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Samsung
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Part No. |
KM416S4030B
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OCR Text |
...DQ) are changed. IIL(Inputs) : 5ua to 1uA, IIL(DQ) : 5ua to 1.5ua. - The measuring condition of tR/tF is clearly defined each as 0pF +50 to VSS/VDD, 50pF +50 to VSS/VDD - Cin to be measured at VDD = 3.3V, TA = 23C, f = 1MHz, VREF =1.4V ... |
Description |
CMOS SDRAM From old datasheet system
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File Size |
124.18K /
11 Page |
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Samsung Semiconductor Co., Ltd.
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Part No. |
KMM366S823BTL
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OCR Text |
... leakage currents (inputs) : 5ua to 1ua. - input leakage currents (i/o) : 5ua to 1.5ua. - cin to be measured at v dd = 3.3v, t a = 23 c , f = 1mhz, v ref = 1.4v 200mv. - ac operating condition is changed as de... |
Description |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存(8Mx64动态内存模块)
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File Size |
143.39K /
13 Page |
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Samsung Semiconductor Co., Ltd.
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Part No. |
KMM366S823BT
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OCR Text |
...hanged. i il (inputs) : 5ua to 1ua, i il (dq) : 5ua to 1.5ua. - cin to be measured at v dd = 3.3v, t a = 23 c, f = 1mhz, v ref =1.4v 200 mv. revision .1 (march 1998) ? some parameter values & characteristics ... |
Description |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存(8Mx64动态内存模块)
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File Size |
153.21K /
13 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
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Part No. |
KMM366S824BT
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OCR Text |
...hanged. i il (inputs) : 5ua to 1ua, i il (dq) : 5ua to 1.5ua. - cin to be measured at v dd = 3.3v, t a = 23 c, f = 1mhz, v ref =1.4v 200 mv. revision .1 (march 1998) ? some parameter values & characteristics of... |
Description |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存(8Mx64动态内存模块)
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File Size |
152.83K /
13 Page |
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it Online |
Download Datasheet
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Samsung Semiconductor Co., Ltd.
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Part No. |
KMM366S803BTL
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OCR Text |
... leakage currents (inputs) : 5ua to 1ua. - input leakage currents (i/o) : 5ua to 1.5ua. - cin to be measured at v dd = 3.3v, t a = 23 c , f = 1mhz, v ref = 1.4v 200mv. - ac operating condition is changed as de... |
Description |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存(8Mx64动态内存模块)
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File Size |
142.45K /
13 Page |
View
it Online |
Download Datasheet
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