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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FU-627SLD-F1
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| OCR Text |
...**Facet selective-growth buried heterostructure APPLICATION Trunk Line,FitL
ABSOLUTE MAXIMUM RATINGS Parameter Laser diode
(Tc=25 C) Symbol Conditions CW Rating 2.4 Unit mW
Optical output Pf power from fib er end Reverse voltage Vr... |
| Description |
1.55 um LD MODULE WITH SINGLEMODE FIBER PIGTAIL
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| File Size |
41.54K /
3 Page |
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HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
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| Part No. |
HFCT-5905E HFCT-5905 HFBR-0561
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| OCR Text |
...ansmitter section uses a buried heterostructure Fabry Perot laser as its optical source. The package of this laser is designed to allow repeatable coupling into single mode fiber. In addition, this package has been designed to be compliant ... |
| Description |
Agilent HFCT-5905E MT-RJ Duplex Single Mode Transceiver
Agilent HFCT-5905E MT-RJ Duplex Single Mode Transceiver
HFBR-0561 · Evaluation Kit for MT-RJ 155 Mb/s Multimode and Singlemode ATM Applications
HFCT-5905E · 155 Mbit/s SMF (15km) SFF Transceiver for SONET/SDH, ATM (OC-3)
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| File Size |
153.59K /
12 Page |
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SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
SGA-8543Z
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| OCR Text |
heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 3.5 GHz. The SGA-8543Z is optimized for 3.3V operation but can be biased at 2.7V for low-voltage battery operated systems. The device provides low NF and excell... |
| Description |
High IP3 Medium Power Discrete SiGe Transistor
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| File Size |
98.30K /
4 Page |
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SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
SGA-9089Z
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| OCR Text |
heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 4.0 GHz. The SGA-9089Z is optimized for 3.0V operation. The device provides excellent linearity at a low cost. It can be operated over a wide range of currents ... |
| Description |
High IP3 Medium Power Discrete SiGe Transistor
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| File Size |
150.10K /
4 Page |
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it Online |
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SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
SHF-0186
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| OCR Text |
heterostructure FET (HFET) housed in a low-cost surfacemount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB compr... |
| Description |
0.05-12 GHz, 0.5 Watt GaAs HFET
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| File Size |
725.78K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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