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  pseudomorphic Datasheet PDF File

For pseudomorphic Found Datasheets File :: 271    Search Time::1.328ms    
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    FILTRONIC[Filtronic Compound Semiconductors]
Part No. LP6836
OCR Text ...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 360 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source an...
Description MEDIUM POWER PHEMT

File Size 34.29K  /  2 Page

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    FP100

Filtronic Compound Semicond...
Filtronic Compound Semiconductors
Part No. FP100
OCR Text ...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 um by 100 um Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source ...
Description HIGH PERFORMANCE PHEMT
IC, SMD PROGRAMMABLE TIMER

File Size 32.34K  /  2 Page

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    LPD200P70

FILTRONIC[Filtronic Compound Semiconductors]
Part No. LPD200P70
OCR Text ...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" Ti/Pt/Au gate structure minimizes parasitic gate...
Description PACKAGED HIGH DYNAMIC RANGE PHEMT

File Size 59.66K  /  3 Page

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    RMPA2451 RMPA2451-TB

Fairchild Semiconductor Corporation
Part No. RMPA2451 RMPA2451-TB
OCR Text ...design utilizes our 0.25m power pseudomorphic High Electron Mobility (PHEMT) process. Features * 38% power added efficiency * 29dBm typical output power * Small package outline: 0.28" x 0.28" x 0.07" * Low power mode: 0 dBm Device ...
Description 2.42.5 GHz GaAs MMIC Power Amplifier
2.4-2.5 GHz GaAs MMIC Power Amplifier
ISM Band PA (Partially Matched)

File Size 482.02K  /  7 Page

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    Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-551M4 ATF-551M4-TR2 ATF-551M4-BLK ATF-551M4-TR1
OCR Text pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Features * Very low noise figure and high linearity * Single Supply Enhancement Mode Technology[1] optimized for 3V operation Description Agilent Technologies' ATF-551M4 is a h...
Description ATF-551M4 · Single Voltage E-pHEMT Low Current Low Noise 24dBm OIP3 in MiniPak
Low Noise Enhancement Mode pseudomorphic HEMT in a Miniature Leadless Package

File Size 195.09K  /  24 Page

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    Agilent Technologies
Part No. ATF-35143-BLK DEMO-ATF3X14-32
OCR Text pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-35143 Features * Low Noise Figure * Excellent Uniformity in Product Specifications * Low Cost Surface Mount Small Plastic Package SOT-343 (4 lead SC-70) * Tape...
Description Single stage 2 GHz LNA demonstration board for ATF-3x143 series ultra low noise PHEMTs
TRANSISTOR,HEMT,N-CHAN,5.5V V(BR)DSS,40MA I(DSS),SOT-343R

File Size 465.41K  /  19 Page

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    CFA0103 CFA010306 CFA0103-L1

MIMIX BROADBAND INC
Part No. CFA0103 CFA010306 CFA0103-L1
OCR Text pseudomorphic HEMT 70 Mil Hermetic Package CFA0103 Applications Satellite Receivers Point-to-Point Radio Receivers Commercial Communications Defense Electronics General Description The CFA0103-L series is a family of low noise, h...
Description KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
Low Noise GaAs FETs

File Size 977.49K  /  2 Page

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    EB1500DFN-BA EB1500DFN-BB EB1500DFN-BC EB1500DFN-BE FPD1500DFN_ EB1500DFN-AJ FPD1500DFN

FILTRONIC[Filtronic Compound Semiconductors]
Part No. EB1500DFN-BA EB1500DFN-BB EB1500DFN-BC EB1500DFN-BE FPD1500DFN_ EB1500DFN-AJ FPD1500DFN
OCR Text ...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 750 m Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The recessed and offset Gate structure mi...
Description LOW NOISE HIGH LINEARITY PACKAGED PHEMT

File Size 235.98K  /  10 Page

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For pseudomorphic Found Datasheets File :: 271    Search Time::1.328ms    
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