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ce1 Datasheet PDF File

For ce1 Found Datasheets File :: 2553 Search Time::6.219ms
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				SHARP[Sharp Electrionic Components]
Part No.	LRS1331
OCR Text	... A6 A0 A3 A2 A1 S-ce1 NC NC NC F-CE F-GND F-OE NOTE: All F-GND and S-GND pins are connected on the board. Two NC pins at the corner are connected. LRS1331-1 Figure 1. LRS1331 Pin Configuration Data Sheet 1 ...
Description	Stacked Chip 16M Flash Memory and 4M SRAM
File Size	213.86K / 26 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. Motorola, Inc MOTOROLA[Motorola Inc] ONSEMI[ON Semiconductor]
Part No.	MC10E131 MC10E131FN MC100E131FN ON0617 MC100E131
OCR Text	...27 28 1 2 3 4 5 CE0 6 R0 7 D1 8 ce1 9 R1 10 NC 11 VCCO D2 24 CE2 23 R2 22 VCCO 21 Q3 20 Q3 19 18 17 16 15 14 13 12 Q2 Q2 VCC Q1 Q1 Q0 Q0 S03 S12 CC R1 ce1 D1 Function Data Inputs Clock Enables (Individual) Resets Common Clock Sets (paired) ...
Description	4-BIT D FLIP-FLOP 100E SERIES, DUAL POSITIVE EDGE TRIGGERED D FLIP-FLOP, COMPLEMENTARY OUTPUT, PQCC28 From old datasheet system
File Size	104.79K / 4 Page	View it Online	Download Datasheet

				MICREL[Micrel Semiconductor]
Part No.	SY10E131 SY10E131JC SY10E131JCTR SY10E131JI SY10E131JITR SY100E131J SY100E131 SY100E131JC SY100E131JCTR SY100E131JI SY100E131JITR
OCR Text	... 14 13 12 D1 R0 CE0 ce1 R1 VCCO NC Rev.: E Amendment: /0 1 Issue Date: November, 1998 Micrel SY10E131 SY100E131 BLOCK DIAGRAM S TRUTH TABLE Pin State L L Mode Individual clocking with CEn Commo...
Description	4-BIT D FLIP-FLOP
File Size	73.50K / 4 Page	View it Online	Download Datasheet

				Dallas Semiconducotr
Part No.	DS80C400
OCR Text	...E0 Program Memory Chip Enable 0 ce1 Program Memory Chip Enable 1 CE 2 Program Memory Chip Enable 2 48 47 46 45 44 43 42 41 P5.0-P5.7 P4.0 P4.1 P4.2 P4.3 CE3 Program Memory Chip Enable 3 P4.4 A16 Program/Data Memory Address 16 P4.5 ...
Description	DS80C390-QCR DS80C390-FCR DS80C390-QNR DS80C390-FNR
File Size	202.25K / 10 Page	View it Online	Download Datasheet

				IDT[Integrated Device Technology] Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
Part No.	IDT7027 IDT7027L IDT7027L20G IDT7027L20GB IDT7027L20GI IDT7027L20PF IDT7027L20PFB IDT7027L20PFI IDT7027L25G IDT7027L25GB IDT7027L25GI IDT7027L25PF IDT7027L25PFB IDT7027L25PFI IDT7027L35G IDT7027L35GB IDT7027L35GI IDT7027L35PF IDT7027L35PFB IDT7027L35PFI IDT7027L55G IDT7027L55GB IDT7027L55GI IDT7027L55PF IDT7027L55PFB IDT7027L55PFI IDT7027S IDT7027S20G IDT7027S20GB IDT7027S20GI IDT7027S20PF IDT7027S20PFB IDT7027S20PFI IDT7027S25G IDT7027S25GB IDT7027S25GI IDT7027S25PF IDT7027S25PFB IDT7027S25PFI IDT7027S35G IDT7027S35GB IDT7027S35GI IDT7027S35PF IDT7027S35PFB IDT7027S35PFI IDT7027S55G IDT7027S55GB IDT7027S55GI IDT7027S55PF IDT7027S55PFB IDT7027S55PFI IDT7027S_L IDT7027L20PF8 IDT7027L20PFI8 IDT7027L25PF8 IDT7027L15PF IDT7027L15PF8
OCR Text	...ed by the chip enables (CE0 and ce1) permits the on-chip circuitry of each port to enter a very low standby power mode. Fabricated using IDT's CMOS high-performance technology, these devices typically operate on only 750mW of power. The IDT...
Description	32K x 16 Dual-Port RAM 60V N-Channel PowerTrench MOSFET 32K X 16 DUAL-PORT SRAM, 25 ns, CPGA108 HIGH-SPEED 32K x 16 DUAL-PORT STATIC RAM 32K X 16 DUAL-PORT SRAM, 25 ns, CPGA108 HIGH-SPEED 32K x 16 DUAL-PORT STATIC RAM 高2K的16 DUAL-PORT静态RAM HIGH-SPEED 32K x 16 DUAL-PORT STATIC RAM 32K X 16 DUAL-PORT SRAM, 20 ns, CPGA108 Dual P-Channel 2.5V Specified PowerTrench MOSFET 高2K的16 DUAL-PORT静态RAM
File Size	158.30K / 19 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9W4G08U1M K9K2G16U0M K9W4G16U1M K9K2G08Q0M K9K2G08U0M K9K2G16Q0M K9K2G08Q0M-P
OCR Text	....C N.C N.C N.C N.C R/B2 R/B1 RE ce1 CE2 N.C Vcc Vss N.C N.C CLE ALE WE WP N.C N.C N.C N.C N.C X8 N.C N.C N.C N.C N.C R/B2 R/B1 RE ce1 CE2 N.C Vcc Vss N.C N.C CLE ALE WE WP N.C N.C N.C N.C N.C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18...
Description	256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
File Size	637.45K / 40 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9W8G08U1M K9K4G16U0M K9K4G08U0M K9K4G08Q0M K9K4G16Q0M
OCR Text	....C N.C N.C N.C N.C R/B2 R/B1 RE ce1 CE2 N.C Vcc Vss N.C N.C CLE ALE WE WP N.C N.C N.C N.C N.C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 N.C N.C N.C...
Description	512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
File Size	597.69K / 38 Page	View it Online	Download Datasheet

				Brilliance Semiconducto... BSI[Brilliance Semiconductor]
Part No.	BS62LV2001TI BS62LV2001 BS62LV2001DC BS62LV2001DI BS62LV2001SI BS62LV2001STC BS62LV2001STI BS62LV2001TC BS62LV2001SC BS62LV2001SI-10 BS62LV2001TC-70 BS62LV2001TC-10
OCR Text	...1.5V * Easy expansion with CE2, ce1, and OE options * All I/O pins are 3V/5V tolerant The BS62LV2001 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 8 bits and operates in a wide range...
Description	Very Low Power/Voltage CMOS SRAM 256K X 8 bit Very low power/voltage CMOS SRAM 256K X 8 bit, 70ns Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns
File Size	281.17K / 10 Page	View it Online	Download Datasheet

				BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
Part No.	BS62LV2003TI BS62LV2003 BS62LV2003SC BS62LV2003SI BS62LV2003STC BS62LV2003STI BS62LV2003TC
OCR Text	...1.5V * Easy expansion with CE2, ce1, and OE options The BS62LV2003 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 8 bits and operates from a wide range of 2.4V to 3.6V supply voltage....
Description	Very Low Power/Voltage CMOS SRAM 256K X 8 bit
File Size	276.59K / 10 Page	View it Online	Download Datasheet

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