Part Number Hot Search : 
S78DL33 IDT72 210R0G MPC5567 TC442 RTL8201 MC1374P LTC1261
Product Description
Full Text Search
  sc-d Datasheet PDF File

For sc-d Found Datasheets File :: 27253    Search Time::5.094ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    CS5201-3-D

ON Semiconductor
Part No. CS5201-3-D
OCR Text ...in v out 3.5 load step (ma) i sc (a) 300 0 3.3 3.1 2.9 2.7 2.5 2.3 2.1 1.9 1.7 1.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 200 100 0 100 200 1000 50...d (watts) 3. maximum junction temperature t j ( c) 4. thermal resistance junction to ambient r q ...
Description 1.0 A, 3.3V Fixed Linear Regulator

File Size 67.53K  /  8 Page

View it Online

Download Datasheet





    MC34001-D

ON Semiconductor
Part No. MC34001-D
OCR Text ...v open short circuit duration t sc continuous operating ambient temperature range t a 0 to +70 c operating junction temperature t j 150 c...d v io / d t e 10 e m v/ c input offset current (v cm = 0) (note 3) mc3400xb mc3400x i io e e 25 2...
Description JFET Input Operational Amplifiers

File Size 164.33K  /  12 Page

View it Online

Download Datasheet

    MBR0530T1-D

ON Semiconductor
Part No. MBR0530T1-D
OCR Text ...tic sod123 package ...using the sc hottky barrier principle with a large area metaltosilicon power diode. ideally suited for low voltage, hi...d k a c e j 1 2 h dim min max min max millimeters inches a 0.055 0.071 1.40 1.80 b 0.100 0.112 2.55 ...
Description Surface Mount Schottky Power Rectifier

File Size 61.32K  /  4 Page

View it Online

Download Datasheet

    MGP11N60ED-D

ON Semiconductor
Part No. MGP11N60ED-D
OCR Text ...t j = 125 c, r g = 20 w ) t sc 10 s thermal resistance e junction to case igbt e junction to case diode e junction to ambient r q jc...d motorola semiconductor technical data mgp11n60ed igbt & diode in to220 11 a @ 90 c 15 a @ 25 c 6...
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate

File Size 122.69K  /  6 Page

View it Online

Download Datasheet

    SG3526-D

ON Semiconductor
Part No. SG3526-D
OCR Text ...rent (v ref = 0 v) (note 5.) i sc 25 80 125 ma undervoltage lockout reset output voltage (v ref = +3.8 v) 0.2 0.4 v reset output voltag...d f osc d v cc 0.5 1.0 % frequency stability over temperature ( d t j = t low to t high ) d f osc...
Description Pulse Width Modulation Control Circuit

File Size 121.46K  /  12 Page

View it Online

Download Datasheet

    5021TR-D 5021TR-D-1309-FA

Emcore Corporation
Part No. 5021TR-D 5021TR-D-1309-FA
OCR Text ...r, 18 ghz, sma, 1310 nm, 9 dbm, sc/apc 5021tr-d-1309-fa transceiver, 18 ghz, sma, 1310 nm, 9 dbm, fc/apc laser safety order information dc monitor voltages ? photodiode current, pin 6: 1 v/1 ma (into 1 mohm load). proportional to phot...
Description 5021TR-D 18 GHz 1310 nm DFB Transceiver

File Size 688.67K  /  4 Page

View it Online

Download Datasheet

    MGP11N60E-D

ON Semiconductor
Part No. MGP11N60E-D
OCR Text ...t j = 125 c, r g = 20 w ) t sc 10 s thermal resistance e junction to case igbt e junction to ambient r q jc r q ja 1.3 65 c/w maximu...d motorola semiconductor technical data mgp11n60e igbt in to220 11 a @ 90 c 15 a @ 25 c 600 volts ...
Description Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 107.78K  /  6 Page

View it Online

Download Datasheet

    MGP14N60E-D

ON Semiconductor
Part No. MGP14N60E-D
OCR Text ...t j = 125 c, r g = 20 w ) t sc 10 s thermal resistance e junction to case igbt e junction to ambient r q jc r q ja 1.1 65 c/w maximu...d motorola semiconductor technical data mgp14n60e igbt in to220 14 a @ 90 c 18 a @ 25 c 600 volts ...
Description Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 107.80K  /  6 Page

View it Online

Download Datasheet

    MGP21N60E-D

ON Semiconductor
Part No. MGP21N60E-D
OCR Text ...t j = 125 c, r g = 20 w ) t sc 10 s thermal resistance e junction to case igbt e junction to ambient r q jc r q ja 0.9 65 c/w maximu...d motorola semiconductor technical data mgp21n60e igbt in to220 21 a @ 90 c 31 a @ 25 c 600 volts ...
Description Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 109.57K  /  6 Page

View it Online

Download Datasheet

    MGP4N60E-D

ON Semiconductor
Part No. MGP4N60E-D
OCR Text ...t j = 125 c, r g = 20 w ) t sc 10 s thermal resistance e junction to case igbt e junction to ambient r q jc r q ja 2.0 65 c/w maximu...d motorola semiconductor technical data mgp4n60e igbt in to220 4.0 a @ 90 c 6.0 a @ 25 c 600 volts...
Description Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 108.35K  /  6 Page

View it Online

Download Datasheet

For sc-d Found Datasheets File :: 27253    Search Time::5.094ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of sc-d

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
2.2530341148376