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IDT
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| Part No. |
IDT74FCT162823CT IDT74FCT162823AT
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| OCR Text |
...D at fi = 2.5MHz 50% Duty Cycle eighteen Bits Toggling VIN = VCC VIN = GND Min. -- -- Typ.(2) 0.5 75 Max. 1.5 120 Unit mA A/ MHz
IC
Total Power Supply Current(6)
VIN = VCC VIN = GND
--
0.8
1.7
mA
VIN = 3.4V VIN = GND... |
| Description |
FAST CMOS 18-BIT REGISTER
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| File Size |
68.41K /
7 Page |
 View
it Online |
Download Datasheet
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IDT
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| Part No. |
IDT74FCT162H501CT IDT54FCT162H501CT
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| OCR Text |
...le OEAB = OEBA = VCC LEAB = GND eighteen Bits Toggling fi = 2.5MHz 50% Duty Cycle Min. -- -- Typ.(2) 0.5 75 Max. 1.5 120 Unit mA A/ MHz
VIN = VCC VIN = GND
IC
Total Power Supply Current(6)
VIN = VCC VIN = GND
--
0.8
1.7... |
| Description |
FAST CMOS 18-BIT REGISTERED TRANSCEIVER
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| File Size |
65.23K /
7 Page |
View
it Online |
Download Datasheet |
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IDT
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| Part No. |
IDT74FCT163501C IDT74FCT163501A IDT74FCT163501CPF
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| OCR Text |
... GND fI = 2.5MHz 50% Duty Cycle eighteen Bits Toggling
NOTES: 1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 3.3V, +2... |
| Description |
BUS TRANSCEIVER|SINGLE|18-BIT|FCT/PCT-CMOS|TSSOP|56PIN|PLASTIC
3.3V CMOS 18-BIT REGISTERED TRANSCEIVER
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| File Size |
74.18K /
7 Page |
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it Online |
Download Datasheet |
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IDT
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| Part No. |
IDT74FCT16501CT IDT74FCT16501AT
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| OCR Text |
...le OEAB = OEBA = VCC LEAB = GND eighteen Bits Toggling fi = 2.5MHz 50% Duty Cycle Min. -- VIN = VCC VIN = GND -- Typ.(2) 0.5 75 Max. 1.5 120 Unit mA A/ MHz
IC
Total Power Supply Current(6)
VIN = VCC VIN = GND
--
0.8
1.7
... |
| Description |
FAST CMOS 18-BIT REGISTERED TRANSCEIVER
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| File Size |
65.15K /
7 Page |
View
it Online |
Download Datasheet |
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Fujitsu
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| Part No. |
MB8516S072CG-100L MB8516S072CG-100
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| OCR Text |
...ry (SDRAM) Module consisting of eighteen MB81F64842C devices which organized as four banks of 8 M x 8 bits and a 2K-bit serial EEPROM on a 168-pin glass-epoxy substrate. The MB8516S072CG features a fully synchronous operation referenced to ... |
| Description |
16 M x 72 BIT SYNCHRONOUS DYNAMIC RAM DIMM
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| File Size |
333.37K /
20 Page |
View
it Online |
Download Datasheet |
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Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
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| Part No. |
HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HYM64V4045GU-50 Q67100-Q2187 HYM64V4005GU-50 HYM64V4005GU-60 HYM72V4005GU-50 HYM72V4005GU-60 Q67100-Q2184 Q67100-Q2185 Q67100-Q2186
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| OCR Text |
...or the 4M x 64 organisation and eighteen 4M x 4 DRAMs for the 4M x 72 organisation, both in TSOPII packages. Decoupling capacitors are mounted on the PC board. The DIMMs use optional serial presence detects implemented via a serial E 2PROM ... |
| Description |
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
4M x 72 Bit ECC DRAM Module unbuffered
4M x 64 Bit DRAM Module unbuffered
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组
GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
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| File Size |
94.87K /
17 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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