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  plateau Datasheet PDF File

For plateau Found Datasheets File :: 3832    Search Time::1.937ms    
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    IPD85P04P4L-06

Infineon Technologies AG
Part No. IPD85P04P4L-06
OCR Text ... charge total q g - 80 104 gate plateau voltage v plateau - -3.5 - v reverse diode diode continous forward current 2) i s - - -85 a diode pulse current 2) i s,pulse - - -340 diode forward voltage v sd v gs =0v, i f =-85a, t j =25c - -1 -1.3...
Description OptiMOS-P2 Power-Transistor

File Size 150.89K  /  9 Page

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    IPD85P04P4-07

Infineon Technologies AG
Part No. IPD85P04P4-07
OCR Text ...e charge total q g - 69 89 gate plateau voltage v plateau - -5.5 - v reverse diode diode continous forward current 1) i s - - -85 a diode pulse current 1) i s,pulse - - -340 diode forward voltage v sd v gs =0v, i f =-85a, t j =25c - -1 -1.3...
Description OptiMOS-P2 Power-Transistor

File Size 149.60K  /  9 Page

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    IPP60R125P6 IPA60R125P6 IPW60R125P6 IPX60R125P6

Infineon Technologies AG
Infineon Technologies A...
Part No. IPP60R125P6 IPA60R125P6 IPW60R125P6 IPX60R125P6
OCR Text ... d =14.5a, v gs =0to10v gate plateau voltage v plateau - 6.1 - v v dd =400v, i d =14.5a, v gs =0to10v 1) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to400v 2) c o(...
Description LED Driver IC and Lighting IC
Increased MOSFET dv/dt ruggedness
Metal Oxide Semiconductor Field Effect Transistor

File Size 2,732.11K  /  18 Page

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    IPP60R330P6

Infineon Technologies AG
Part No. IPP60R330P6
OCR Text ...i d =5.6a, v gs =0to10v gate plateau voltage v plateau - 6.1 - v v dd =400v, i d =5.6a, v gs =0to10v 1) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to400v 2) c o(t...
Description LED Driver IC and Lighting IC

File Size 2,868.58K  /  18 Page

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    IPD25CN10NG

Infineon Technologies AG
Part No. IPD25CN10NG
OCR Text ...ate charge total q g -2331 gate plateau voltage v plateau - 5.6 - v output charge q oss v dd =50 v, v gs =0 v -2432nc reverse diode diode continous forward current i s - - 35 a diode pulse current i s,pulse - - 140 diode forward voltage v ...
Description OptiMOS?? Power-Transistor

File Size 700.69K  /  13 Page

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    IPB009N03LG

Infineon Technologies AG
Part No. IPB009N03LG
OCR Text ...charge total q g - 110 146 gate plateau voltage v plateau - 2.9 - v gate charge total q g v dd =15?v, i d =100?a, v gs =0?to?10?v - 227 - nc gate charge total, sync. fet q g(sync) v ds =0.1?v, v gs =0?to?4.5?v - 95 - output charge q oss ...
Description high power thyristor diode

File Size 421.07K  /  9 Page

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    IPA037N08N3G IPA037N08N3G-13

Infineon Technologies AG
Infineon Technologies A...
Part No. IPA037N08N3G IPA037N08N3G-13
OCR Text ... charge total q g - 88 117 gate plateau voltage v plateau - 4.8 - v output charge q oss v dd =40?v, v gs =0?v - 119 158 nc reverse diode diode continous forward current i s - - 75 a diode pulse current i s,pulse - - 300 diode forward volta...
Description high power thyristor diode
   OptiMOS(TM)3 Power-Transistor

File Size 375.77K  /  9 Page

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    Micross Components
Part No. ICE10N73
OCR Text ... q g gate charge total - 82 - v plateau gate plateau voltage - 5 - v reverse diode v sd diode forward voltage - 1.0 1.2 v v gs = 0v, i s = i f t rr reverse recovery time - 423 - ns v rr = 480v, i s = i f , d if /d t = 100 a/s q rr ...
Description N-Channel Enhancement Mode MOSFET

File Size 745.42K  /  4 Page

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    Micross Components
Part No. ICE10N65
OCR Text ... q g gate charge total - 41 - v plateau gate plateau voltage - 5.2 - v reverse diode v sd diode forward voltage - 0.9 1.2 v v gs = 0v, i s = i f t rr reverse recovery time - 332 - ns v rr = 480v, i s = i f , d if /d t = 100 a/s q r...
Description N-Channel Enhancement Mode MOSFET

File Size 760.66K  /  4 Page

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