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NXP Semiconductors N.V.
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Part No. |
BLF7G27LS-100 BLF7G27L-100
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OCR Text |
...g conditions: v ds =28v; i dq =900ma; p l = 100 w (cw); f = 2500 mhz. table 6. characteristics t j = 25 ? c unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =... |
Description |
Power LDMOS transistor 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
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File Size |
144.04K /
14 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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Part No. |
BLF7G24LS-100 BLF7G24L-100
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OCR Text |
...g conditions: v ds =28v; i dq =900ma; p l = 100 w (cw); f = 2300 mhz. table 6. characteristics t j = 25 ? c unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =... |
Description |
Power LDMOS transistor
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File Size |
117.71K /
14 Page |
View
it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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Part No. |
BLS7G2325L-105 BLS7G2325L-105-15
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OCR Text |
...g conditions: v ds =28v; i dq =900ma; p l = 100 w (cw); f = 2300 mhz. table 6. characteristics t j = 25 ? c unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =... |
Description |
Power LDMOS transistor BLS7G2325L-105<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; Power LDMOS transistor
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File Size |
273.08K /
9 Page |
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it Online |
Download Datasheet |
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Price and Availability
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