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ADPOW[Advanced Power Technology]
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Part No. |
APT8011JLL_04 APT8011JLL APT8011JLL04
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OCR Text |
800v 51A 0.110
POWER MOS 7
(R)
R
MOSFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enh...4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C... |
Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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File Size |
108.41K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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Part No. |
APT8018L2VFR
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OCR Text |
800v 43A
0.180
POWER MOS V(R) FREDFET
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Thi...4 1
Continuous Drain Current @ TC = 25C Pulsed Drain Current
Gate-Source Voltage Continuous Ga... |
Description |
MOSFET POWER MOS V FREDFET
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File Size |
131.88K /
4 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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Part No. |
APT8018L2VR_06 APT8018L2VR APT8018L2VR06
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OCR Text |
800v 43A
0.180
POWER MOS V(R) MOSFET
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This...4 1
Continuous Drain Current @ TC = 25C Pulsed Drain Current
Gate-Source Voltage Continuous Ga... |
Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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File Size |
151.44K /
4 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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Part No. |
APT8020JFLL
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OCR Text |
800v
33A 0.220
S G D S
POWER MOS 7
(R)
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhanc...4.16 -55 to 150 300 33 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total P... |
Description |
40 A, 800 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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File Size |
256.97K /
5 Page |
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it Online |
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MICROSEMI POWER PRODUCTS GROUP Microsemi, Corp. ADPOW[Advanced Power Technology]
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Part No. |
APT75DQ120SG APT75DQ120B APT75DQ120S APT75DQ120BG
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OCR Text |
...F = 75A, diF/dt = -1000A/s VR = 800v, TC = 125C IF = 75A, diF/dt = -200A/s VR = 800v, TC = 125C IF = 75A, diF/dt = -200A/s VR = 800v, TC = 2...4
Note:
D = 0.9
PDM
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC... |
Description |
Fast Recovery Epitaxial Diode; Package: TO-247 [B]; IO (A): 75; VR (V): 1200; trr (nsec): 32; VF (V): 2.8; Qrr (nC): 3340; 75 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
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File Size |
128.50K /
4 Page |
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it Online |
Download Datasheet
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Price and Availability
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