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  f1.4db Datasheet PDF File

For f1.4db Found Datasheets File :: 103    Search Time::1.187ms    
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    Maxim Integrated Products, Inc.
Part No. MAX2442 MAX2441
OCR Text ... tones at p rxin = -45dbm each, f1 = 915.0mhz and f2 = 915.2mhz. note 9: time delay from rxon = 0.45v to rxon = 2.4v transition to the time the output envelope reaches 90% of its final value. note 10: refers to useable operating range. tuni...
Description 900MHz Image Reject Receivers

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    MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Part No. MAX2442EAI MAX2440 MAX2440EAI MAX2441 MAX2441EAI MAX2442
OCR Text ...o tones at PRXIN = -45dBm each, f1 = 915.0MHz and f2 = 915.2MHz. Note 9: Time delay from RXON = 0.45V to RXON = 2.4V transition to the time the output envelope reaches 90% of its final value. Note 10: Refers to useable operating range. Tuni...
Description 900MHz Image-Reject Receivers

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    RFMD[RF Micro Devices]
Part No. RF3223PCBA-41X RF3223
OCR Text ...MHz dB SWR SWR dBm dBm dB C/W C F1 = 850MHz, F2 =851MHz 4.0 Thermal ThetaJC Maximum Measured Junction Temperature at DC Bias Conditions Mean Time To Failures ICC =160mA, PDISS =0.913W. (See Note) TCASE =+85C TCASE =+85C 5500 ...
Description HIGH LINEARITY/DRIVER AMPLIFIER

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    BC184LB

Continental Device India Limited
Part No. BC184LB
OCR Text ...lat side mechanical data t t1 t f1 f2 f p2 po do (p) w2 wo w1 w h1 a a1 p h0 l flat side of transistor and adhesive tape visible 2000 pcs./ammo pack label carrier strip 183 mm 3 3 1 m m f e e d 4 2 m m h h to-92 bulk to-92 t&a 1k/polybag 2k...
Description 0.350W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 100 - hFE
IC FLEX 10KA FPGA 100K 240-RQFP

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    C2304 C2304TR

List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Part No. C2304 C2304TR
OCR Text ...ain and Output IP3 vs. LO Power F1=2.59 GHz and F2=2.596 GHz 26 IP3 (dBm) Gain (dB), 24 Gain (dB) 22 IP3 Conv. gain 20 18 23 22 2.45 2.5 2.55 2.6 2.65 2.7 RF Freq (GHz) 16 -6 -4 -2 0 2 LO Power (dBm) 4 6 8 10 0 IF Outpu...
Description MMDS / ISM / S-Band Downconverter

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    RFMD[RF Micro Devices]
Part No. RF3330_06 RF3330 RF3330PCBA-41X RF333006
OCR Text ... C4* DNI J2 VIN (BAL) F1* 7 C7 100 nF C8 100 nF J3 VIN (BAL) 50 strip 50 strip 6 5 J5 VOUT (BAL) J1 VIN (UN...4dB Eq. 3 Rev A4 060908 3-141 RF3330 Output On the output, the losses due to the resistive...
Description IF GAIN CONTROLLED AMPLIFIER

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    RF32231

RF Micro Devices
Part No. RF32231
OCR Text ...5 1.7 MHz dB SWR SWR dBm dBm F1 = 850MHz, F2 =851MHz 4.0 dB ICC =160mA, PDISS =0.913W. (See Note) C/W C TCASE =+85C TCASE =+85C ICC =160mA VCC =5V Thermal ThetaJC Maximum Measured Junction Temperature at DC Bias Conditions Mean...
Description HIGH LINEARITY/DRIVER AMPLIFIER

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    RF3330 RF3330PCBA

RF Micro Devices, Inc.
RFMD[RF Micro Devices]
Part No. RF3330 RF3330PCBA
OCR Text ...0 strip C7 100 nF C8 100 nF F1* 7 6 5 Biasing & AGC Control 1 2 3 4 R4 470 R2 470 R3 51 6 5 4 R1* DNI J3 VIN (BAL) 5...4dB Eq. 3 Rev A2 010820 3-7 RF3330 Output On the output, the losses due to the resistive m...
Description IF GAIN CONTROLLED AMPLIFIER 中频增益控制放大
IF GAIN CONTROLLED AMPLIFIER RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER

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    PHILIPS[Philips Semiconductors]
Part No. SA620DK SA620
OCR Text ... 100MHz 900MHz 900MHz 900MHz f2-f1 = 1MHz, 900MHz 900MHz 900MHz 900MHz 900MHz 900MHz 900MHz 300 (min) Offset = 60kHz -105 -7.5 7.5 14.5 1.5 ...4dB. However, the return loss can be improved at 900MHz using suggested L/C elements (Figure NO TAG)...
Description Low voltage LNA mixer and VCO - 1GHz
Low voltage LNA, mixer and VCO - 1GHz

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