
Description 500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
From old datasheet system
HEXFET? Power MOSFET
Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A) 功率MOSFET(减振钢板基本\u003d 500V及的Rdson)典\u003d 0.135ohm,身份证\u003d 32A条)

File Size 92.81K  /  8 Page

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    IRFP240 IRFP250NPBF IRFP240PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFP240 IRFP250NPBF IRFP240PBF
Description Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=20A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rdson)\u003d 0.18ohm,身份证\u003d 20A条)
HEXFET? Power MOSFET
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package

File Size 164.20K  /  6 Page

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    International Rectifier, Corp.
Part No. IRSF3011
Description FULLY PROTECTED POWER MOSFET SWITCH(Vds=50V, Rds(on)=200mohm) 充分保护功率MOSFET开关(讥\u003d 50V的的Rds(on)\u003d 200mohm

File Size 481.92K  /  12 Page

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