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    APT24M120L

Microsemi Corporation
Part No. APT24M120L
OCR Text ...atures ? fast switching with low emi/rfi ? low r ds(on) ? ultra low c rss for improved noise immunity ? low gate charge ? avalanche energy rated ? rohs compliant apt24m120b2 apt24m120l 1200v, 24a, 0.68? max apt...
Description N-Channel MOSFET

File Size 434.87K  /  4 Page

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    IRF3703 IRF3703PBF

International Rectifier
Part No. IRF3703 IRF3703PBF
OCR Text ...l Active ORing Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated VDSS 30V RD...Energy Avalanche Current Repetitive Avalanche Energy Typ. --- --- --- Max. 1700 76 23 Uni...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)

File Size 93.04K  /  8 Page

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    ACS108-6SN ACS108-8SA

STMicroelectronics
Part No. ACS108-6SN ACS108-8SA
OCR Text ...trial control systems ? driving low power high inductive or resistive loads like: ? relay, valve, solenoid, dispenser, ? pump, fan, low pow...energy, and a gate level shifter driver to separate the digital controller from the main switch. i...
Description Overvoltage protected AC switch

File Size 223.08K  /  13 Page

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    IRF3706 IRF3706L IRF3706S

IRF[International Rectifier]
Part No. IRF3706 IRF3706L IRF3706S
OCR Text ...) max 8.5m ID 77A Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current TO-220A...Energy Avalanche Current Typ. --- --- Max. 220 28 Units mJ A Diode Characteristics S...
Description Power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=8.5mohm Id=77A)

File Size 143.52K  /  11 Page

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    Kersemi Electronic Co.,...
Part No. KSM95N03L
OCR Text ...ese devices are well suited for low voltage applications such as dc/dc converters, high efficiency switching for power management in portabl...energy (note 2) 400 mj i ar avalanche current (note 1) 95 a e ar repetitive avalanche energy (note 1...
Description 30V LOGIC N-Channel MOSFET

File Size 1,755.02K  /  6 Page

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    IRHYB67230CM IRHYB67230CM-15

International Rectifier
Part No. IRHYB67230CM IRHYB67230CM-15
OCR Text ...e pre-irradiation features: low r ds(on) fast switching single event effect (see) hardened low total gate charge simpl...energy transfer (let) up to 90mev/(mg/cm 2 ). their combination of very low r ds(on) and faster sw...
Description Simple Drive Requirements

File Size 188.80K  /  9 Page

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    IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
OCR Text ...rn-on Immunity Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current Absolu...Energy Avalanche Current Typ. --- --- Max. 382 30 Units mJ A Diode Characteristics S...
Description Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??

File Size 120.60K  /  11 Page

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    IRF3710L IRF3710S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710L IRF3710S
OCR Text Low-profile through-hole (IRF3710L) 175C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 0.025 G...Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction a...
Description Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.025ohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A)
Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)

File Size 180.61K  /  10 Page

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    IRF3710 IRF3710PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710 IRF3710PBF
OCR Text Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 23m ...Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Tempera...
Description Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 92.57K  /  8 Page

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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ...Turn-on Immunity Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current Absolute M...Energy Avalanche Current Typ. --- --- Max. 460 30 Units mJ A Diode Characteristics S...
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

File Size 243.87K  /  11 Page

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