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B8850 HSMA5818 NTE15 50A02MH C100LVE SMP402SC M65575FP KBPC10
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    60APU04 60EPU04

IRF[International Rectifier]
Part No. 60APU04 60EPU04
OCR Text ....4 375 1120 60 nC A ns IF = 1A, dif/dt = 200A/s, VR = 30V TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C IF = 60A VR = 200V dif /dt = 200A/s IRRM Peak Recovery Current - Qrr Reverse Recovery Charge - Thermal -...
Description 400V 60A Ultra-Fast Discrete Diode in a TO-247 (2 LEAD) package
Ultrafast Soft Recovery Diode
AB 5C 5#12 PIN PLUG
CONNECTOR ACCESSORY

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    60APU06PBF 60EPU06PBF 60APU06 60EPU06

IRF[International Rectifier]
Part No. 60APU06PBF 60EPU06PBF 60APU06 60EPU06
OCR Text ....0 300 1394 45 nC A ns IF = 1A, dif/dt = 200A/s, VR = 30V TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C IF = 60A VR = 200V dif /dt = 200A/s IRRM Peak Recovery Current - Qrr Reverse Recovery Charge - Thermal -...
Description Ultrafast Soft Recovery Diode

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    NB3N1200KMNTXG NB3W1200LMNTXG NB3W1200LMNG

ON Semiconductor
Part No. NB3N1200KMNTXG NB3W1200LMNTXG NB3W1200LMNG
OCR Text ...ed block diagram iref** fb_out* dif_[11:0] control logic clk_in ssc compatible pll 12 sa_0 sa_1 sda scl mux * fb_out pins are for nb3n1200k only; they are nc for nb3w1200l ** iref pin is for nb3n1200k only; it is nc for nb3w1200l 100m_133m#...
Description differential 1:12 HCSL or Push-Pull Clock ZDB/Fanout Buffer for PCle

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    APT33GF120B2RD APT33GF120LRD

Advanced Power Technology Ltd.
Part No. APT33GF120B2RD APT33GF120LRD
OCR Text ...Qrr2 Vfr1 Vfr2 diM/dt IF = 30A, dif /dt = -240A/s, VR = 650V (See Figure 10) Characteristic TYP MAX UNIT PR EL Reverse Recovery Time, IF = 1.0A, dif /dt = -15A/s, VR = 30V, TJ = 25C Reverse Recovery Time IF = 30A, dif /dt = -240A/s...
Description Fast IGBT & FRED 1200V 52A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBTis a new generation of high voltage power IGBTs.

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    LAPIS SEMICONDUCTOR CO LTD
Part No. F3647R-LC-B F3647R-SC-B
OCR Text ...ensitivity : -27.5db m ty p. dif f erential tr ansi m p edanc e : 12k ? t yp. low power consum ption: 0.1w t y p. electric a l isolation between signal gnd and a recepta cle adjustable d c offset (ey e cross-point control) pk...
Description FIBER OPTIC RECEIVER, 1250-1600nm, 10000Mbps, LC CONNECTOR

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    BYC10-600

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BYC10-600
OCR Text ... 100 C IF = 10 A to VR = 400 V; dif/dt = 500 A/s IF = 10 A to VR = 400 V; dif/dt = 500 A/s; Tj = 125C IF = 10 A to VR = 400 V; dif/dt = 500 A/s; Tj = 125C IF = 10 A; dif/dt = 100 A/s MIN. TYP. 1.4 1.7 2.0 9 1.1 19 32 9.5 8 BYC10-600 M...
Description    Rectifier diode ultrafast, low switching loss
Rectifier diode ultrafast/ low switching loss

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    BSO615 BSO615C BSO615CT

Infineon Technologies A...
Infineon Technologies AG
Part No. BSO615 BSO615C BSO615CT
OCR Text ... = 100 A/s VR = -30 V, IF=l S , dif/dt = -100 A/s Reverse recovery charge Qrr N P 105 180 C VR = 30 V, IF=l S , dif/dt = 100 A/s VR = -30 V, I F=lS, dif/dt = -100 A/s Page 4 1999-10-28 Preliminary data Power Dissipation ...
Description Low Voltage MOSFETs - SIPMOS, Complementary, 60V, SO-8, RDSon(N/P) = 0.11/0.30Ohm, Id(N) = 3.2A, Id(P) = -2.0A, LL
SIPMOS Small-Signal-Transistor SIPMOS小信号晶体管

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    BSO315C Q67041-S4014

Infineon Technologies AG
Part No. BSO315C Q67041-S4014
OCR Text ... = 100 A/s VR = -15 V, IF=l S , dif/dt = -100 A/s Reverse recovery charge Qrr N P 18 55 C VR = 15 V, IF=l S , dif/dt = 100 A/s VR = -15 V, I F=lS, dif/dt = -100 A/s Page 4 1999-09-22 Preliminary data Power Dissipation (N...
Description Dual N- and P-Channel SIPMOS Small-Si...
SIPMOS Small-Signal-Transistor

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    ANALOG DEVICES INC
Part No. D7934-6BRU
OCR Text ...o ws t h e us er t o s e t up dif f er en t o p er a t in g co ndi t i o n s in cl u d in g ana l og in p u t ra n g e and co nf igura t ion, o u t p u t co d i ng, p o w e r ma na ge m e n t and cha n n e l s e q u e n ci n g . ...
Description 4-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDSO28

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