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  752.045 Datasheet PDF File

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    APT30D30S

Advanced Power Technology
Part No. APT30D30S
OCR Text ...5) 3 18.70 (.736) 19.10 (.752) Revised 2/24/95 12.40 (.488) 12.70 (.500) 0.40 (.016) 0.65 (.026) 0.020 (.001) 0.250 (.010) 2.70 (.106) 2.90 (.114) 1.20 (.047) 1.40 (.055) 1.15 (.045) 1.45 (.057) 1.90 (.075) 2.10 (.083) 5.4...
Description
File Size 30.43K  /  2 Page

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    APT
Part No. APT60S20B APT60S20S
OCR Text ....05(.632) 18.70 (.736) 19.10 (.752) 1.15 (.045) 1.45 (.057) 5.45 (.215) bsc (2 plcs.) 4.90 (.193) 5.10 (.201) 1.45 (.057) 1.60 (.063) 2.70 (.106) 2.90 (.114) 0.40 (.016) 0.65 (.026) dimensions in millimeters (inches) heat sink (cathode) an...
Description HIGH VOLTAGE SCHOTTKY DIODE

File Size 191.40K  /  4 Page

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    APT30D60S

Advanced Power Technology
Part No. APT30D60S
OCR Text ... (.045) 18.70 (.736) 19.10 (.752) Revised 2/24/95 12.40 (.488) 12.70 (.500) 0.40 (.016) 0.65 (.026) 0.020 (.001) 0.250 (.010) 2.70 (.106) 2.90 (.114) 1.20 (.047) 1.40 (.055) 1.15 (.045) 1.45 (.057) 1.90 (.075) 2.10 (.083) 5.4...
Description ULTRAFAST SOFT RECOVERY RECTIFIER DIODE 600V 30A

File Size 58.92K  /  4 Page

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    MICROSEMI
Part No. APT60S20BG APT60S20SG
OCR Text ....05(.632) 18.70 (.736) 19.10 (.752) 1.15 (.045) 1.45 (.057) 5.45 (.215) bsc (2 plcs.) 4.90 (.193) 5.10 (.201) 1.45 (.057) 1.60 (.063) 2.70 (.106) 2.90 (.114) 0.40 (.016) 0.65 (.026) dimensions in millimeters (inches) heat sink (cathode) an...
Description HIGH VOLTAGE SCHOTTKY DIODE

File Size 1,589.58K  /  4 Page

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    IXFH12N50F IXFT12N50F

IXYS, Corp.
IXYS[IXYS Corporation]
Part No. IXFH12N50F IXFT12N50F
OCR Text ...4 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. pate...
Description HiPerRF Power MOSFETs F-Class: MegaHertz Switching 12 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA

File Size 300.62K  /  2 Page

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    NEC Corp.
NEC[NEC]
Part No. NES1821B-30
OCR Text ...0.786 0.779 0.774 0.766 0.758 0.752 0.744 0.736 0.728 0.720 0.710 0.698 0.688 0.675 0.662 0.646 0.631 0.614 0.593 0.571 0.546 0.519 0.488 0....045 0.049 0.052 0.055 0.057 0.059 0.060 0.062 0.065 0.068 0.073 0.080 0.086 0.093 0.098 0.104 0.109 ...
Description 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

File Size 44.61K  /  8 Page

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    IXYS[IXYS Corporation]
Part No. IXGT16N170AH1 IXGH16N170AH1 IXGH16N170A IXGT16N170A
OCR Text ...4 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Pulse test, t 300 s, duty cycle 2 % Switching time...
Description    High Voltage IGBT

File Size 520.99K  /  2 Page

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    IXGT16N170 IXGH16N170

IXYS Corporation
Part No. IXGT16N170 IXGH16N170
OCR Text ...4 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. pate...
Description High Voltage IGBT

File Size 96.80K  /  2 Page

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