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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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Part No. |
K6F1616T6C-FF55 K6F1616T6C K6F1616T6C-F K6F1616T6C-FF70
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OCR Text |
...cle time=1s, 100%duty, IIO=0mA, cs10.2V, LB0.2V or/and UB0.2V, CS2Vcc-0.2V, VIN0.2V or VINVCC-0.2V Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH, LB=VIL or/and UB=VIL, VIN=VIL or VIH IOL = 2.1mA IOH = -1.0mA Other input =0~Vcc 1) CS1... |
Description |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 100万x16位超低功耗和低电压的CMOS静态RAM
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File Size |
172.36K /
9 Page |
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it Online |
Download Datasheet
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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Part No. |
K6F2008S2E-F K6F2008S2E
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OCR Text |
...le time=1s, 100% duty, IIO=0mA, cs10.2V, CS2VCC-0.2V, VIN0.2V or VINVCC-0.2V 85ns 70ns Test Conditions Min -1 -1 2.0 Typ 1) 0.5 Max 1 1 2 12 15 0.4 5 Unit A A mA mA mA V V A
1. Typical value are measured at VCC=2.5V, TA=25C, and not 100%... |
Description |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
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File Size |
129.58K /
9 Page |
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it Online |
Download Datasheet
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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Part No. |
K6F2008U2E-YF70 DS_K6F2008U2E K6F2008U2E-EF55 K6F2008U2E-EF70 K6F2008U2E-YF55 K6F2008U2E-EF550 DSK6F2008U2E
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OCR Text |
...le time=1s, 100% duty, IIO=0mA, cs10.2V, CS2VCC-0.2V, VIN0.2V or VINVCC-0.2V 70ns 55ns Test Conditions Min -1 -1 2.4 Typ1) 0.5 Max 1 1 2 15 20 0.4 10 Unit A A mA mA mA V V A
1. Typical value are measured at VCC=3.0V, TA=25C, and not 100%... |
Description |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 256Kx8位超低功耗和低电压的CMOS静态RAM 256K X 8 STANDARD SRAM, 55 ns, PBGA36
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File Size |
173.65K /
10 Page |
View
it Online |
Download Datasheet
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Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronic
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Part No. |
K6F8016U6D-XF70 K6F8016U6D K6F8016U6D-FF55 K6F8016U6D-FF70 K6F8016U6D-XF55
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OCR Text |
...cle time=1s, 100%duty, IIO=0mA, cs10.2V, LB0.2V or/and UB0.2V, CS2Vcc-0.2V, VIN0.2V or VINVCC-0.2V Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH, LB=VIL or/and UB=VIL, VIN=VIL or VIH IOL = 2.1mA IOH = -1.0mA Other input =0~Vcc 1) CS1... |
Description |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 12k x16位超低功耗和低电压的CMOS静态RAM
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File Size |
150.89K /
9 Page |
View
it Online |
Download Datasheet
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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Part No. |
K6F1616U6M K6F1616U6M-F K6F1616U6MFAMILY
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OCR Text |
...cle time=1s, 100%duty, IIO=0mA, cs10.2V, LB0.2V or/and UB0.2V, CS2Vcc-0.2V, VIN0.2V or VINVCC-0.2V Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH, LB=VIL or/and UB=VIL, VIN=VIL or VIH IOL = 2.1mA IOH = -1.0mA Other input =0~Vcc 1) CS1... |
Description |
1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
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File Size |
175.05K /
9 Page |
View
it Online |
Download Datasheet
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SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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Part No. |
K6F8016T6C K6F8016T6C-FF55 K6F8016T6C-FF70
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OCR Text |
...cle time=1s, 100%duty, IIO=0mA, cs10.2V, LB0.2V or/and UB0.2V, CS2Vcc-0.2V, VIN0.2V or VINVCC-0.2V Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH, LB=VIL or/and UB=VIL, VIN=VIL or VIH IOL = 2.1mA IOH = -1.0mA Other input =0~Vcc 1) CS1... |
Description |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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File Size |
171.87K /
9 Page |
View
it Online |
Download Datasheet
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Samsung semiconductor Samsung Electronic
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Part No. |
K6F1616U6CNBSP K6F1616U6C
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OCR Text |
...cle time=1s, 100%duty, IIO=0mA, cs10.2V, LB0.2V or/and UB0.2V, CS2Vcc-0.2V, VIN0.2V or VINVCC-0.2V Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH, LB=VIL or/and UB=VIL, VIN=VIL or VIH IOL = 2.1mA IOH = -1.0mA Other input =0~Vcc 1) CS1... |
Description |
16Mb(1M x 16 bit) Low Power SRAM
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File Size |
152.91K /
10 Page |
View
it Online |
Download Datasheet
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Price and Availability
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