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				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	74F259 N74F259D N74F259N 74F259_2
OCR Text	...ONFIGURATION A0 1 A1 2 A2 3 Q0 4 Q1 5 Q2 6 Q3 7 GND 8 16 V CC 15 MR 14 E 13 D 12 Q7 11 Q6 10 Q5 9 Q4 SF00823 TYPE TYPICAL PROPAGAT...7R SF00824 SF00825 FUNCTION TABLE INPUTS MR L L L L * * * L H H H H * * * H L X d q H = = ...
Description	From old datasheet system Latch
File Size	95.68K / 12 Page	View it Online	Download Datasheet

				AMD[Advanced Micro Devices]
Part No.	AM29SL800DB100 AM29SL800DT90 AM29SL800D AM29SL800DB-100EC AM29SL800DB-100EI AM29SL800DB-100FC AM29SL800DB-100FI AM29SL800DB-100WAC AM29SL800DB-100WAI AM29SL800DB-100WCC AM29SL800DB-100WCI AM29SL800DB120 AM29SL800DB150 AM29SL800DB90 AM29SL800DT100 AM29SL800DT-100EC AM29SL800DT-100EI AM29SL800DT-100FC AM29SL800DT-100FI AM29SL800DT-100WAC AM29SL800DT-100WAI AM29SL800DT-100WCC AM29SL800DT-100WCI AM29SL800DT120 AM29SL800DT150
OCR Text	...(byte mode) -- One 8 Kword, two 4 Kword, one 16 Kword, and fifteen 32 Kword sectors (word mode) -- Supports full chip erase -- Sector Protection features: A hardware method of locking a sector to prevent any program or erase operations with...
Description	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
File Size	853.12K / 46 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K7Q161852A
OCR Text	...ocument. 1. Amendment 1) Page 3,4 PIN NAME DESCRIPTION W (4A) : from Read Control Pin to Write Control R (8A) : from Write Control Pin to Re...7R-9R 10P,11N,11M,10K,11J,11G,10E,11D,11C,3B,3C,2D, 3F,2G,3J,3L,3M,2N 11P,10M,11L,11K,10J,11F,11E,10...
Description	512Kx36 & 1Mx18 QDRTM b2 SRAM
File Size	356.76K / 17 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K7Q161854A K7Q161854A-FC10 K7Q161854A-FC13
OCR Text	...ocument. 1. Amendment 1) Page 3,4 PIN NAME DESCRIPTION W (4A) : from Read Control Pin to Write Control R (8A) : from Write Control Pin to Re...7R-9R 10P,11N,11M,10K,11J,11G,10E,11D,11C,3B,3C,2D, 3F,2G,3J,3L,3M,2N 11P,10M,11L,11K,10J,11F,11E,10...
Description	512Kx36-bit, 1Mx18-bit QDR SRAM
File Size	359.88K / 17 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K7R161882B K7R163682B K7R160982B
OCR Text	...dvance Preliminary 0.2 0.3 0.4 Dec. 26, 2002 Jan. 27, 2003 Mar. 20, 2003 Preliminary Preliminary Preliminary 0.5 April. 4, 20...7R-9R 10P,11N,11M,10K,11J,11G,10E,11D,11C,10N,9M,9L 9J,10G,9F,10D,9C,9B,3B,3C,2D,3F,2G,3J,3L,3M,2N 1...
Description	512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM 512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM 512Kx36
File Size	425.70K / 19 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K7R161884B K7R161884B-FC16 K7R161884B-FC20 K7R161884B-FC25 K7R161884B-FC30 K7R163684B K7R163684B-FC16 K7R163684B-FC20 K7R163684B-FC25 K7R163684B-FC30 K7R320982M
OCR Text	...dvance Preliminary 0.2 0.3 0.4 Dec. 26, 2002 Jan. 27, 2003 Mar. 20, 2003 Preliminary Preliminary Preliminary 0.5 April. 4, 20...7R-9R 10P,11N,11M,10K,11J,11G,10E,11D,11C,10N,9M,9L 9J,10G,9F,10D,9C,9B,3B,3C,2D,3F,2G,3J,3L,3M,2N 1...
Description	512Kx36 & 1Mx18 QDR II b4 SRAM 512Kx36 512Kx36 & 1Mx18 QDR II b4 SRAM 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
File Size	415.94K / 18 Page	View it Online	Download Datasheet

				http:// POWER-ONE[Power-One] B ?B　Battery Co., Ltd. Superior Electric Electronic Theatre Controls, Inc. Central Semiconductor, Corp. Cypress Semiconductor Corp. Analog Devices, Inc. Sumida, Corp.
Part No.	DP2101 DP2101-7R EP2001-7R CP1001-7R CP2101-7R GP2101-7R EP3040-7R DP3040-7R BP3040-7R CP3040-7R GP3040-7R EP2101-7R BP2101-7R GP4660-7R GP1001-7R CP1101-7R BP1001-7R BP1101-7R BP2001-7R BP2320-7R BP2540-7R BP2660-7R BP3020-7R BP4660-7R CP2001-7R CP2320-7R CP2540-7R DP1001-7R DP1101-7R DP2001 DP2001-7R DP2110 DP2210 DP2320 DP2320-7R DP2540 DP2540-7R DP2610 DP2660 DP2660-7R DP3020-7R DP4660-7R EP1001-7R EP1101-7R EP2320-7R EP2540-7R EP2660-7R EP3020-7R EP4660-7R GP1101-7R GP2001-7R GP2320-7R GP2540-7R GP2660-7R GP3020-7R CP660-7R CP3020-7R
OCR Text	4 isolated outputs 3.3...96 V DC 4242V DC I/O electric strength test voltage LGA * Extremely slim case (4 TE), fully enclosed * Extremel...7R CP 1101-7R BP 1001-7R CP 1001-7R BP 2101-7R CP 2101-7R BP 2001-7R CP 2001-7R BP 2320-7R CP 2320-7...
Description	120...195 Watt DC-DC Converters (DP2xxx) 120...195 Watt DC-DC Converters 120...195 Watt DC-DC Converters 120 ... 195瓦的DC - DC转换 Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 47uF; Voltage: 50V; Case Size: 6.3x9 mm; Packaging: Bulk 120 ... 195瓦的DC - DC转换 Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 470uF; Voltage: 10V; Case Size: 8x9 mm; Packaging: Bulk 120 ... 195瓦的DC - DC转换 Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 220uF; Voltage: 50V; Case Size: 10x9 mm; Packaging: Bulk
File Size	70.92K / 5 Page	View it Online	Download Datasheet

				Galvantech
Part No.	GVT71256D18 71256D18
OCR Text	...ast access times: 3.5, 3.8, and 4.0ns Fast clock speed: 166, 150, 133, and 117MHz Provide high performance 3-1-1-1 access rate Fast OE# acce...7R, 1T, 4T, 2U, 3U, 4U, 5U, 6U 1-3, 6, 7, 14, 16, 25, 28-30, 38, 39, 42, 43, 51-53, 56, 57, 66, 7...
Description	256K X 18 SYNCHRONOUS BURST SRAM From old datasheet system
File Size	173.28K / 14 Page	View it Online	Download Datasheet

				Galvantech
Part No.	GVT71256DA18 GVT71128DA36 DA3618
OCR Text	... OPTIONS * Clock Cycle Timing 4.0ns (250MHz) 4.4ns (225MHz) 5.0ns (200MHz) 6.0ns (166MHz) Configurations 128K x 36 256K x 18 Packages 119-...7R, 1T, 2T, 6T, 6U August 12, 1998 4 Galvantech, Inc. reserves the right to change products...
Description	128K X 36/256K X 18 SYNCHRONOUS SRAM From old datasheet system
File Size	246.90K / 24 Page	View it Online	Download Datasheet

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