Part Number Hot Search : 
A042M U2793B UPR10 TB2903HQ 164ASC ST7805R BFR65 1SMA4740
Product Description
Full Text Search
  4-20v Datasheet PDF File

For 4-20v Found Datasheets File :: 48562    Search Time::2.828ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    FS7KM-18A FS7KM-18

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS7KM-18A FS7KM-18
OCR Text ....15 2.54 0.25 2.54 0.25 4.5 0.2 q GATE w DRAIN e SOURCE 123 2.6 0.2 w VDSS .................................................20V TC = 25C Pulse Test VGS = 20V 10V 5V 4.5V DRAIN CURRENT ID (A) 16 PD = 40W DR...
Description HIGH-SPEED SWITCHING USE

File Size 41.74K  /  4 Page

View it Online

Download Datasheet





    FS7KM-18 FS7M0680TU FS7M0680YDTU FS7KM-18A

POWEREX[Powerex Power Semiconductors]
Fairchild Semiconductor
Part No. FS7KM-18 FS7M0680TU FS7M0680YDTU FS7KM-18A
OCR Text ....15 2.54 0.25 2.54 0.25 4.5 0.2 q GATE w DRAIN e SOURCE 123 2.6 0.2 w VDSS .................................................20V TC = 25C Pulse Test VGS = 20V 10V 5V 4.5V DRAIN CURRENT ID (A) 16 PD = 40W DR...
Description Fairchild Power Switch(FPS)
Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 46.69K  /  4 Page

View it Online

Download Datasheet

    FS7KM-5

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS7KM-5
OCR Text ....15 2.54 0.25 2.54 0.25 4.5 0.2 q GATE w DRAIN e SOURCE 123 2.6 0.2 w VDSS .................................................20V 10V 7V PD = 30W TC = 25C Pulse Test CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) ...
Description HIGH-SPEED SWITCHING USE

File Size 44.05K  /  4 Page

View it Online

Download Datasheet

    GA100TS120U

IRF[International Rectifier]
Part No. GA100TS120U
OCR Text 4 IGBT technology * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Very low con...20V Dynamic Characteristics - TJ = 125C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 268.82K  /  10 Page

View it Online

Download Datasheet

    SSD45N03

SeCoS Halbleitertechnologie GmbH
Part No. SSD45N03
OCR Text ...Ratings 25 20 45 32 150 50 0.4 Unit V V A A A W W/ C o Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Ene...20V VDS=25V,VGS=0 VDS=20V,VGS=0 VGS=10V, ID=30A VGS=4.5V, ID=30A o 0.026 _ _ _ _ _ 1.0 _...
Description N-Channel Enhancement Mode Power Mos.FET

File Size 578.44K  /  4 Page

View it Online

Download Datasheet

    STM8601

SamHop Microelectronics...
SamHop Microelectronics Corp.
Part No. STM8601
OCR Text ... (P-Channel) VDSS -60V ID 4.5A RDS(ON) (m) Max 58 @ VGS=10V ID -3.3A RDS(ON) (m) Max 105 @ VGS=-10V 150 @ VGS=-4.5V 75 ...20V , VDS=0V ON CHARACTERISTICS VGS(th) RDS(ON) gFS Gate Threshold Voltage Drain-Source On-State ...
Description Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

File Size 255.18K  /  11 Page

View it Online

Download Datasheet

    SGM2301

SeCoS Halbleitertechnologie GmbH
Part No. SGM2301
OCR Text ...C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00...20V,RDS(ON) 130m[ P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 oC U...
Description P-Channel Enhancement Mode Power Mos.FET

File Size 329.15K  /  4 Page

View it Online

Download Datasheet

    TN5D01A

Sanyo Semicon Device
Part No. TN5D01A
OCR Text ...ditions Ratings 10 to 30 2.7 to 4.9 0 to 5 --10 to + 85 Unit V V A C Electrical Characteristics at Ta=25C, See Specified Test Circuit (VO...20V VIN=20V VIN=20V, VSS=0V Conditions VIN=20V, IOUT=3A VIN=20V, IOUT=3A ID=--1mA, VIN, GND, Vfb, VS...
Description Separately-Excited Step-Down Switching Regulator

File Size 486.40K  /  11 Page

View it Online

Download Datasheet

    Wuxi NCE Power Semicond...
Part No. NCE4525
OCR Text ...10v r ds(on) < 38m ? @ v gs =4.5v p-channel v ds = -40v,i d = -5a r ds(on) < 38m ? @ v gs =-10v r ds(on) <50m ? @ v gs =-4...20v,v gs =0v, f=1.0mhz - 43 - pf switching characteristics (note 4) turn-on delay time t ...
Description N and P-Channel Enhancement Mode Power MOSFET

File Size 520.93K  /  10 Page

View it Online

Download Datasheet

    TS8314

Taiwan Semiconductor Company, Ltd
Part No. TS8314
OCR Text ...0V RDS1(ON) equivalent = 15m at 4.5 Volts * 5.5A, 20V RDS1(ON) equivalent = 22m at 2.5 Volts * Low profile package: less than 0.8mm height when mounted on PCB. * Occupies less than 1/5 the area of TSSOP-8. * Excellent thermal characteristic...
Description Bi-directional N-Channel 2.5V Specified MicroSURF垄芒

File Size 1,846.36K  /  28 Page

View it Online

Download Datasheet

For 4-20v Found Datasheets File :: 48562    Search Time::2.828ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of 4-20v

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.511873960495