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				International Rectifier
Part No.	IRF530L IRF530NS IRF530NL
OCR Text	... 25C, I F = 9.0A --- 650 970 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; ...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
File Size	174.65K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7106 IRF7106TR
OCR Text	... 69 100 T J = 25C, I F = 1.25A, di/dt = 100A/s -- 58 120 nC P-Channel T J = 25C, I F = -1.25A, di/dt = 100A/s -- 91 180 Intrinsic turn-on time is neglegible (turn-on is dominated by L S+LD) Notes: Repetitive rating; pulse width limited b...
Description	20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss= -20V)
File Size	157.44K / 7 Page	View it Online	Download Datasheet

				Kersemi Electronic Co., Ltd...
Part No.	IRF1404
OCR Text	...e. (see fig. 11) ? i sd 95a, di/dt 150a/s, v dd v (br)dss , t j 175c notes: ? starting t j = 25c, l = 0.12mh r g = 25 w , i as = 95a. (see figure 12) ? pulse width 300s; duty cycle 2%. s d g parameter min....
Description	Advanced Process Technology Ultra Low On-Resistance
File Size	2,988.25K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	F4-50R12MS4
OCR Text	...0 v, l s = 30 nh v ge = 15 v, di/dt = 1400 a/s r gon = 13 w e on 3,30 6,00 mj mj t vj = 25c t vj = 125c abschaltverlustenergiepropuls turn-offenergylossperpulse i c = 50 a, v ce = 600 v, l s = 30 nh v ge = 15 v, du/d...
Description	Technische Information / Technical Information
File Size	561.39K / 9 Page	View it Online	Download Datasheet

				Dynex Semiconductor
Part No.	diM250PHM33-TL000 diM250PHM33-TL000-15
OCR Text	...e (max) = v ces C l * x di/dt iec 60747 - 9 950 a note: ? measured at the auxiliary terminals * l is the circuit inductance + l m dim250phm33 - tl000 4 /8 caution: this...
Description	Half Bridge IGBT Module
File Size	306.82K / 8 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductor...
Part No.	AO4886
OCR Text	... reverse recovery time i f =3a, di/dt=500a/ m s body diode reverse recovery charge i f =3a, di/dt=500a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =50v, r l =16.7 w , r gen =3 w turn-off fall time a. the value of r q ja is mea...
Description	100V Dual N-Channel MOSFET
File Size	547.76K / 6 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	IRFP240 IRFP240PBF SIHFP240 SIHFP240-E3
OCR Text	... A (see fig. 12). c. ISD 18 A, di/dt 150 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91210 S-Pending-Rev. A, 24-Jun-08 WORK-IN-PROGRESS ww...
Description	Power MOSFET
File Size	1,600.18K / 8 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	IRFP244 IRFP244PBF SIHFP244-E3 SIHFP244
OCR Text	... A (see fig. 12). c. ISD 15 A, di/dt 150 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91211 S-Pending-Rev. A, 24-Jun-08 www.vishay.com 1 WORK-...
Description	Power MOSFET
File Size	853.15K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFP26N60LPBF
OCR Text	...5C, I = 26A, V = 0V f T = 125C, di/dt = 100A/s f TJ = 125C, di/dt = 100A/s S GS TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com 1 2/12/04 IRFP26N60LPbF Static @ TJ = 25C (unless o...
Description	HEXFET Power MOSFET ( VDSS = 600V , RDS(on)typ. = 210mΩ , Trr typ. = 170ns , ID = 26A ) HEXFET Power MOSFET ( VDSS = 600V , RDS(on)typ. = 210mヘ , Trr typ. = 170ns , ID = 26A )
File Size	200.75K / 9 Page	View it Online	Download Datasheet

For di dt Found Datasheets File :: 40682 Search Time::1.484ms
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