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schottky-barrier Datasheet PDF File

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				Electronic Theatre Controls, Inc. Agilent (Hewlett-Packard) ETC[ETC] HP[Agilent(Hewlett-Packard)] List of Unclassifed Manufacturers
Part No.	ATF-13786 ATF-13786-STR ATF-13786-TR1 ATF13786
OCR Text	... is a low cost Gallium Arsenide Schottky barrier-gate field effect transistor housed in a surface mount plastic package. This device is designed for use in low cost, surface mount oscillators operating over the RF and microwave frequency ra...
Description	Surface Mount Gallium Arsenide FET for Oscillators
File Size	43.73K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-21186 ATF-21186-STR ATF-21186-TR1
OCR Text	... is a low cost Gallium Arsenide Schottky barrier-gate field effect transistor housed in a surface mount plastic package. This general purpose device is designed for use in low noise amplifiers, gain stages, driver amplifiers, and oscillator...
Description	0.5-6 GHz General Purpose Gallium Arsenide FET
File Size	67.13K / 8 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-44101
OCR Text	...ATF-44101 is a gallium arsenide schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency Electrical Specifications, TA = 25C Symbol P1 dB G1 dB add gm IDSS VP Parameters a...
Description	2-8 GHz Medium Power Gallium Arsenide FET
File Size	60.35K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-45101
OCR Text	...ATF-45101 is a gallium arsenide schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency Electrical Specifications, TA = 25C Symbol P1 dB G1 dB add gm IDSS VP Parameters a...
Description	2-8 GHz Medium Power Gallium Arsenide FET
File Size	40.00K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-45171
OCR Text	...ATF-45171 is a gallium arsenide schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency Electrical Specifications, TA = 25C Symbol P1 dB G1 dB add gm IDSS VP Parameters a...
Description	2-8 GHz Medium Power Gallium Arsenide FET
File Size	39.13K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-46101
OCR Text	...ATF-46101 is a gallium arsenide schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 10 GHz frequency range. This nominally 0.5 micron Electrical Specifications, TA = 25C Symbol P1 dB...
Description	2-10 GHz Medium Power Gallium Arsenide FET
File Size	40.16K / 3 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-46171
OCR Text	...ATF-46171 is a gallium arsenide schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 10 GHz frequency Electrical Specifications, TA = 25C Symbol P1 dB G1 dB add gm IDSS VP Parameters ...
Description	2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)
File Size	39.26K / 3 Page	View it Online	Download Datasheet

				Vishay Telefunken
Part No.	BAS281 BAS283
OCR Text	Schottky Barrier Diodes Features D Integrated protection ring against static discharge D D D D Low capacitance Low leakage current Low forward voltage drop Very low switching time 96 12009 Applications General purpose and swit...
Description	Schottky Barrier Diodes
File Size	51.36K / 4 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG INFINEON TECHNOLOGIES AG
Part No.	BAT14-014 BAT14-034 BAT14-044 BAT14-064 BAT14-074 BAT14-094 BAT14-104 BAT14-114 BAT14-124 BAT14-4 Q62702-D1019 Q62702-D1036 Q62702-D1066 Q62702-D1005 Q62702-D1026 Q62702-D1041 Q62702-D1051 Q62702-D1056 Q62702-D1061 Q62702-P1139
OCR Text	Schottky Diodes q q q BAT 14- ... 4 Medium barrier diodes for detector and mixer applications Hermetical ceramic package For frequencies up to 40 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Typ...
Description	Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) 硅肖特基二极管（培养基检测器和调音台的应用气密陶瓷封装垒二极管） Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters 砷化镓红外Lumineszenzdioden砷化镓红外辐射器
File Size	46.77K / 3 Page	View it Online	Download Datasheet

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