Part Number Hot Search : 
MT338230 2SD874 EDZ22B IRFR420A EDI7F S13001 PCA9553 MMBZ5258
Product Description
Full Text Search
  diode.0a Datasheet PDF File

For diode.0a Found Datasheets File :: 11392    Search Time::1.593ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    SKW20N60HS SKW20N60HS08

Infineon Technologies AG
Part No. SKW20N60HS SKW20N60HS08
OCR Text ... 600v, t j 150 c - 80 diode forward current t c = 25 c t c = 100 c i f 40 20 diode pulsed current, t p limited by ...0a 1 0a 2 0a 3 0a 4 0a 5 0a 6 0a 7 0a 8 0a t c =110c t c =80c i c , collector current 1v 10v 100v...
Description High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

File Size 346.23K  /  14 Page

View it Online

Download Datasheet





    Mitsubishi Electric Corporation
Part No. QM200HA-2H
OCR Text ...n collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minu...0a i b =0.4a i b =4.0a i b =0.2a i b =2.0a 1 10 0 10 7 5 4 3 2 ? 10 7 5 4 3 2 1.8 2.2 2.6 3.0...
Description MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE

File Size 72.94K  /  5 Page

View it Online

Download Datasheet

    SGP20N60HS SGW20N60HS

INFINEON[Infineon Technologies AG]
Part No. SGP20N60HS SGW20N60HS
OCR Text ...nergy losses include "tail" and diode reverse recovery. 18 15 207 13 0.39 0.30 0.69 mJ ns Symbol Conditions Value min. typ. max. Unit Swi...0A 10Hz TC=110C IC, COLLECTOR CURRENT 15s 10A 50s 200s 1A 1ms Ic Ic DC 0,1A 1V 100Hz...
Description High Speed IGBT in NPT-technology

File Size 429.45K  /  12 Page

View it Online

Download Datasheet

    SKW20N60 Q67040-S4242

INFINEON[Infineon Technologies AG]
Part No. SKW20N60 Q67040-S4242
OCR Text diode * 75% lower Eoff compared to previous generation combined with low conduction losses * Short circuit withstand time - 10 s * Designed...0A 10Hz TC=110C TC=80C 10A 50s 200s 1A 1ms Ic 0.1A 1V 10V 100V DC 100Hz 1kHz 1...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 272.85K  /  14 Page

View it Online

Download Datasheet

    Philips
Part No. 74LVC1G38 74LVC1G38GV 74LVC1G38GW 74LVC1G38GM
OCR Text ...voltage - 0.5 +6.5 v i ik input diode current v i <0v - - 50 ma v i input voltage [1] - 0.5 +6.5 v i ok output diode current v o >v cc or v...0a; v cc = 5.5 v - 0.1 10 m a d i cc additional quiescent supply current per pin v i =v cc - 0.6 v; ...
Description 74LVC1G38; 2-input NAND gate (open drain)

File Size 66.75K  /  14 Page

View it Online

Download Datasheet

    WTC2312

Weitron Technology
Part No. WTC2312
OCR Text ...apacitance - - - pf wtc2312 a diode forward current i s - 1.7 - 3/6 rev.b 04-aug-09 weitron http://ww w .weit r on.com.tw switching t d (...0a, r g =6 v gen =4.5v, v dd =10v,i d =1.0a, r g =6 v gen =4.5v, v dd =10v,i d =1.0a, r g =6 v ge...
Description N-Channel Enhancement Mode Power MOSFET

File Size 1,166.15K  /  6 Page

View it Online

Download Datasheet

    ZXMN10A07Z ZXMN10A07ZTA

Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
Part No. ZXMN10A07Z ZXMN10A07ZTA
OCR Text ...Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25C (a) Linear Derating Factor P...0A V DD =50V, I D =1.0A R G =6.0 , V GS =10V 0.95 V ns nC T J =25C, I S =1.5A, V GS =0V T J...
Description TV 6C 6#20 SKT PLUG RECP 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
100V N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 949.98K  /  7 Page

View it Online

Download Datasheet

    Fortune
Part No. FS9721-LP3
OCR Text ...uty cycle: 0.1% ? 99.9%. 3.9 diode: 0v ? 1.5 v. 3.10 open-short test: sound when lower than 50 . 4. application field 4.1 auto measurement palm digital multimeter. 4.2 auto measurement card digital multimeter. 4.3 auto ...
Description 4000 Counts Auto Range DMM IC

File Size 768.51K  /  33 Page

View it Online

Download Datasheet

    IRLU014NPBF IRLR014NPBF

International Rectifier, Corp.
Part No. IRLU014NPBF IRLR014NPBF
OCR Text ...che energy 2.8 mj dv/dt peak diode recovery dv/dt 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range so...0a, di/dt 210a/s, v dd v (br)dss , t j 175c notes: parameter min. typ. max. units ...
Description HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) = 0.14, ID = 10A ) HEXFET功率MOSFET(减振钢板基本\u003d 55V的,的RDS(on)\u003d 0.14ヘ,身份证\u003d 10A条)

File Size 275.75K  /  11 Page

View it Online

Download Datasheet

For diode.0a Found Datasheets File :: 11392    Search Time::1.593ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of diode.0a

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
2.9786360263824