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  self-biased Datasheet PDF File

For self-biased Found Datasheets File :: 1563    Search Time::1.391ms    
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    FPD750SOT343CE EB750SOT343-AH EB750SOT343-BA EB750SOT343-BB EB750SOT343-BC EB750SOT343-BE EB750SOT343-BG FPD750SOT343E F

Filtronic Compound Semiconductors
Part No. FPD750SOT343CE EB750SOT343-AH EB750SOT343-BA EB750SOT343-BB EB750SOT343-BC EB750SOT343-BE EB750SOT343-BG FPD750SOT343E FPD750SOT3431 FPD750SOT343
OCR Text ...umber of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative...
Description LOW NOISE HIGH LINEARITY PACKAGED PHEMT

File Size 489.46K  /  11 Page

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    FPD750SOT89

Filtronic Compound Semiconductors
Part No. FPD750SOT89
OCR Text ...umber of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative...
Description LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

File Size 383.54K  /  8 Page

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    FPD750SOT89CE FPD750SOT89E FPD750SOT891 FPD750SOT89 EB750SOT89E-BB EB750SOT89E-BA EB750SOT89E-BC EB750SOT89E-BE EB750SOT

Filtronic Compound Semi...
Filtronic Compound Semiconductors
Part No. FPD750SOT89CE FPD750SOT89E FPD750SOT891 FPD750SOT89 EB750SOT89E-BB EB750SOT89E-BA EB750SOT89E-BC EB750SOT89E-BE EB750SOT89E-BG EB750SOT89E-AH
OCR Text ...umber of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate Dual-bias circuits are relatively ...
Description    LOW NOISE HIGH LINEARITY PACKAGED PHEMT

File Size 515.64K  /  12 Page

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    HMC902LP3E

Hittite Microwave Corporation
Part No. HMC902LP3E
OCR Text ... vgg1 = vgg2 = open for normal, self-biased operation. for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittit...
Description GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 5 - 10 GHz

File Size 361.05K  /  8 Page

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    NSI45090JD NSI45090JDT4G NSV45090JDT4G

ON Semiconductor
Part No. NSI45090JD NSI45090JDT4G NSV45090JDT4G
OCR Text ...iode, ccd). the ccr is based on self-biased transistor (sbt) technology and regulates current over a wide voltage range. it is designed with a negative temperature coefficient to protect leds from thermal runaway at extreme voltages and cu...
Description Adjustable Constant Current Regulator & LED Driver

File Size 173.58K  /  8 Page

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    NSI45060JDT4G

ON Semiconductor
Part No. NSI45060JDT4G
OCR Text ...iode, ccd). the ccr is based on self-biased transistor (sbt) technology and regulates current over a wide voltage range. it is designed with a negative temperature coefficient to protect leds from thermal runaway at extreme voltages and cu...
Description Adjustable Constant Current Regulator , LED Driver

File Size 171.11K  /  8 Page

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    HMMC-3028

Agilent(Hewlett-Packard)
Part No. HMMC-3028
OCR Text ...le contact pad to eliminate any self-oscillation condition. VCC - VEE VDisable VLogic Pin(CW) VRFin TBS2 Tst Tmax Notes 1. Operation i...biased from either a single positive or single negative supply bias. The backside of the device is n...
Description DC-12 GHz High Efficiency GaAs HBT MMIC Divide-by-8 Prescaler

File Size 783.20K  /  9 Page

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    ATS622LSB ATS672LSB-LN ATS660LSB ATS660LSB06 ATS665LSG

Allegro MicroSystems
Part No. ATS622LSB ATS672LSB-LN ATS660LSB ATS660LSB06 ATS665LSG
OCR Text ...ATS660LSB incorporates patented self-calibration circuitry (U.S. Pat. 5,917,320) that nulls out the effects of installation air gap, ambient...biased field, often 1500 G to 3500 G. For most gear configurations, the back-biased field values cha...
Description True Zero Speed Hall Effect Adaptive Gear Tooth Sensors

File Size 190.91K  /  17 Page

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    BF1009 Q62702-F1613

SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
Part No. BF1009 Q62702-F1613
OCR Text ...stics Forward transconductance (self biased) g fs Cg1ss Cdss G ps F 800 Gps 40 24 2.1 0.9 22 1.4 50 2.5 - mS pF VDS = 9 V, V G2S = 6 V, f = 1 kHz Gate 1-input capacitance (self biased) VDS = 9 V, V G2S = 6 , f = 1 MHz...
Description Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
From old datasheet system
Silicon N-Channel MOSFET Tetrode (For low noise high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network

File Size 32.12K  /  4 Page

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    BF1009S Q62702-F1628 Q62702-C2595 Q62702-C2607 Q62702-C2606

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BF1009S Q62702-F1628 Q62702-C2595 Q62702-C2607 Q62702-C2606
OCR Text ...stics Forward transconductance (self biased) g fs Cg1ss Cdss G ps F 800 Gps 26 18 40 30 2.1 0.9 22 1.4 50 2.7 - mS pF VDS = 9 V, V G2S = 6 V, f = 1 kHz Gate 1-input capacitance (self biased) VDS = 9 V, V G2S = 6 V, f ...
Description NPN Silicon AF Transistors (For AF driver and output stages High collector current)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)
From old datasheet system

File Size 50.66K  /  4 Page

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For self-biased Found Datasheets File :: 1563    Search Time::1.391ms    
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