| |
|
 |
ONSEMI[ON Semiconductor]
|
| Part No. |
MMT08B064T3G MMT08B064T3
|
| OCR Text |
...t Current Non-Repetitive Double exponential Decay Waveform (-25C Initial Temperature) (Notes 1 and 2) 2 x 10 msec 8 x 20 msec 10 x 160 msec 10 x 360 msec 10 x 560 msec 10 x 700 msec 10 x 1000 msec Nonrepetitive Peak On-State Current 60 Hz F... |
| Description |
From old datasheet system
Thyristor Surge Protectors
|
| File Size |
46.50K /
6 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
ONSEMI[ON Semiconductor]
|
| Part No. |
MMT08B310T3_05 MMT08B310T3 MMT08B310T3G MMT08B310T305
|
| OCR Text |
...t Current Non-Repetitive Double exponential Decay Waveform (Notes 1 and 2) 10 x 1000 sec (-25C Initial Temperature) 8 x 20 sec 10 x 160 sec 10 x 560 sec Maximum Non-Repetitive Rate of Change of On-State Current Double exponential Waveform, ... |
| Description |
Thyristor Surge Protectors High Voltage Bidirectional TSPD
|
| File Size |
54.57K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| Part No. |
RBO08-40T RBO08-40G RBO08-40M
|
| OCR Text |
...ig. 1 : Peak pulse power versus exponential pulse duration (Tj initial = 85C).
Fig. 2-1 : Clamping voltage versus peak pulse current (Tj initial = 85C). exponential waveform tp = 40 ms and tp = 1 ms (TRANSIL T2).
VCL (V) 45 40
Pp p (... |
| Description |
REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO
REVERSED BATTERYAND OVER VOLTAGE PROTECTION CIRCUIT (RBO)
|
| File Size |
153.20K /
14 Page |
View
it Online |
Download Datasheet |
| |
|
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| Part No. |
RBO08-40T RBO08-40G RBO08-40G_03 RBO08 RBO08-40G03
|
| OCR Text |
...ig. 1 : Peak pulse power versus exponential pulse duration (Tj initial = 85C).
Fig. 2-1 : Clamping voltage versus peak pulse current (Tj initial = 85C). exponential waveform tp = 40 ms and tp = 1 ms (TRANSIL T2).
VCL(V) 45 40
Pp p (k... |
| Description |
REVERSED BATTERY AND OVERVOLTAGE PROTECTION CIRCUIT (RBO)
|
| File Size |
300.33K /
9 Page |
View
it Online |
Download Datasheet |
| |
|
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| Part No. |
RBO40-40T RBO40-40G RBO40-40M
|
| OCR Text |
...ig. 1 : Peak pulse power versus exponential pulse duration (Tj initial = 85C).
Fig. 2-1 : Clamping voltage versus peak pulse current (Tj initial = 85C). exponential waveform tp = 40 ms and tp = 1 ms (TRANSIL T2).
Ppp(kW)
VCL(V)
... |
| Description |
REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO
|
| File Size |
164.58K /
15 Page |
View
it Online |
Download Datasheet |
| |
|
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| Part No. |
RBO40-40T RBO40 RBO40-40G RBO40-40G-TR
|
| OCR Text |
...ig. 1 : Peak pulse power versus exponential pulse duration (Tj initial = 85C).
Fig. 2-1 : Clamping voltage versus peak pulse current (Tj initial = 85C). exponential waveform tp = 40 ms and tp = 1 ms (TRANSIL T2).
Ppp(kW)
VCL(V)
... |
| Description |
REVERSED BATTERY AND OVERVOLTAGE PROTECTION CIRCUIT (RBO) 电池接反和过压保护电路（基于规则的优化器
|
| File Size |
266.43K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
Kersemi Electronic Co.,...
|
| Part No. |
MAC4DSM
|
| OCR Text |
...ge (v d = 0.67 x rated v drm , exponential waveform, gate open, t j = 125 c) dv/dt 50 175 ? v/ s 2. these ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8 from case for 10 seconds. 4. pulse tes... |
| Description |
Silicon Bidirectional Thyristors
|
| File Size |
463.21K /
8 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
