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  id-9.4a Datasheet PDF File

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    IRF7309 IRF7309TR IRF7309PBF

International Rectifier
Part No. IRF7309 IRF7309TR IRF7309PBF
OCR Text ...m Ratings Parameter N-Channel ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG 10 Sec. Pulse Drain Current, V...9 -55 to + 150 -6.0 Max. P-Channel -3.5 -3.0 -2.4 -12 Units A A A A W W/C V V/ns C Therma...
Description 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

File Size 161.00K  /  8 Page

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    IRF7379

IRF[International Rectifier]
Part No. IRF7379
OCR Text ...Maximum Ratings Parameter VSD ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG Drain-to-Source Voltage Continuous Drain Cur...9 P-Ch -- -- 2.9 N-Ch -- -- 7.9 P-Ch -- -- 9.0 N-Ch -- 6.8 -- P-Ch -- 11 -- N-Ch -- 21 -- P-Ch -- 17...
Description Power MOSFET

File Size 211.55K  /  10 Page

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    ECH8649

Sanyo Semicon Device
Part No. ECH8649
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm20.8mm) 1unit Mounted on a cerami...9 9.4 11 12.5 typ 13 13.5 16 18 1060 180 135 17.5 120 68 80 10.8 2.1 2.9 0.74 1.2 max 17 18 22 26 Un...
Description N-Channel Silicon MOSFET General-Purpose Switching Device

File Size 48.20K  /  4 Page

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    TSM231107 TSM2311 TSM2311CX

Taiwan Semiconductor Company, Ltd
Part No. TSM231107 TSM2311 TSM2311CX
OCR Text ...: 1. Gate 2. Source 3. Drain ID (A) -4.0 -2.5 Features Advance Trench Process Technology High Density Cell Design for Ultra Low On...9 0.57 +150 - 55 to +150 Unit V V A A A W o o C C Thermal Performance Parameter Lead Te...
Description 20V P-Channel MOSFET

File Size 357.70K  /  6 Page

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    AOD608

Alpha & Omega Semiconductors
Part No. AOD608
OCR Text ...) = 40V -40V -10A (V GS = -10V) ID = 10A (V GS=10V) RDS(ON) RDS(ON) < 39 m (VGS=10V) < 51 m (VGS = -10V) < 50 m (VGS=4.5V) < 75 m (VGS = -...9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistanc...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 208.17K  /  9 Page

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    SSM04N70BGF-A

Silicon Standard Corp.
Part No. SSM04N70BGF-A
OCR Text ID DESCRIPTION The SSM04N70BGF-A achieves fast switching performance with low gate charge without a complex drive circuit. It is suitabl...9/12/2006 Rev.3.1 www.SiliconStandard.com 1 of 5 SSM04N70BGF-A ELECTRICAL CHARACTERISTICS ...
Description N-channel Enhancement-mode Power MOSFET

File Size 544.43K  /  5 Page

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    TPD1046F

Toshiba Semiconductor
Part No. TPD1046F
OCR Text ... (ON) = 0.2 (max) (@VIN = 5 V, ID = 1 A, Tch = 25C) Low Leakage Current: IDSS = 10 A (max) (@VIN = 0 V, VDS = 30 V, Tch = 25C) Low Input Cu...9 4 Typ. 49 1.6 130 Max 60 60 2.8 3.0 7 10 30 600 600 A 2000 Unit V Input threshold voltage Prote...
Description 2-IN-1 Low-Side Power Switch for Motor, Solenoid and Lamp Drive

File Size 276.12K  /  11 Page

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    SSM04N70BGF-H

Silicon Standard Corp.
Part No. SSM04N70BGF-H
OCR Text ID DESCRIPTION The SSM04N70BGF-H achieves fast switching performance with low gate charge without a complex drive circuit. It is suitabl...9/12/2006 Rev.3.1 www.SiliconStandard.com 1 of 5 SSM04N70BGF-H ELECTRICAL CHARACTERISTICS ...
Description N-channel Enhancement-mode Power MOSFET

File Size 545.03K  /  5 Page

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    SSM04N70BGP-A

Silicon Standard Corp.
Part No. SSM04N70BGP-A
OCR Text ID DESCRIPTION The SSM04N70BGP-A achieves fast switching performance with low gate charge without a complex drive circuit. It is suitabl...9/29/2006 Rev.3.1 www.SiliconStandard.com 1 of 7 SSM04N70BGP-A ELECTRICAL CHARACTERISTICS ...
Description N-channel Enhancement-mode Power MOSFET

File Size 617.21K  /  7 Page

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