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  di dt200a Datasheet PDF File

For di dt200a Found Datasheets File :: 137    Search Time::0.89ms    
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    HFS8N65S

SemiHow Co.,Ltd.
Part No. HFS8N65S
OCR Text ...5, Starting TJ =25C 3. ISD7.2A, di/dt200a/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature SEMIHOW REV.A0,Sep 2009 HFS8N65S Typical Characterist...
Description 650V N-Channel MOSFET

File Size 784.25K  /  7 Page

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    IPB60R199CP IPB60R199CP09

Infineon Technologies AG
Infineon Technologies A...
Part No. IPB60R199CP IPB60R199CP09
OCR Text ...V ns C A V R=400 V, I F=I S, di F/dt =100 A/s - J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes a...dt200a/s, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch. 5) ...
Description CoolMOS Power Transistor

File Size 313.99K  /  10 Page

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    IPI60R165CP

Infineon Technologies AG
Part No. IPI60R165CP
OCR Text ...V ns C A V R=400 V, I F=I S, di F/dt =100 A/s - J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes a...dt200a/s,VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch. C o(er) is...
Description CoolMOS Power Transistor

File Size 258.45K  /  10 Page

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    IPI60R199CP IPI60R199CP08

Infineon Technologies AG
Part No. IPI60R199CP IPI60R199CP08
OCR Text ... Q rr I rrm V R=400 V, I F=I S, di F/dt =100 A/s V GS=0 V, I F=9.9 A, T j=25 C 0.9 340 5.5 33 1.2 V ns C A Q gs Q gd Qg V plateau V DD=400 V...dt200a/s, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch. C o(er) i...
Description CoolMOS Power Transistor

File Size 298.27K  /  10 Page

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    IPI60R250CP

Infineon Technologies AG
Part No. IPI60R250CP
OCR Text ...V ns C A V R=400 V, I F=I S, di F/dt =100 A/s - J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes a...dt200a/s, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch. C o(er) i...
Description CoolMOSTM Power Transistor

File Size 272.63K  /  10 Page

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    IPW60R165CP IPW60R165CP08

Infineon Technologies AG
Part No. IPW60R165CP IPW60R165CP08
OCR Text ...V ns C A V R=400 V, I F=I S, di F/dt =100 A/s - J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes a...dt200a/s, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch. C o(er) i...
Description CoolMOS庐 Power Transistor Features Lowest figure-of-merit RONxQg Ultra low gate charge

File Size 584.42K  /  11 Page

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    HFW11N40

SemiHow Co.,Ltd.
Part No. HFW11N40
OCR Text ..., Starting TJ =25C 3. ISD11.4A, di/dt200a/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature SEMIHOW REV.A0,Dec 2005 HFW11N40 Typical Characterist...
Description 400V N-Channel MOSFET

File Size 943.00K  /  7 Page

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    HFP8N60S

SemiHow Co.,Ltd.
Part No. HFP8N60S
OCR Text ...5, Starting TJ =25C 3. ISD7.5A, di/dt200a/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature SEMIHOW REV.A0,Dec 2006 HFP8N60S Typical Characterist...
Description 600V N-Channel MOSFET

File Size 868.96K  /  8 Page

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    HFS5N65S

SemiHow Co.,Ltd.
Part No. HFS5N65S
OCR Text ...5, Starting TJ =25C 3. ISD4.2A, di/dt200a/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature SEMIHOW REV.A0,Oct 2009 HFS5N65S Typical Characterist...
Description 650V N-Channel MOSFET

File Size 774.03K  /  7 Page

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    HFS2N65S

SemiHow Co.,Ltd.
Part No. HFS2N65S
OCR Text ...5, Starting TJ =25C 3. ISD1.8A, di/dt200a/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature SEMIHOW REV.A0,Sep 2009 HFS2N65S Typical Characteristi...
Description 650V N-Channel MOSFET

File Size 907.00K  /  7 Page

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For di dt200a Found Datasheets File :: 137    Search Time::0.89ms    
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