| |
|
 |
NXP semiconductors N.V.
sTMicroelectronics N.V.
|
| Part No. |
C4123 C5334 C4124 C4133 C4323 C4134 C4324 C3323 C1133 C3124 C3134 C3123 C3133 C2324 C3324 C3324P C3323P C5134 C3334P C5124 C3333P C2123 C2124 C5123 C2333 C3124P C3123P C1324 C1334 C5323 C5324 C3134P C1124
|
| Description |
MEMs digital output motion sensor ultra low-power high performance 3-axes "nano" accelerometer
18-sTAGE sTATIC sHIFT REGIsTER
MEMs digital output motion sensor ultra low-power high performance 3-axes nano accelerometer
MEMs inertial sensor 3-axis ultracompact linear accelerometer
MEMs inertial sensor: 3-axis - ± 2g/± 6g digital output low voltage linear accelerometer
LOW DROP POWER sCHOTTKY RECTIFIER
13.56 MHz short-range contactless memory chip with 4096-bit EEPROM, anticollision and anti-clone functions
Memory tag IC at 13.56 MHz, with 64-bit unique ID and WORM user area, IsO 15693 and IsO 18000-3 Mode 1 compliant
13.56 MHz short-range contactless memory chip with 4096-bit EEPROM and anticollision functions
13.56 MHz short-range contactless memory chip with 512-bit EEPROM and anticollision functions
Turbo 2 ultrafast high voltage rectifier
5V, 16kbit (2Kb x 8) ZEROPOWER sRAM
Dual decade counter
3.3V, 256Kbit (32Kbit x 8) ZEROPOWER4; sRAM
Analog multiplexer/demultiplexer with address latch : single 8 channel
5.0V or 3.3V, 1 Mbit (128 Kbit x 8) ZEROPOWER4; sRAM
TURBO2 ULTRAFAsT HIGH VOLTAGE RECTIFIER
Quad bilateral switch
5V or 3.3V, 16 Mbit (2Mb x 8) ZEROPOWER4; sRAM
Dual J-K flip flop with preset and clear
4-bit magnitude comparator
2048-bit EEPROM tag IC at 13.56 MHz, with 64-bit UID and Password, IsO15693 and IsO18000-3 Mode 1 compliant
MEMs inertial sensor: 3-axis - /-2g/6g ultracompact linear accelerometer 光电
432-bit UHF, EPCglobal Class1 Generation2 and IsO 18000-6C, contactless memory chip with user memory 光电
|
| File Size |
245.20K /
3 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
sTMICROELECTRONICs[sTMicroelectronics]
意法半导
sTMicroelectronics N.V.
|
| Part No. |
M24C16-BN6TP M24C16-BN6TG M24C16-BN6TG_W M24C16-BN6T_G M24C16-BN6TP_G M24C16-BN3TP_G M24C16-BN6TG_G M24C16-BN6T_W M24C16-BN6TP_W M24C16-BN3TP_W M24C08-WMN6T M24C02-WMN3T M24C02-WMN3TG_W M24C02-WMN3TP_G M24C02-WMN3TP_W M24C08 M24C16-MB3T M24C16-MB3T_G M24C16-MB3T_W M24C16-MB3TG M24C16-MB3TG_G M24C16-MB3TG_W M24C16-MB3TP M24C16-MB3TP_G M24C16-MB3TP_W M24C16-MB6T M24C16-MB6T_G M24C16-MB6T_W M24C16-MB6TG M24C16-MB6TG_G M24C16-MB6TG_W M24C16-MB6TP M24C16-MB6TP_G M24C16-MB6TP_W M24C16-MN3T M24C16-MN3T_G M24C16-MN3T_W M24C16-MN3TG M24C16-MN3TG_G M24C16-MN3TG_W M24C16-MN3TP M24C16-MN3TP_G M24C16-MN3TP_W M24C16-MN6T M24C16-MN6T_G M24C16-MN6T_W M24C16-MN6TG M24C16-MN6TG_G M24C16-MN6TG_W M24C16-MN6TP M24C16-MN6TP_G M24C16-MN6TP_W M24C04-RMN3T M24C04-RMN3T_G M24C04-RMN3T_W M24C04-RMN3TG M24C04-RMN3TG_G M24C04-RMN3TG_W M24C04-RMN3TP M24C04-RMN3TP_G M24C04-RMN3TP_W M24C04-RMN6T M24C04-RMN6T_G M24C04-RMN6T_W M24C04-RMN6TG M24C04-RMN6TG_G M24C04-RMN6TG_W M24C04-RMN6TP M24C04-RMN6TP_G M24C04-RMN6TP_W M24C16-WMN6T M24C16-RMN6T M24C04-MN6T M24C04-MN6T_G M24C04-MN6T_W M24C04-MN6TG M24C04-MN6TG_G M24C04-MN6TG_W M24C04-MN6TP M24C04-MN6TP_G M24C04-MN6TP_W M24C16-WMN6T_G M24C16-WMN6T_W M24C16-WMN6TG M24C1
|
| Description |
16kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit serial I2C Bus EEPROM
45 V, 100 mA NPN general-purpose transistors
General purpose PIN diode
12-Bit, 2.5 us Dual DAC, serial Input, Pgrmable settling Time, simultaneous Update, Low Power 8-CDIP -55 to 125
8-Bit Constant-Current LED sink Driver 16-TssOP -40 to 125
Removal Tool, Han D; RoHs Compliant:N/A RoHs Compliant: Yes
CRIMP sET 0.14 - 0.50MM ;
NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; f<sub>Tsub>: 1 GHz; Frequency: 4.5 MHz; I<sub>Csub>: 25 mA; Noise figure: 4.5@f1 dB; P<sub>totsub>: 300 mW; Polarity: NPN ; VCEO max: 15 V
16-Channel LED Driver 100-HTQFP -20 to 85
8-Bit Constant-Current LED sink Driver 16-sOIC -40 to 125
8-Bit, 10 us Quad DAC, serial Input, Pgrmable for 1x or 2x Output, simultaneous Update, Low Power 14-sOIC -40 to 85
Microprocessor Crystal; Frequency:20MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; EsR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHs Compliant: Yes
8-Bit, 10 us Quad DAC, serial Input, Pgrmable for 1x or 2x Output, simultaneous Update, Low Power 14-PDIP -40 to 85
ER 4C 4#4 PIN RECP WALL
8-Bit, 10 us Octal DAC, serial Input, Pgrmable for 1x or 2x Output, simultaneous Update, Low Power 16-sOIC 0 to 70
Power LDMOs transistor
Three quadrant triacs guaranteed commutation - I<sub>GTsub>: 25 mA; I<sub>Tsub> (R<sub>Mssub>): 16 A; V<sub>DRMsub>: 600 V
18-Bit Registered Transceiver With 3-state Outputs 56-ssOP -40 to 85
45 V, 500 mA PNP general purpose transistors - fT min: 80 MHz; hFE max: 250 ; hFE min: 100 ; I<sub>Csub> max: 500 mA; Polarity: PNP ; Ptot max: 625 mW; VCEO max: 45 V
ER 4C 4#4 sKT RECP WALL
Replaced by TLV5734 : 8-Bit, 20 MsPs ADC Triple Ch., Digital Clamp for YUV/NTsC/PAL, Output Data Format Mux, Low Power 64-LQFP -20 to 75
8-Bit, 10 us Octal DAC, serial Input, Pgrmable for 1x or 2x Output, simultaneous Update, Low Power 16-sOIC -40 to 85
NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; fT: 1 GHz; Frequency: 4.5 MHz; IC: 25 mA; Noise figure: 4.5@f1 dB; Ptot: 300 mW; Polarity: NPN ; VCEO max: 15 V
Dual N-channel dual gate MOsFET - ID: 30 mA; IDss: 100 (max) mA; VDsmax: 6 V
ER 23C 16 12 8 4 PIN RECP WALL
D87 - CONNECTOR ACCEssORY
ER 5C 3#12 2#0 sKT RECP WALL
silicon planar diode - Cd max.: 1.0@VR=20V pF; IF max: 100 mA; RD @ IF=5 mA AND F=200 MHz max: 0.7 Ohm; Rs max: 0.7 ; VR max: 35 V
Triple high-speed switching diodes - Cd max.: 1.5 pF; Configuration: triple isolated ; IF max: 200 mA; IFsM max: 4.5 A; IR max: 1000@VR=75V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V
NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22@f1 dB; Ptot: 300 mW; Polarity: NPN ; socket: IF ; system frequency: 9
P-channel enhancement mode vertical D-MOs transistor - Configuration: single P-channel ; ID DC: 0.2 A; RDs(on): 12000@10V mOhm; VDsmax: 240 V
Removal Tool Han E Crimpcontacts in E Mo; RoHs Compliant:N/A
PNP 5 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 70 mA; fT: 5 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 100 mA; Ptot: 1000 mW; Polarity: PNP ; VCE: 10 V; V<sub
Three quadrant triacs guaranteed commutation - IGT: 25 mA; IT (RMs): 16 A; VDRM: 600 V
PowerMOs transistor Logic level TOPFET - @ VIs: 5 V; ID: 0.7 A; Number of pins: 3 ; RDs(on): 0.2 mOhm; VDsmax: 50 V
silicon RF switches - [s21(Off)]2 min: 30 ; [s21(On)]2 max: 3 ; ID: 10 mA; IGss max: 100 nA; Mode: depl. ; RDs(on): 20 Ohm; s21(off): 30 dB; s21(on): 3 dB; VDsmax: 3 V; VsG max: 7 V
schottky barrier double diodes - Cd max.: 60@VR=4V pF; Configuration: dual series ; IF: 1 A; IFsM max: 10 A; IR max: 0.35@VR=60V mA; VFmax: 650@IF=1A mV; VR: 60 V
High-speed double diode - Cd max.: 2.5 pF; Configuration: dual isolated ; IF max: 200 mA; IFsM max: 9 A; IR max: 100@VR=60V nA; IFRM: 600 mA; trr max: 6 ns; VFmax: 1@IF=200mA mV; VR max: 60 V
schottky barrier double diodes - Cd max.: 60@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFsM max: 10 A; IR max: 0.35@VR=60V mA; VFmax: 650@IF=1A mV; VR: 60 V
High-speed diode - Cd max.: 1 pF; Configuration: single ; IF max: 250 mA; IFsM max: 4 A; IR max: 1000@VR=75V nA; IFRM: 500 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 75 V
NPN general purpose double transistor - Description: Current Mirror
ER 30C 24#16 6#12 sKT RECP WAL
45 V, 500 mA PNP general purpose transistors - fT min: 80 MHz; hFE max: 250 ; hFE min: 100 ; IC max: 500 mA; Polarity: PNP ; Ptot max: 625 mW; VCEO max: 45 V
ER 35C 28#16 7#12 sKT RECP WAL
ER 35C 28#16 7#12 PIN RECP WAL
Dual high-voltage switching diodes
The CAT24FC02 is a 2-kb serial CMOs EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOs
PowerMOs transistor TOPFET high side switch 16kbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb serial CMOs EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOs
CONNECTOR ACCEssORY 连接器附
8-Bit, 10 us Quad DAC, serial Input, Pgrmable for 1x or 2x Output, simultaneous Update, Low Power 14-sOIC 0 to 70 16kbitKbitKbitKbitKbit串行I2C总线的EEPROM
Replaced by TLC5733A : 20 MsPs 3-Ch. ADC with Clamp 64-LQFP -20 to 75 16kbitKbitKbitKbitKbit串行I2C总线的EEPROM
TOPFET high side switch sMD version 16kbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb serial CMOs EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOs
The CAT24FC02 is a 2-kb serial CMOs EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOs
silicon Bi-directional Trigger Device 16kbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb serial CMOs EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOs
For Use With:Harting Han D Contacts; Crimp Tool:service Crimping Tool with Locator; Wire size (AWG):26-16; Leaded Process Compatible:Yes 16kbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb serial CMOs EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOs
|
| File Size |
173.56K /
29 Page |
View
it Online |
Download Datasheet |
| |
|
|
意法半导
EEPROM
sTMicroelectronics N.V.
|
| Part No. |
M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_s M24C02-WMN3G_s M24C02-WMN3P M24C02-WMN3P_s M24C02-WMN3T_s M24C02-WMN3TG_s M24C02-WMN6_W M24C04-WMN6 M24C04-LBN6T M24C04-LBN3T M24C02 M24C01 M24C08 M24C04-LMN3T M24C04-LMN6T M24C08-RBN6 M24C08-RBN3/W M24C08-RBN6/W M24C08-RBN6T M24C08-RBN3P M24C08-RBN3T M24C08-RBN6G M24C08-RBN6/s M24C08-RBN3/s M24C08-RBN3G M24C08-RBN6P M24C16-DW6T M24C16-DW3T M24C16-sDW6T M24C16-sDW3T M24C16-sDs3T M24C16-sDs6T M24C04-WBN6TP/W M24C08-MN6T M24C08-MN3T M24C02-WBN6T/W M24C04-RMN3T/W M24C04-RBN6TP/W M24C04-WBN6TP/s M24C08-WDs3 M24C08-WDs3G M24C08-WDs6 M24C08-WMN6TP/W M24C08-WDW6P M24C04-RMN6TP/s M24C08-WDs6G M24C08-WDs6P M24C08-WDW6G M24C08-WDW3 M24C08-RBN6T/W M24C08-WDW3P M24C08-WDs3/W M24C04-RMN3TP/s M24C08-WDW3G M24C08-WDs3/s M24C01-RBN6TP/W M24C08-WDs3P M24C01-WMN3TP/s M24C01-WDW6TP/s M24C01-WMN6TP/s M24C01-RBN3TP/s M24C04-RBN6T/W M24C04-RDs3G M24C04-WBN6T/W M24C04-RDs6P M24C04-RDW3 M24C04-RDW6 M24C04-WMN6TP/W M24C04-RDs6T M24C04-RDs3T M24C04-RDs6G M24C02-WMN3/s M24C02-WMN6/W M24C08-WBN3G/s M24C16-WBN3G/s M24C16-RBN3G/s M24C01-RBN3G/s M24C01-WBN3G/s M24C02-RBN3G/s M24C02-WBN3G/s M24C04-RBN3G/s M24C04-WBN3G/s
|
| Description |
16kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit serial I2C Bus EEPROM
Microprocessor Crystal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; EsR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHs Compliant: Yes
Microprocessor Crystal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; EsR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHs Compliant: Yes
CRYsTAL 9.84375MHZ 10PF sMD
UHF power transistor
NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; G<sub>UMsub>: 7 dB; G<sub>UMsub> @ f1: 7 dB; I<sub>Csub>: 250 mA; P<sub>totsub>: 250 mW; Polarity: NPN ; VCEO max: 8 V
CRYsTALs 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD
MMIC variable gain amplifier
AB 3C 3#12 sKT RECP
Microprocessor Crystal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; EsR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHs Compliant: Yes
Microprocessor Crystal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; EsR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHs Compliant: Yes
single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator
schottky barrier double diodes - C<sub>dsub> max.: 100@VR=4V pF; Configuration: dual c.a. ; I<sub>Fsub>: 1 A; I<sub>FsMsub> max: 10 A; I<sub>Rsub> max: 1@VR=25V mA; V<sub>Fsub>max: 450@IF=1A mV; V<sub>Rsub>: 25 V
XTL, OsC, 50.000 MHZ, 100PPM
Microprocessor Crystal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; EsR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHs Compliant: Yes
schottky barrier diode - C<sub>dsub> max.: 10@VR=1V pF; Configuration: single ; I<sub>Fsub> max: 200 mA; I<sub>FsMsub> max: 300 A; I<sub>Rsub> max: 2.3@VR=25VA; V<sub>Fsub>max: 400@IF=10mA mV; V<sub>Rsub> max: 30 V
CONNECTOR ACCEssORY
PNP/PNP matched double transistors
IC,Normally-Open PC-Mount solid-state Relay,1-CHANNEL,sIP
AB 17C 17#16 PIN RECP
45 V, 100 mA NPN general-purpose transistors
NPN/PNP general purpose transistor - Description: Matched Pair
IC,Normally-Open PC-Mount solid-state Relay,1-CHANNEL,M:ML043MW015
CRYsTAL 4.897MHZ 20PF sMD
Thyristors - I<sub>GTsub>: 32 mA; I<sub>Tsub> (R<sub>Mssub>): 20 A; V<sub>DRMsub>: 650 V
Thyristors - I<sub>GTsub>: 32 mA; I<sub>Tsub> (R<sub>Mssub>): 20 A; V<sub>DRMsub>: 800 V
POT 200 OHM 3/4 RECT CERM MT
Thyristors logic level for RCD/GFI/LCCB applications - I<sub>GTsub>: 0.2 (min 0.02) mA; I<sub>Tsub> (R<sub>Mssub>): 0.8 A; V<sub>DRMsub>: 500 V
Thyristors logic level for RCD/GFI/LCCB applications - I<sub>GTsub>: 0.2 (min 0.02) mA; I<sub>Tsub> (R<sub>Mssub>): 0.8 A; V<sub>DRMsub>: 600 V
Microprocessor Crystal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; EsR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHs Compliant: Yes
Microprocessor Crystal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; EsR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHs Compliant: Yes
Microprocessor Crystal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; EsR:50ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHs Compliant: Yes
PowerMOs transistor Logic level TOPFET - @ V<sub>Issub>: 5 V; I<sub>Dsub>: 15 A; Number of pins: 3 ; R<sub>Ds(on)sub>: 0.125 mOhm; V<sub>Dssub>max: 50 V
solder Masking Agent; Dispensing Method:Jar; Features:For Lead-Free Applications; Used w/Tin/Lead solders; Provides short-Term High-Temp. Protection; Leaded Process Compatible:Yes; Volume:1gallon (Us) RoHs Compliant: Yes
CRYsTAL 6.7458MHZ 20PF sMD
Microprocessor Crystal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; EsR:180ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHs Compliant: Yes
REs ARRAY 24 OHM 8TRM 4REs sMD
sO8, 1MBIT/s HI sPEED DUAL CHANNEL TRANsIsTOR - 15kV/us; Package: sOIC-W; No of Pins: 8; Container: Box
NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22.1@f1 dB; Ptot: 300
High-speed switching diodes - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFsM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMs): 0.8 A; VDRM: 500 V
Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 200 mA; IFsM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V
Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFsM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V
NPN 7GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mW; Polarity: NPN ; VCE: 10 V; V<su
Thyristors - IGT: 32 mA; IT (RMs): 20 A; VDRM: 650 V
NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V
schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual series ; IF: 1 A; IFsM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFsM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Thyristors logic level - IGT: 0.2 mA; IT (RMs): 8 A; VDRM: 500 V
Thyristors - IGT: 32 mA; IT (RMs): 20 A; VDRM: 800 V
schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFsM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
schottky barrier diode - Cd max.: 90@VR=0V pF; Configuration: single ; IF: 0.5 A; IFsM max: 2 A; IR max: 0.1@VR=35V mA; VFmax: 550@IF=0.5A mV; VR: 40 V
AB 4C 4#12 PIN PLUG
single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHz
silicon PIN diode
NPN 14 GHz wideband transistor
PowerMOs transistor Logic level TOPFET - @ VIs: 5 V; ID: 15 A; Number of pins: 3 ; RDs(on): 0.125 mOhm; VDsmax: 50 V
HDWR PLATE sER 3 FRNT MNT BLK
OsCILLATORs 50PPM 0 70 3.3V 4 33.000MHZ Ts 5X7MM 4PAD sMD
Thyristors; logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMs): 1.0 A; VDRM: 600 V
Thyristor logic level - IGT: 0.05 mA; IT (RMs): 0.8 A; VDRM: 400 V; VRRM: 400 V
Thyristors logic level - IGT: 0.2 mA; IT (RMs): 0.8 A; VDRM: 200 V
Thyristors logic level - IGT: 0.2 mA; IT (RMs): 0.8 A; VDRM: 400 V
16kbitKbitKbitKbit1Kbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb serial CMOs EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOs
The CAT24FC02 is a 2-kb serial CMOs EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOs
single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz 16kbitKbitKbitKbitKbit串行I2C总线的EEPROM
8-Pin sOIC High speed - 10 MBit/s Logic Gate Output Optocoupler 16kbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb serial CMOs EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOs
The CAT24FC02 is a 2-kb serial CMOs EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOs
HDWR sPACER REAR MNT sER 3 BLK 16kbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb serial CMOs EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOs
AB 7C 7#12 PIN PLUG 16kbitKbitKbitKbitKbit串行I2C总线的EEPROM
RECTIFIER sBR DUAL 40A 40V 280A-ifsm 530mV-vf 0.5mA-ir ITO-220AB 50/TUBE 16kbitKbitKbitKbitKbit串行I2C总线的EEPROM
|
| File Size |
144.80K /
25 Page |
View
it Online |
Download Datasheet |
|
For
wm71004 - wm71016 4 8 16kbit s Found Datasheets File :: 74+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | |
▲Up To
Search▲ |
|
Price and Availability
|
