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ONSEMI[ON Semiconductor]
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| Part No. |
MGY25N120_D ON1934 MGY25N120
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| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.co... |
| Description |
Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264
IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCuIT RATED
From old datasheet system
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| File Size |
149.81K /
5 Page |
 View
it Online |
Download Datasheet
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Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
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| Part No. |
MGP20N60u
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| OCR Text |
... VGE = 15 Vdc, L = 300 mH, Vd H RG = 20 , TJ = 125C) 125 C) Energy losses include "tail" (VCC = 360 Vd IC = 10 Ad Vdc, Adc, VGE = 15 Vdc, L ...303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.co... |
| Description |
Insulated Gate Bipolar Transistor 31 A, 600 V, N-CHANNEL IGBT, TO-220AB
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| File Size |
116.62K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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