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  ms-034 Datasheet PDF File

For ms-034 Found Datasheets File :: 3614    Search Time::1.672ms    
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    SI5476DU

Vishay Siliconix
Part No. SI5476DU
OCR Text .... Pulse test; pulse width v 300 ms, duty cycle v 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratin...
Description N-Channel 60-V (D-S) MOSFET

File Size 108.44K  /  7 Page

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    SUP40N10-30

Vishay Siliconix
Part No. SUP40N10-30
OCR Text ...1.0 60 IF = 30 A, di/dt = 100 A/ms , m 5 0.15 1.5 100 8 0.4 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. w...
Description N-Channel MOSFET
N-Channel 100-V (D-S) 175C MOSFET

File Size 68.25K  /  5 Page

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    Motorola, Inc.
Part No. MJD74C
OCR Text ....3 0.5 1 23 5 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 9. Thermal Response 10 IC, COLLECT...034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --- 0.030 0.050 0.138 --- ...
Description SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS20 WATTS

File Size 197.20K  /  6 Page

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    Infineon Technologies A...
Part No. FP20R06W1E3-B11 FP20R06W1E3-B11-13
OCR Text ...peakcollectorcurrent t p = 1 ms i crm 40 a gesamt-verlustleistung totalpowerdissipation t c = 25c, t vj max = 175c p tot 94,0 ...034 nf kollektor-emitter-reststrom collector-emittercut-offcurrent v ce = 600 v, v ge = 0 v, t...
Description EasyPIM Modul mit Trench

File Size 778.68K  /  12 Page

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    SIB437EDKT

Vishay Siliconix
Part No. SIB437EDKT
OCR Text ...t which r ds(on) is specied 100 ms limited by r ds(on) * 1 ms t single pulse a = 25 c bvdss limited 10 ms 1 s, 10 s dc 100 s document number: 67402 s11-0235-rev. a, 14-feb-11 www.vishay.com 5 vishay siliconix sib437edkt new product typ...
Description P-Channel 8 V (D-S) MOSFET

File Size 174.36K  /  8 Page

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    SJ6004DS2TP

Littelfuse
Part No. SJ6004DS2TP
OCR Text ...2 t value for fusing t p = 8.3 ms 3.7 a 2 s di/dt critical rate of rise of on-state current f = 60 hz, t j = 150 c 50 a/s i gm peak gate...034 0.039 0.044 0.86 1. 0 0 1. 11 r 0.034 0.039 0.044 0.86 1. 0 0 1. 11 s 0.074 0.079 0.084 1.86 2.0...
Description Thyristors 4 Amp High Temperature Sensitive SCRs

File Size 995.12K  /  7 Page

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    SQ4946AEY

Vishay Siliconix
Part No. SQ4946AEY
OCR Text ... * ds(on) i dm limited 100 s 1 ms 10 ms 100 ms 1 s 10 s, dc 2 1 0.1 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 10 600 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are wave p u lse d u ration (s) normalized eff ective transient thermal ...
Description Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET

File Size 253.60K  /  10 Page

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    MCR708A MCR703A MCR705A MCR707A MCR706A MCR703 MCR704 MCR704A

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Part No. MCR708A MCR703A MCR705A MCR707A MCR706A MCR703 MCR704 MCR704A
OCR Text ... TC = +90C) (1/2 Sine Wave, 1.5 ms TC = +90C) Circuit Fusing (t = 8.3 ms) Peak Gate Power (Pulse Width = 10 s, TC = 90C) Average Gate Power ...034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 MILLIMETERS MIN MAX 5.97 6.35 ...
Description Silicon Controlled Rectifiers

File Size 107.56K  /  4 Page

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