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For na-bare Found Datasheets File :: 493    Search Time::1.281ms    
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    E909.11

ELMOS Semiconductor AG
Part No. E909.11
OCR Text ...ort office north america elmos na. inc. 32255 northwestern highway, suite 220 farmington hills, mi 48334 (united states) phone: +1 (0) 248 / 8 65 32 00 sales-usa@elmosna.com s ales and application support office korea and japan elmos kor...
Description ULTRA LOW POWER HALIOS?

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    Supertex, Inc.
Part No. AP0332
OCR Text ... off-state output current -8.0 na v o = max. rating, 8 outputs connected in parallel i o(on) on-state output current -15 ma v o = 25v r o(on) on-state output resistance 700 ? i o = -10ma ? r o(on) change in r o(on) with high temperatur...
Description 8 P-Channel Latchable Power MOSFET Array

File Size 48.46K  /  4 Page

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    Supertex, Inc.
Part No. AN0332
OCR Text ...) off-state output current 8.0 na v o = max. rating, 8 outputs connected in parallel i o(on) on-state output current 25 ma v o = 25v r o(on) on-state output resistance 350 ? i o = 10ma ? r o(on) change in r o(on) with high temperature ...
Description 8 N-Channel Latchable Power MOSFET Array

File Size 48.61K  /  4 Page

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    List of Unclassifed Man...
Part No. PDB-C603-3
OCR Text ...nt h = 0, v r = 5 v* 3 5 5 10 na r sh shunt resistance h = 0, v r = 10 mv 18 40 30 60 m w tc r sh r sh temp. coefficient h = 0, v r =...bare, pvc or buss wire leads. *vr = 100 mv on photovoltaic type **vr = 0 v on photovoltaic type pdb-...
Description Silicon Photodiode, Blue Enhanced Solderable Chips

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    AN0332 AN0332CG AN0332ND

SUTEX[Supertex, Inc]
Part No. AN0332 AN0332CG AN0332ND
OCR Text ...se specified) Typ Max 8.0 Unit nA mA 350 0.8 0.05 16.5 3.5 %/C A V V 1.0 A Conditions VO = max. rating, 8 outputs connected in parallel VO = 25V IO = 10mA IO = 10mA Min 25 12 Note: 1. All voltages are referenced to VSS. AC ...
Description 8 N-Channel Latchable Power MOSFET Array

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    Infineon Technologies A...
Part No. IPC014N03L3
OCR Text ... leakage current i gss - 10 100 na v gs =20v, v ds =0v drain-source on- resistance r ds(on) - 10.3 2) 50 3) m w v gs =10v, i d =2.0...baredie r ds(on) ; v gs =10v,whenusedwith4x500mal-wedgedoublestitchbonding 3) limited b...
Description N-channel enhancement mode

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    PCA2002U/AA PCA2002U/10AA

Philips Semiconductors
NXP Semiconductors
Part No. PCA2002U/AA PCA2002U/10AA
OCR Text ...rrent consumption: typically 90 nA * Output pulses for bipolar stepping motors * Five different programmable output periods (1 s to 30 s) * ...bare die; chip in tray bare die; chip on film frame carrier plastic micro flat package; 8 leads (str...
Description 32 kHz watch circuit with programmable output period and pulse width

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    PCA2002CX8/5/1 PCA2002U/10AB/1 PCA2002U/AB/1

NXP Semiconductors
Part No. PCA2002CX8/5/1 PCA2002U/10AB/1 PCA2002U/AB/1
OCR Text ...rrent consumption: typically 90 nA I Output pulses for bipolar stepping motors I Five different programmable output periods (1 s to 30 s) I ...bare die; chip in tray bare die; chip on film frame carrier Version PCA200xU PCA200xU PCA200xCX Type...
Description 32 kHz watch circuit with programmable output period and pulse width

File Size 115.29K  /  25 Page

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    VSC7969YD1 VSC7969YD2 VSC7969WD1B VSC7969WD2A VSC7969WD2B VSC7969 VSC7969W VSC7969WD1A

VITESSE[Vitesse Semiconductor Corporation]
Part No. VSC7969YD1 VSC7969YD2 VSC7969WD1B VSC7969WD2A VSC7969WD2B VSC7969 VSC7969W VSC7969WD1A
OCR Text ...4 VCCS - 0.3 0.5 100 kHz nA 0.8 4 9 3.0 18 6.0 pF dB A A A A V 0.8 V Page 2 (c) VITESSE SEMICONDUCTOR CORPORATION *...Bare Die Descriptions Figure 1: Pad Assignments 1467m (57.2mil) Pad 6 VOUTN Pad 5 SD_ADJ Pad ...
Description 3.125Gb/s integrated transimpedance and limiting amplifier with signal detect. 3.3V supply
3.125Gb/s integrated transimpedance and limiting amplifier with signal detect. 5V supply, VOUTH/VOUTP outputs
3.125Gb/s integrated transimpedance and limiting amplifier with signal detect. 5V supply, VOUTH/IMON outputs

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